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Process for electroless plating tin, lead or tin-lead alloy 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-002/00
출원번호 US-0843015 (1992-02-28)
우선권정보 JP-0059642 (1991-03-01)
발명자 / 주소
  • Uchida Hiroki (Hirakata JPX) Kubo Motonobu (Hirakata JPX) Kiso Masayuki (Hirakata JPX) Hotta Teruyuki (Hirakata JPX) Kamitamari Tohru (Hirakata JPX)
출원인 / 주소
  • C. Uyemura and Company, Limited (Osaka JPX 03)
인용정보 피인용 횟수 : 175  인용 특허 : 0

초록

The invention provides a process for electroless plating tin, lead or tin-lead alloy on copper or copper alloy using an electroless plating bath containing a water soluble tin and/or lead salt, an acid capable of dissolving the salts, and a complexing agent. The tin and/or lead content in the bath i

대표청구항

A process for electroless plating tin, lead, or tin-lead alloy comprising the steps of: (a) electroless plating tin, lead, or tin-lead alloy on copper or copper alloy using an electroless plating bath comprising a water soluble tin salt, a water soluble lead salt, or a combination thereof, an acid c

이 특허를 인용한 특허 (175)

  1. Levey,Peter R.; Brown,Neil D., Acid electrolytes.
  2. Nemani, Srinivas D.; Koshizawa, Takehito, Air gap process.
  3. Purayath, Vinod R.; Ingle, Nitin K., Air gaps between copper lines.
  4. Kang, Sean; Ko, Jungmin; Luere, Oliver, Airgap formation with damage-free copper.
  5. Lee, Wei Ti; Hassan, Mohd Fadzli Anwar; Guo, Ted; Yu, Sang-Ho, Aluminum contact integration on cobalt silicide junction.
  6. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum oxide selective etch.
  7. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum selective etch.
  8. Gealy, Dan; Weimer, Ronald A., Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers.
  9. Xue, Jun; Hsu, Ching-Mei; Li, Zihui; Godet, Ludovic; Wang, Anchuan; Ingle, Nitin K., Anisotropic gap etch.
  10. Carpenter,Craig M.; Mardian,Allen P.; Dando,Ross S.; Tschepen,Kimberly R.; Derderian,Garo J., Apparatus and method for depositing materials onto microelectronic workpieces.
  11. Mardian, Allen P.; Rodriguez, Santiago R., Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes.
  12. Derderian,Garo J., Apparatus and methods for plasma vapor deposition processes.
  13. Carpenter,Craig M.; Dando,Ross S.; Mardian,Allen P., Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces.
  14. Lubomirsky,Dmitry; Shanmugasundram,Arulkumar; Pancham,Ian A.; Lopatin,Sergey, Apparatus for electroless deposition.
  15. Lubomirsky, Dmitry; Shanmugasundram, Arulkumar; Ellwanger, Russell; Pancham, Ian A.; Cheboli, Ramakrishna; Weidman, Timothy W., Apparatus for electroless deposition of metals onto semiconductor substrates.
  16. Lubomirsky, Dmitry; Shanmugasundram, Arulkumar; Pancham, Ian A., Apparatus for electroless deposition of metals onto semiconductor substrates.
  17. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  18. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  19. Lubomirsky, Dmitry, Chamber with flow-through source.
  20. Lubomirsky, Dmitry, Chamber with flow-through source.
  21. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  22. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  23. Wang, Xikun; Pandit, Mandar; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K.; Liu, Jie, Chlorine-based hardmask removal.
  24. Wang, Xikun; Cui, Zhenjiang; Park, Soonam; Ingle, Nitin K., Cobalt-containing material removal.
  25. Lubomirsky, Dmitry; Kim, Sung Je, Conditioned semiconductor system parts.
  26. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Conformal oxide dry etch.
  27. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Conformal oxide dry etch.
  28. Hoinkis, Mark; Yan, Chun; Miyazoe, Hiroyuki; Joseph, Eric, Copper residue chamber clean.
  29. Zhu, Lina; Kang, Sean S.; Nemani, Srinivas D.; Kao, Chia-Ling, Delicate dry clean.
  30. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.
