이 특허를 인용한 특허 (44)

1. Erokhin,Yuri; Blake,Julian G., Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers.

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2. Nakamura,Seiichi; Nishihata,Hideki; Kasamatsu,Riyuusuke; Tsubuku,Kazunori; Bando,Akira; Tsumaki,Nobuo; Watanabe,Tomoji; Mera,Kazuo; Hayashi,Tsuneo; Kurosawa,Yoichi, Apparatus for manufacturing semiconductor substrates.

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3. Mito, Hiroaki; Sasada, Katsuhiro; Kato, Kazuo; Kudo, Tomohiro; Saeki, Tomonori; Yahagi, Yasuo; Kobayashi, Masayuki, Charged particle beam apparatus.

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4. Kawaguchi, Michihiro; Akeno, Kiminobu; Kagawa, Yoshinori; Asami, Yu; Yamaguchi, Keisuke, Charged particle beam drawing apparatus and charged particle beam drawing method.

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5. Blake, Julian G.; Murphy, Paul J., Cooled cleaving implant.

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6. Ramappa, Deepak; Rodier, Dennis, Dark currents and reducing defects in image sensors and photovoltaic junctions.

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7. Higgs, Victor, Detection method and apparatus metal particulates on semiconductors.

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8. Wendell Dennis L., Efficient on-pitch scannable sense amplifier.

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9. Motoi, Taiko; Ueno, Rie, Information acquisition apparatus, cross section evaluating apparatus, cross section evaluating method, and cross section working apparatus.

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10. Leavitt, William H; Smick, Theodore H; Gillespie, Joseph Daniel; Park, William H; Eide, Paul; Arnold, Drew; Ryding, Geoffrey, Ion implantation apparatus.

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11. Smick, Theodore H.; Gillespie, Joseph Daniel, Ion implantation apparatus.

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12. Kabasawa, Mitsuaki, Ion implantation apparatus and ion implantation method.

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13. Li,Chen Chung; Weng,Jui Chun; Wang,Chi Chieh; Kao,Tai Kun, Ion implanter and method of preventing undesirable ions from implanting a target wafer.

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14. Yamazaki, Shunpei; Takayama, Toru; Akiba, Mai, Light emitting device having an organic light emitting diode that emits white light.

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15. Walther, Steven R.; Persing, Harold M., Local pressure sensing in a plasma processing system.

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16. Chuang, Ming-Yeh, Low temperature implant scheme to improve BJT current gain.

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17. Hatem, Christopher R.; Colombeau, Benjamin, Low temperature ion implantation.

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18. Frye, Asa; Lavoie, Christian; Ozcan, Ahmet S.; Wall, Donald R., Low temperature ion implantation for improved silicide contacts.

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19. Pollock, John D.; Wan, Zhimin; Collart, Erik, Method for low temperature ion implantation.

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20. Pollock, John D.; Wan, Zhimin; Collart, Erik, Method for low temperature ion implantation.

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21. Pollock, John D.; Wan, Zhimin; Collart, Erik, Method for low temperature ion implantation.

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22. Kimura Hideki (Kanagawa JPX), Method for making a semiconductor device.

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23. Lin,Chun Te; Yang,Chih Sheng; Lee,Hong Zhi; Chen,Ta Te, Method for monitoring an ion implanter.

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24. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Ohnuma Hideto,JPX ; Takemura Yasuhiko,JPX ; Tanaka Koichiro,JPX, Method of doping crystalline silicon film.

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25. Shimomura, Akihisa; Nakamura, Osamu; Arao, Tatsuya; Miyairi, Hidekazu; Isobe, Atsuo; Takano, Tamae; Inoue, Kouki, Method of manufacturing a semiconductor device.

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26. Shimomura,Akihisa; Nakamura,Osamu; Arao,Tatsuya; Miyairi,Hidekazu; Isobe,Atsuo; Takano,Tamae; Inoue,Kouki, Method of manufacturing a semiconductor device.

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27. Ohnuma,Hideto, Method of manufacturing semiconductor device.

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28. Ohnuma,Hideto, Method of manufacturing semiconductor device.

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29. Ogasawara Takao,JPX ; Uemoto Tsutomu,JPX, Method of manufacturing thin film transistor.

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30. Noguchi Takatoshi,JPX ; Kiritani Norihiko,JPX, Method of producing semiconductor device.

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31. Hirose, Ryo; Okuyama, Ryosuke; Kurita, Kazunari, Method of producing semiconductor epitaxial wafer and method of producing solid-state image sensor.

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32. Yamada, Yoshiaki; Yokoyama, Takashi, Ohmic contact plug having an improved crack free TiN barrier metal in a contact hole and method of forming the same.

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33. Hatem, Christopher R.; Colombeau, Benjamin; Thanigaivelan, Thirumal; Shim, Kyu-Ha; Rodier, Dennis, Optimized halo or pocket cold implants.

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34. Hummel,Steven G.; Walker,Tom, Photoluminescence imaging with preferential detection of photoluminescence signals emitted from a specified material layer of a wafer or other workpiece.

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35. Cha, Jae-Chun; Jin, Seung-Woo; Lee, An-Bae; Jang, Il-Sik, Semiconductor device and method for fabricating the same.

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36. Soendker, Erich H.; Hertel, Thomas A.; Saldivar, Horacio, Semiconductor device having an inorganic coating layer applied over a junction termination extension.

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37. Borichevsky, Steven C., Semiconductor process pumping arrangements.

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38. Vassili Kitch, Structure and method for controlling copper diffusion and for utilizing low K materials for copper interconnects in integrated circuit structures.

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39. Arevalo, Edwin A.; Hatem, Christopher R.; Renau, Anthony; England, Jonathan Gerald, Techniques for forming shallow junctions.

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40. Moslehi Mehrdad M., Thermally conductive chuck for vacuum processor.

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41. Moslehi, Mehrdad M., Thermally conductive chuck for vacuum processor.

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42. Mehrdad M. Moslehi, Thermally conductive chuck with thermally separated sealing structures.

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43. Hatem, Christopher R.; Godet, Ludovic, USJ techniques with helium-treated substrates.

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44. Yamazaki, Shunpei; Takayama, Toru; Akiba, Mai, White light emitting device.

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