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Light-emitting diode with a thick transparent layer 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-033/00
출원번호 US-0819542 (1992-01-10)
발명자 / 주소
  • Fletcher Robert M. (San Jose CA) Huang Kuo-Hsin (Sunnyvale CA) Kuo Chihping (Milpitas CA) Yu Jiann (Palo Alto CA) Osentowski Timothy D. (San Jose CA)
출원인 / 주소
  • Hewlett-Packard Company (Palo Alto CA 02)
인용정보 피인용 횟수 : 147  인용 특허 : 0

초록 ▼

A light emitting diode (LED) including a light generation region situated on a light-absorbing substrate also includes a thick transparent layer which ensures that an increased amount of light is emitted from the sides of the LED and only a minimum amount of light is absorbed by the substrate. The t

대표청구항 ▼

A light emitting diode, positioned in a medium having a refractive index, h1, the light emitting diode having a width, A, and comprising: a light absorbing substrate; a light generation region overlaying the substrate; a top transparent layer overlaying the light generation region, the top transpare

이 특허를 인용한 특허 (147)

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