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Process for etching oxide films in a sealed photochemical reactor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B44C-001/22
  • C03C-015/00
  • C03C-025/06
출원번호 US-0876043 (1992-04-30)
발명자 / 주소
  • Grant Robert W. (Excelsior MN) Torek Kevin (State College PA) Novak Richard E. (Plymouth MN) Ruzyllo Jerzy (State College PA)
출원인 / 주소
  • SubMicron Systems, Inc. (Allentown PA 02)
인용정보 피인용 횟수 : 59  인용 특허 : 0

초록 ▼

A process for etching oxide films on the semiconductor, or other substrates, in a sealed photochemical reactor. Anhydrous hydrogen fluoride (AHF) gas, or other halogen containing gases, and alcohol vapor carried by an inert gas, such as nitrogen, are passed over the oxides to be etched. The UV radia

대표청구항 ▼

Process for etching at least one oxide film on the semiconductor or other substrates comprising the steps of: a. placing a substrate in a stand-alone chamber or chamber connected to a cluster tool; b. simultaneously or sequentially passing gaseous anhydrous hydrogen fluoride, or other halogen contai

이 특허를 인용한 특허 (59)

  1. Rose Peter H. ; Sferlazzo Piero ; van der Heide Robert G., Aerosol surface processing.
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  2. Rose Peter H. ; Sferlazzo Piero ; van der Heide Robert G., Aerosol surface processing.
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  3. Bergman Eric J. ; Hess Mignon P., Apparatus and method for processing the surface of a workpiece with ozone.
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  4. Bergman Eric J. ; Hess Mignon P., Apparatus and method for processing the surface of a workpiece with ozone.
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  5. Bergman, Eric J.; Hess, Mignon P., Apparatus and method for processing the surface of a workpiece with ozone.
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  6. Butterbaugh,Jeffery W.; Gray,David C.; Fayfield,Robert T.; Siefering,Kevin; Heitzinger,John; Hiatt,Fred C., Apparatus for surface conditioning.
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  7. Bergman, Eric J., Apparatus for treating a workpiece with steam and ozone.
    상세보기
  8. Willis, Stephen L., Chemical mechanical planarization of conductive material.
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  9. Willis,Stephen L., Chemical mechanical planarization of conductive material.
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  10. Butterbaugh Jeffery W. ; Gray David C., Cleaning method.
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  11. Butterbaugh Jeffery W. ; Gray David C. ; Fayfield Robert T., Cleaning method.
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  12. Grant, Robert W.; Ruzyllo, Jerzy; Torek, Kevin, Controlled etching of oxides via gas phase reactions.
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  13. Fayfield Robert T. ; Heitxinger John M., Direct vapor delivery of enabling chemical for enhanced HF etch process performance.
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  14. Fayfield Robert T. ; Heitzinger John M., Direct vapor delivery of enabling chemical for enhanced HF etch process performance.
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  15. Racanelli,Marco; Hu,Chun; Sherman,Phil N., Double-implant high performance varactor and method for manufacturing same.
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  16. Gonzales David B. ; Bartlett Aaron T., Endpoint stabilization for polishing process.
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  17. Gonzales, David B.; Bartlett, Aaron T., Endpoint stabilization for polishing process.
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  18. Fayfield, Robert T.; Schwab, Brent, Equipment for UV wafer heating and photochemistry.
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  19. Randhir Thakur ; James Pan, High selectivity etching process for oxides.
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  20. Thakur Randhir ; Pan James, High selectivity etching process for oxides.
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  21. Thakur Randhir ; Pan James, High selectivity etching process for oxides.
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  22. Lill, Thorsten; Berry, III, Ivan L.; Shen, Meihua; Schoepp, Alan M.; Hemker, David J., Isotropic atomic layer etch for silicon and germanium oxides.
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  23. Berry, III, Ivan L.; Park, Pilyeon; Yaqoob, Faisal, Isotropic atomic layer etch for silicon oxides using no activation.
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  24. Morgan Paul A. ; Torek Kevin, Method and apparatus for etch of a specific subarea of a semiconductor work object.
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  25. Butterbaugh Jeffery W. ; Gray David C. ; Fayfield Robert T. ; Siefering Kevin ; Heitzinger John ; Hiatt Fred C., Method and apparatus for surface conditioning.