  31. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.
  32. Purayath, Vinod R.; Wang, Anchuan; Ingle, Nitin K., Dopant etch selectivity control.
  33. Zhang, Jingchun; Ingle, Nitin K.; Wang, Anchuan, Dry etch process.
  34. Kim, Sang Hyuk; Yang, Dongqing; Lee, Young S.; Jung, Weon Young; Kim, Sang-jin; Hsu, Ching-Mei; Wang, Anchuan; Ingle, Nitin K., Dry-etch for selective oxidation removal.
  35. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.
  36. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.
  37. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Wang, Yunyu; Lee, Young, Dry-etch for silicon-and-carbon-containing films.
  38. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.
  39. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.
  40. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Dual discharge modes operation for remote plasma.
  41. Stevens,Joseph J.; Lubomirsky,Dmitry; Pancham,Ian; Olgado,Donald J. K.; Grunes,Howard E.; Mok,Yeuk Fai Edwin, Electroless deposition apparatus.
  42. Padhi, Deenesh; Yahalom, Joseph; Ramanathan, Sivakami; McGuirk, Chris R.; Gandikota, Srinivas; Dixit, Girish, Electroless deposition method.
  43. Padhi, Deenesh; Yahalom, Joseph; Ramanathan, Sivakami; McGuirk, Chris R.; Gandikota, Srinivas; Dixit, Girish, Electroless deposition method.
  44. Gandikota, Srinivas; McGuirk, Chris R.; Padhi, Deenesh; Malik, Muhammad Atif; Ramanathan, Sivakami; Dixit, Girish A.; Cheung, Robin, Electroless deposition method over sub-micron apertures.
  45. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  46. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  47. Ingle, Nitin K.; Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Enhanced etching processes using remote plasma sources.
  48. Korolik, Mikhail; Ingle, Nitin K.; Zhang, Jingchun; Wang, Anchuan; Liu, Jie, Etch suppression with germanium.
  49. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Even tungsten etch for high aspect ratio trenches.
  50. Purayath, Vinod R.; Ingle, Nitin K., Flash gate air gap.
  51. Pandit, Mandar; Wang, Xikun; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Fluorine-based hardmask removal.
  52. Park, Seung; Wang, Xikun; Liu, Jie; Wang, Anchuan; Kim, Sang-jin, Gas-phase tungsten etch.
  53. Kim, Sung Je; Kalita, Laksheswar; Pareek, Yogita; Kadam, Ankur; Goradia, Prerna Sonthalia; Thakur, Bipin; Lubomirsky, Dmitry, Generation of compact alumina passivation layers on aluminum plasma equipment components.
  54. Korolik, Mikhail; Ingle, Nitin; Kioussis, Dimitri, Germanium etching systems and methods.
  55. Cho, Tae; Kang, Sang Won; Yang, Dongqing; Lu, Raymond W.; Hillman, Peter; Celeste, Nicholas; Tan, Tien Fak; Park, Soonam; Lubomirsky, Dmitry, Grooved insulator to reduce leakage current.
  56. Tran, Toan Q.; Malik, Sultan; Lubomirsky, Dmitry; Roy, Shambhu N.; Kobayashi, Satoru; Cho, Tae Seung; Park, Soonam; Venkataraman, Shankar, High temperature chuck for plasma processing systems.
  57. Chen, Zhijun; Li, Zihui; Ingle, Nitin K.; Wang, Anchuan; Venkataraman, Shankar, Highly selective doped oxide removal method.
  58. Chen, Xinglong; Lubomirsky, Dmitry; Venkataraman, Shankar, Insulated semiconductor faceplate designs.
  59. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  60. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  61. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Integrated oxide and nitride recess for better channel contact in 3D architectures.
  62. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated oxide recess and floating gate fin trimming.
  63. Baukloh Achim,DEX ; Reiter Ulrich,DEX, Internally tin-coated copper pipe and method for coating a copper pipe.
  64. Sapre, Kedar; Ingle, Nitin; Tang, Jing, Intrench profile.
  65. Sapre, Kedar; Ingle, Nitin; Tang, Jing, Intrench profile.
  66. Nguyen, Son T.; Lubomirsky, Dmitry, Layered thin film heater and method of fabrication.
  67. Hsu, Ching-Mei; Ingle, Nitin K.; Hamana, Hiroshi; Wang, Anchuan, Low temperature gas-phase carbon removal.
  68. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Metal air gap.
