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Rework of polymeric dielectric electrical interconnect by laser photoablation 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/306
  • H01L-021/26
출원번호 US-0972665 (1992-11-06)
발명자 / 주소
  • Pan Ju-Don T. (Saratoga CA)
출원인 / 주소
  • Microelectronics and Computer Technology Corporation (Austin TX 02)
인용정보 피인용 횟수 : 64  인용 특허 : 0

초록

A metal/polymeric dielectric substrate has metal conductors selectively disconnected by photoablating the polymeric dielectric with an excimer laser, etching the exposed metal using the polymeric dielectric as a mask, and coating an additional layer of polymeric dielectric. This eliminates the need

대표청구항

A method of disconnecting metallization in an electrical interconnect, comprising the steps of: providing an electrically conductive metallization on portions of a planar substrate; disposing a first layer of ablative photoabsorptive polymeric dielectric on and in contact with the entire top surface

이 특허를 인용한 특허 (64)

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  60. Akram, Salman; Farnworth, Warren M.; Wood, Alan G., Semiconductor package having interconnect with conductive members.
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