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Method for determining planarization endpoint during chemical-mechanical polishing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/302
  • H01L-021/463
출원번호 US-0969871 (1992-10-29)
발명자 / 주소
  • Cote William J. (Poughquag NY)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 58  인용 특허 : 0

초록 ▼

A moat is preferably created in a region of an insulation layer on a wafer that will be destroyed when the wafer is cut. The integrated circuit includes a first metal pattern in an active region and a second metal pattern on the moat island. An insulating layer is conformally deposited and chemical-

대표청구항 ▼

A method for determining planarization endpoint in chemical-mechanical polishing during integrated circuit fabrication on a substrate, comprising the steps of: depositing a first layer of insulation on said substrate; forming a first metallization pattern on a first region of said first layer of ins

이 특허를 인용한 특허 (58)

  1. Paul C. Buschner ; Timothy G. Dunham ; Howard S. Landis, AB etch endpoint by ABFILL compensation.
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    상세보기
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  4. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
    상세보기
  5. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
    상세보기
  6. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
    상세보기
  7. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
    상세보기
  8. Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
    상세보기
  9. Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.
    상세보기
  10. Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Block for polishing a wafer during manufacture of integrated circuits.
    상세보기
  11. Zhou Hao, Buffer grated structure for metrology mark and method for making the same.
    상세보기
  12. Boggs Karl E. ; Lin Chenting ; Nuetzel Joachim F. ; Ploessl Robert ; Ronay Maria ; Schnabel Florian ; Stephens Jeremy K., CMP process using indicator areas to determine endpoint.
    상세보기
  13. Zhou Mei-Sheng,SGX ; Chooi Simon,SGX, Chemical mechanical polish (CMP) endpoint detection by colorimetry.
    상세보기
  14. Richard J. Lebel ; Rock Nadeau ; Martin P. O'Boyle ; Paul H. Smith, Jr. ; Theodore G. van Kessel ; Hemantha K. Wickramasinghe, Chemical mechanical polishing in-situ end point system.
    상세보기
  15. Chen Lai-Juh,TWX, Chemical-mechanical polishing planarization monitor.
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  16. Chen Hsi-Chieh (Chu-Tung TWX) Hsu Shun-Liang (Hsin-Chu TWX), Chemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperature.
    상세보기
  17. Jain Manoj Kumar (Plano TX) Chisholm Michael Francis (Plano TX), Conductor reticulation for improved device planarity.
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  18. Manoj Kumar Jain ; Michael Francis Chisholm, Conductor reticulation for improved device planarity.
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  19. Baker Faye Diann ; Brooks Daniel Shaw ; Leidy Robert Kenneth ; McGuire Anne Elizabeth ; Nadeau Rock, Dishing and erosion monitor structure for damascene metal processing.
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  20. Tao Hun-Jan,TWX ; Tsai Chia-Shiung,TWX, Dry etching endpoint procedure to protect against photolithographic misalignments.
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  21. Jain, Manoj Kumar; Chisholm, Michael Francis, Enhancement in throughput and planarity during CMP using a dielectric stack containing an HDP oxide.
    상세보기
  22. Chen, Chii-Ping; Chien, Wen-Chen; Tsai, Ching-Ming, Feed forward process control method for adjusting metal line Rs.
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  23. Ngo Minh Van ; Cheung Robin W., High density capping layers with improved adhesion to copper interconnects.
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  24. Kilcoyne, Sean P.; Emerson, Robert M.; Liguori, Michael V., In-situ calibration structures and methods of use in semiconductor processing.
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  25. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
    상세보기
  26. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
    상세보기
  27. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
    상세보기
  28. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
    상세보기
  29. Huang,Picheng; Anderson,Paul E.; Stearns,Laura C.; Xue,Song S., Magnetic devices having magnetic features with CMP stop layers.
    상세보기
  30. Dow Daniel B., Method and apparatus for electrically endpointing a chemical-mechanical planarization process.
    상세보기
  31. Dow Daniel B., Method and apparatus for electrically endpointing a chemical-mechanical planarization process.
    상세보기
  32. Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
    상세보기
  33. Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
    상세보기
  34. Leach Michael A., Method and structure for polishing a wafer during manufacture of integrated circuits.
    상세보기
  35. Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Method and structure for polishing a wafer during manufacture of integrated circuits.
    상세보기
  36. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
    상세보기
  37. Miyano Takaya,JPX ; Miura Kiyoshi,JPX ; Hasegawa Kazuto,JPX ; Shirai Yasuo,JPX, Method of detecting end point of process, end point detector, computer memory product and chemical mechanical polishing apparatus.
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  38. Sakai Yuichi,JPX ; Chibahara Hiroyuki,JPX ; Iwasaki Masanobu,JPX ; Suda Kakutaro,JPX, Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured thereby.
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  39. Sakai, Yuichi; Chibahara, Hiroyuki; Iwasaki, Masanobu; Suda, Kakutaro, Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured thereby.
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  40. Fry Howard Wallace (Scotts Valley CA) Lightfoot Kurt James (Ben Lomond CA), Method of planarizing a layer of material.
    상세보기
  41. Dawson Robert ; Fulford ; Jr. H. Jim ; Hause Fred N. ; Bandyopadhyay Basab ; Michael Mark W. ; Brennan William S., Method of planarizing a semiconductor topography using multiple polish pads.
    상세보기
  42. Shih Tsu,TWX ; Chang Jui-Yu,TWX ; Jang Syun-Ming,TWX ; Yu Chen-Hua,TWX, Method to protect alignment mark in CMP process.
    상세보기
  43. Hess, Jeffery S.; Leith, Steven D.; Schulte, Donald W.; Edwards, William; Obert, Jeffrey S.; Emery, Timothy R., Monitoring and test structures for silicon etching.
    상세보기
  44. Tseng Horng-Huei,TWX, Photolithography alignment mark and manufacturing method.
    상세보기
  45. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.
    상세보기
  46. Moriyama Shigeo (Tama JPX) Kawamura Yoshio (Kokubunji JPX) Homma Yoshio (Hinode-machi JPX) Kusukawa Kikuo (Fujino-machi JPX) Furusawa Takeshi (Hachioji JPX), Polishing method.
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  47. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.
    상세보기
  48. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.
    상세보기
  49. Lin Hway-Chi,TWX ; Lin Yu-Ku,TWX ; Chang Wen-Pin,TWX ; Wang Ying-Lang,TWX, Rule to determine CMP polish time.
    상세보기
  50. Lin, Hway-Chi; Lin, Yu-Ku; Chang, Wen-Pin; Wang, Ying-Lang, Rule to determine CMP polish time.
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  51. Lee Michael G. ; Beilin Solomon I., Self-aligned patterns by chemical-mechanical polishing particularly suited to the formation of MCM capacitors.
    상세보기
  52. Jost, Mark E.; Hansen, David J.; McDonald, Steven M., Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns.
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  53. Furumiya, Masayuki, Solid-state image sensing device and method of manufacturing the same.
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  54. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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  55. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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  56. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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  57. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
    상세보기
  58. Cote, William J.; Leach, Michael A., Wafer polishing and endpoint detection.
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