  69. Cheung, Robin, Method and apparatus for treating a substrate.
  70. Lopatin,Sergey; Shanmugasundram,Arulkumar; Lubomirsky,Dmitry; Pancham,Ian A., Method for forming CoWRe alloys by electroless deposition.
  71. Kao, Chien-Teh; Chou, Jing-Pei (Connie); Lai, Chiukin (Steven); Umotoy, Sal; Huston, Joel M.; Trinh, Son; Chang, Mei; Yuan, Xiaoxiong (John); Chang, Yu; Lu, Xinliang; Wang, Wei W.; Phan, See-Eng, Method for removing oxides.
  72. Ko, Jungmin, Method of fin patterning.
  73. Cheung, Robin; Dordi, Yezdi; Tseng, Jennifer, Method of treating a substrate.
  74. Zheng,Lingyi A.; Doan,Trung T.; Breiner,Lyle D.; Ping,Er Xuan; Beaman,Kevin L.; Weimer,Ronald A.; Kubista,David J.; Basceri,Cem, Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces.
  75. Beaman,Kevin L.; Weimer,Ronald A.; Breiner,Lyle D.; Ping,Er Xuan; Doan,Trung T.; Basceri,Cem; Kubista,David J.; Zheng,Lingyi A., Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers.
  76. Beaman, Kevin L.; Doan, Trung T.; Breiner, Lyle D.; Weimer, Ronald A.; Ping, Er-Xuan; Kubista, David J.; Basceri, Cem; Zheng, Lingyi A., Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition.
  77. Beaman, Kevin L.; Doan, Trung T.; Breiner, Lyle D.; Weimer, Ronald A.; Ping, Er-Xuan; Kubista, David J.; Basceri, Cem; Zheng, Lingyi A., Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition.
  78. Beaman,Kevin L.; Doan,Trung T.; Breiner,Lyle D.; Weimer,Ronald A.; Ping,Er Xuan; Kubista,David J.; Basceri,Cem; Zheng,Lingyi A., Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition.
  79. Li, Zihui; Kao, Chia-Ling; Wang, Anchuan; Ingle, Nitin K., Methods for anisotropic control of selective silicon removal.
  80. Carpenter,Craig M.; Dynka,Danny, Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers.
  81. Dando, Ross S.; Gealy, Dan, Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces.
  82. Dando, Ross S.; Gealy, Dan, Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces.
  83. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of SiN films.
  84. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of metal and metal-oxide films.
  85. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Methods for etch of metal and metal-oxide films.
  86. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of sin films.
  87. Zheng, Lingyi A.; Doan, Trung T.; Breiner, Lyle D.; Ping, Er-Xuan; Beaman, Kevin L.; Weimer, Ronald A.; Basceri, Cem; Kubista, David J., Methods for forming small-scale capacitor structures.
  88. Hong, Sukwon; Hamana, Hiroshi; Liang, Jingmei, Methods of reducing substrate dislocation during gapfill processing.
  89. Zheng,Lingyi A.; Doan,Trung T.; Breiner,Lyle D.; Ping,Er Xuan; Weimer,Ronald A.; Kubista,David J.; Beaman,Kevin L.; Basceri,Cem, Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces.
  90. Basceri,Cem; Doan,Trung T.; Weimer,Ronald A.; Beaman,Kevin L.; Breiner,Lyle D.; Zheng,Lingyi A.; Ping,Er Xuan; Sarigiannis,Demetrius; Kubista,David J., Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces.
  91. Basceri,Cem; Doan,Trung T.; Weimer,Ronald A.; Beaman,Kevin L.; Breiner,Lyle D.; Zheng,Lingyi A.; Ping,Er Xuan; Sarigiannis,Demetrius; Kubista,David J., Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces.
  92. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.
  93. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.
  94. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K.; Anthis, Jeffrey W.; Schmiege, Benjamin, Oxide and metal removal.