    상세보기
  26. Bergman, Eric J.; Hess, Mignon P., Method for processing the surface of a workpiece.
    상세보기
  27. Bergman, Eric J.; Hess, Mignon P., Method for treating the surface of a workpiece.
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  28. Torek Kevin J., Method of etching thermally grown oxide substantially selectively relative to deposited oxide.
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  29. Torek Kevin J., Method of etching thermally grown oxide substantially selectively relative to deposited oxide.
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  30. Chen, Guoqing; Pan, James, Method of forming hemisphere grained silicon on a template on a semiconductor work object.
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  31. Torek,Kevin; Shea,Kevin; Graettinger,Thomas, Method of forming high aspect ratio structures.
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  32. Torek Kevin J., Method of making an oxide structure having a finely calibrated thickness.
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  33. Shim,Woo Gwan; Oh,Jung Min; Hong,Chang Ki; Choi,Sang Jun; Kim,Sang Yong, Method of manufacturing capacitor of semiconductor device.
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  34. Kageyama Mokuji,JPX ; Miyashita Moriya,JPX, Method of manufacturing semiconductor device and methods of processing, analyzing and manufacturing its substrate.
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  35. Gschwandtner, Alexander; Innertsberger, Gudrun; Grassl, Andreas; Froschle, Barbara; Kerber, Martin; Mattheus, Alexander, Method of producing a semiconductor surface covered with fluorine.
    상세보기
  36. Bergman, Eric J., Methods for cleaning semiconductor surfaces.
    상세보기
  37. Bergman, Eric J., Methods for cleaning semiconductor surfaces.
    상세보기
  38. Chen, Guoqing; Pan, James, Methods of forming hemispherical grained silicon on a template on a semiconductor work object.
    상세보기
  39. Chen, Guoqing; Pan, James, Methods of forming hemispherical grained silicon on a template on a semiconductor work object.
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  40. Chen,Guoqing; Pan,James, Methods of forming hemispherical grained silicon on a template on a semiconductor work object.
    상세보기
  41. Bergman,Eric J., Methods of thinning a silicon wafer using HF and ozone.
    상세보기
  42. Sugiura, Kazuhiko, Micro-structure manufacturing method.
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  43. Kevin J. Torek, Oxide structure having a finely calibrated thickness.
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  44. Elliott, David J.; Thompson, Allan R.; Whitten, George D.; Camp, Jonathan C.; Krajewski, Mark T., Photocatalytic reactor system for treating flue effluents.
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  45. Dolechek, Kert L.; Thompson, Raymon F., Process and apparatus for thinning a semiconductor workpiece.
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  46. Dolechek,Kert L.; Thompson,Raymon F., Process and apparatus for thinning a semiconductor workpiece.
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  47. Bergman, Eric J., Process and apparatus for treating a workpiece such as a semiconductor wafer.
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  48. Gebhart,Thomas Maximilia; Bergman,Eric J., Process and apparatus for treating a workpiece using ozone.
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  49. Bergman,Eric J., Process and apparatus for treating a workpiece with gases.
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  50. Butterbaugh Jeffery W. ; Gray David C., Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds.
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  51. Dolechek,Kert L.; Thompson,Raymon F., Process for thinning a semiconductor workpiece.
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  52. Eric J. Bergman, Process for treating a workpiece with hydrofluoric acid and ozone.
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  53. Rose Peter H. ; Sferlazzo Piero, Processing a surface.
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  54. Bergman,Eric J., Processing a workpiece using water, a base, and ozone.
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  55. Elliott,David J.; Harte,Kenneth J.; Shephard,Larry E., Scanning plasma reactor.
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  56. Dolechek,Kert L.; Thompson,Raymon F., Semiconductor workpiece.
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  57. Bergman,Eric J.; Gebhart,Thomas Maximilian, System and methods for polishing a wafer.
    상세보기
  58. Nuttall Michael ; Torek Kevin J. ; Chapek David L., Trench isolation method.
    상세보기
  59. Fayfield Robert T. ; Schwab Brent D., UV/halogen treatment for dry oxide etching.
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