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Method of producing semiconductor substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/76
출원번호 US-0958724 (1992-10-09)
우선권정보 JP-0292258 (1991-10-11)
발명자 / 주소
  • Yamagata Kenji (Kawasaki JPX) Yonehara Takao (Atsugi JPX)
출원인 / 주소
  • Canon Kabushiki Kaisha (Tokyo JPX 03)
인용정보 피인용 횟수 : 130  인용 특허 : 0

초록 ▼

A method of producing a semiconductor substrate, comprises the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate; sticking a supporting substr

대표청구항 ▼

A method of producing a semiconductor substrate, comprising the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate having many pores; sticking

이 특허를 인용한 특허 (130)

  1. Or-Bach, Zvi; Wurman, Ze'ev, 3D integrated circuit with logic.
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  2. Sekar, Deepak C.; Or-Bach, Zvi; Cronquist, Brian, 3D memory semiconductor device and structure.
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  3. Or-Bach, Zvi, 3D semiconductor device.
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  4. Or-Bach, Zvi, 3D semiconductor device.
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  5. Or-Bach, Zvi; Wurman, Zeev, 3D semiconductor device.
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  6. Or-Bach, Zvi; Cronquist, Brian; Sekar, Deepak, 3D semiconductor device and structure.
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  7. Or-Bach, Zvi; Cronquist, Brian; Sekar, Deepak, 3D semiconductor device and structure.
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  8. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian, 3D semiconductor device and structure.
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  9. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, 3D semiconductor device and structure.
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  10. Sekar, Deepak; Or-Bach, Zvi; Cronquist, Brian, 3D semiconductor device and structure.
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  11. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; Wurman, Ze'ev; Lim, Paul, 3D semiconductor device and structure with back-bias.
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  12. Or-Bach, Zvi; Wurman, Ze'ev, 3D semiconductor device including field repairable logics.
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  13. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Wurman, Zeev, 3D semiconductor device, fabrication method and system.
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  14. Or-Bach, Zvi; Widjaja, Yuniarto, 3DIC system with a two stable state memory and back-bias region.
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  15. Phelps, Richard A.; Slinkman, James A., Air gaps formed by porous silicon removal.
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  16. Or-Bach, Zvi; Wurman, Zeev, Automation for monolithic 3D devices.
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  17. Lee, Sang-Yun, Bonded semiconductor structure and method of making the same.
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  18. Lim Kwang-shin,KRX ; Park Sang-o,KRX, Cleaning compositions for wafers used in semiconductor devices.
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  19. Toor, Fatima; Branz, Howard, Copper-assisted, anti-reflection etching of silicon surfaces.
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  20. Pushpala Sagar ; Naem Abdalla, Dual side fabricated semiconductor wafer.
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  21. Abdalla Aly Naem BE, Dual-sided semiconductor chip and method for forming the chip with a conductive path through the chip that connects elements on each side of the chip.
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  22. Naem, Abdalla Aly, Dual-sided semiconductor device and method of forming the device with a resistive element that requires little silicon surface area.
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  23. Naem,Abdalla Aly, Dual-sided semiconductor device with a resistive element that requires little silicon surface area.
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  24. Yuan, Hao-Chih; Branz, Howard M.; Page, Matthew R., Forming high-efficiency silicon solar cells using density-graded anti-reflection surfaces.
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  25. Padmanabhan, Gobi R.; Yegnashankaran, Visvamohan, Hermetic seal for silicon die with metal feed through structure.
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  26. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian, Integrated circuit device and structure.
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  27. Furman, Bruce K.; Purushothaman, Sampath; Sankarapandian, Muthumanickam; Topol, Anna, Layer transfer process and functionally enhanced integrated circuits produced thereby.
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  28. Lim Kwang-shin,KRX ; Park Sang-o,KRX, Method for cleaning an integrated circuit device using an aqueous cleaning composition.
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  29. Or-Bach, Zvi; Wurman, Zeev, Method for design and manufacturing of a 3D semiconductor device.
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  30. Or-Bach, Zvi, Method for developing a custom device.
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  31. Or-Bach, Zvi; Sekar, Deepak C., Method for fabricating novel semiconductor and optoelectronic devices.
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  32. Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C.; Or-Bach, Zvi, Method for fabrication of a semiconductor device and structure.
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  33. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C., Method for fabrication of a semiconductor device and structure.
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  34. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian, Method for fabrication of a semiconductor device and structure.
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  35. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.
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  36. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.
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  37. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.
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  38. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Wurman, Ze'ev, Method for fabrication of a semiconductor device and structure.
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  39. Sekar, Deepak; Or-Bach, Zvi; Cronquist, Brian, Method for fabrication of a semiconductor device and structure.