  95. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  96. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  97. Xu, Lin; Chen, Zhijun; Wang, Anchuan; Nguyen, Son T., Oxide etch selectivity systems and methods.
  98. Lubomirsky, Dmitry, Oxygen compatible plasma source.
  99. Chen, Xinglong; Yang, Jang-Gyoo; Tam, Alexander; Tam, Elisha, Pedestal with multi-zone temperature control and multiple purge capabilities.
  100. Brist,Gary A.; Long,Gary B.; Sato,Daryl A., Photo-thermal induced diffusion.
  101. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.
  102. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Plasma-free metal etch.
  103. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Polarity control for remote plasma.
  104. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.
  105. Ramanathan, Sivakami; Padhi, Deenesh; Gandikota, Srinivas; Dixit, Girish A., Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application.
  106. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
  107. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
  108. Lubomirsky, Dmitry; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Kovarsky, Nicolay Y.; Wijekoon, Kapila, Process for electroless copper deposition.
  109. Zhang, Shengshui, Process of making negative electrode.
  110. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  111. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  112. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  113. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  114. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  115. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  116. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  117. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  118. Naik, Mehul; Ma, Paul F.; Nemani, Srinivas D., Protective via cap for improved interconnect performance.
  119. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry, Radial waveguide systems and methods for post-match control of microwaves.
  120. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  121. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  122. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  123. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.
  124. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.
  125. Dando, Ross S., Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces.
  126. Miller, Matthew W.; Basceri, Cem, Reactors, systems and methods for depositing thin films onto microfeature workpieces.
  127. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Remotely-excited fluorine and water vapor etch.
  128. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  129. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  130. Yang, Dongqing; Zhu, Lala; Wang, Fei; Ingle, Nitin K., Saving ion-damaged spacers.
  131. Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.
  132. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.
  133. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  134. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  135. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  136. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  137. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  138. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  139. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  140. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  141. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
  142. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
  143. Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.
  144. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and nitrogen.
  145. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and oxygen.
  146. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  147. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  148. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
  149. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
  150. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
  151. Pandit, Mandar B.; Wang, Anchuan; Ingle, Nitin K., Self-aligned process.
  152. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.
  153. Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Semiconductor processing systems having multiple plasma configurations.
  154. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  155. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  156. Nguyen, Andrew; Ramaswamy, Kartik; Nemani, Srinivas; Howard, Bradley; Vishwanath, Yogananda Sarode, Semiconductor system assemblies and methods of operation.
  157. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.
  158. Park, Seung; Wang, Anchuan, Silicon etch process with tunable selectivity to SiO2 and other materials.
  159. Korolik, Mikhail; Ingle, Nitin K.; Wang, Anchuan; Xu, Jingjing, Silicon germanium processing.
  160. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Silicon oxide selective removal.
  161. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
  162. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
  163. Chen, Zhijun; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Silicon-carbon-nitride selective etch.
  164. Lopatin,Sergey D.; Shanmugasundrum,Arulkumar; Shacham Diamand,Yosef, Silver under-layers for electroless cobalt alloys.
  165. Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.
  166. Luere, Olivier; Kang, Sean S.; Nemani, Srinivas D., Spacer formation.
  167. Sarigiannis,Demetrius; Meng,Shuang; Derderian,Garo J., Systems and methods for depositing material onto microfeature workpieces in reaction chambers.
  168. Kubista, David J.; Doan, Trung T.; Breiner, Lyle D.; Weimer, Ronald A.; Beaman, Kevin L.; Ping, Er-Xuan; Zheng, Lingyi A.; Basceri, Cem, Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers.
  169. Benjaminson, David; Lubomirsky, Dmitry, Thermal management systems and methods for wafer processing systems.
  170. Wang, Xikun; Pandit, Mandar; Wang, Anchuan; Ingle, Nitin K., Titanium nitride removal.
  171. Wang, Xikun; Xu, Lin; Wang, Anchuan; Ingle, Nitin K., Titanium oxide etch.
  172. Liu, Jie; Wang, Xikun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Tungsten oxide processing.
  173. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.
  174. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., V trench dry etch.
  175. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.
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