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  40. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of configurable systems.
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  41. Tayanaka, Hiroshi, Method for making a semiconductor substrate comprising a variant porous layer.
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  42. Aspar, Bernard; Bruel, Michel; Moriceau, Hubert, Method for making a thin film using pressurization.
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  43. Chan, Kevin K.; Huang, Lijuan; McFeely, Fenton R.; Solomon, Paul M.; Wong, Hon-Sum Philip, Method for manufacturing device substrate with metal back-gate and structure formed thereby.
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  44. Chan,Kevin K.; Huang,Lijuan; McFeely,Fenton R.; Solomon,Paul M.; Wong,Hon Sum Philip, Method for manufacturing device substrate with metal back-gate and structure formed thereby.
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  45. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
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  46. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Method for producing semiconductor substrate by wafer bonding.
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  47. Yamagata Kenji,JPX ; Yonehara Takao,JPX ; Atoji Tadashi,JPX ; Sakaguchi Kiyofumi,JPX, Method for production of SOI substrate by pasting and SOI substrate.
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  48. Matsushita Takeshi,JPX ; Tayanaka Hiroshi,JPX, Method for separating a device-forming layer from a base body.
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  49. Matsushita, Takeshi; Tayanaka, Hiroshi, Method for separating a device-forming layer from a base body.
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  50. Matsushita, Takeshi; Tayanaka, Hiroshi, Method for separating a device-forming layer from a base body.
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  51. Le Vaillant, Yves-Matthieu, Method for transferring an epitaxial layer.
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  52. Kenji Yamagata JP; Satoshi Matsumura JP, Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate.
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  53. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; Wurman, Ze'ev; Lim, Paul, Method of constructing a semiconductor device and structure.
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  54. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C., Method of fabricating a semiconductor device and structure.
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  55. Hsieh Chia-Ta,TWX ; Tsao Jenn,TWX ; Kuo Di-Son,TWX ; Lin Yai-Fen,TWX ; Sung Hung-Cheng,TWX, Method of fabricating buried source to shrink chip size in memory array.
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  56. Padmanabhan,Gobi R.; Yegnashankaran,Visvamohan, Method of forming a hermetic seal for silicon die with metal feed through structure.
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  57. Or-Bach, Zvi; Sekar, Deepak; Cronquist, Brian; Wurman, Ze'ev, Method of forming three dimensional integrated circuit devices using layer transfer technique.
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  58. Hopper,Peter J.; Vashchenko,Vladislav; Johnson,Peter; Drury,Robert, Method of forming through-the-wafer metal interconnect structures.
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  59. Or-Bach, Zvi; Widjaja, Yuniarto, Method of maintaining a memory state.
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  60. Torvik,John Targe, Method of making a hybrid substrate having a thin silicon carbide membrane layer.
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  61. Torvik, John Tarje, Method of making a hybride substrate having a thin silicon carbide membrane layer.
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  62. Carr, William; Usenko, Alexander, Method of manufacture of a multi-layered substrate with a thin single crystalline layer and a versatile sacrificial layer.
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  63. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian, Method of manufacturing a semiconductor device and structure.
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  64. Sekar, Deepak C.; Or-Bach, Zvi, Method of manufacturing a semiconductor device with two monocrystalline layers.
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  65. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Israel; de Jong, J. L.; Sekar, Deepak C.; Lim, Paul, Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer.
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  66. Or-Bach, Zvi; Cronquist, Brian; Sekar, Deepak, Method of processing a semiconductor device.
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  68. Or-Bach, Zvi; Wurman, Ze'ev, Method to construct systems.
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  71. Lee,Tien Hsi, Methods for transferring a layer onto a substrate.
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  73. Alexander Yuri Usenko, Process for lift-off of a layer from a substrate.
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  74. Yamagata Kenji,JPX ; Yonehara Takao,JPX, Process for producing a semiconductor substrate.
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  76. Sakaguchi,Kiyofumi; Yonehara,Takao, Process for production of semiconductor substrate.
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  77. Bruel Michel,FRX ; Di Cioccio Lea,FRX, Process for the separation of at least two elements of a structure in contact with one another by ion implantation.
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  78. Sadwick, Laurence P.; Mojarradi, Mohammad M.; Hwu, Ruey-Jen; Chern, Jehn-Huar, Processes and packaging for high voltage integrated circuits, electronic devices, and circuits.
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  79. Yamagata Kenji,JPX ; Sakaguchi Kiyofumi,JPX, SOI substrate processing method.
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  80. Sekar, Deepak C.; Or-Bach, Zvi, Self aligned semiconductor device and structure.
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  81. Or-Bach, Zvi; Lim, Paul; Sekar, Deepak C., Semiconductor and optoelectronic devices.
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  82. Or-Bach, Zvi; Sekar, Deepak, Semiconductor and optoelectronic devices.
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  84. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Semiconductor article with porous structure.
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  86. Or-Bach, Zvi, Semiconductor device and structure.
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