[특허]Detecting the endpoint of chem-mech polishing and resulting semiconductor device

Detecting the endpoint of chem-mech polishing and resulting semiconductor device 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	B24B-001/00 B24B-049/04
출원번호	US-0911851 (1992-07-10)
발명자 / 주소	Rostoker Michael D. (San Jose CA)
출원인 / 주소	LSI Logic Corporation (Milpitas CA 02)
인용정보	피인용 횟수 : 86 인용 특허 : 0

초록 ▼

A contact structure is formed atop a semiconductor wafer at a level whereat it is desired to terminate polishing of a layer overlying the contact structure. When the contact structure becomes exposed to a polishing slurry, an electrical characteristic, such as resistance or impedance, is registered by measuring apparatus. In one embodiment, two or more contact structures are formed atop the wafer, vias are formed through the wafer, and the vias are filled, thereby providing a conductive path from the contact structures to the back side of the wafer. The measuring apparatus probes the filled vias on the back side of the wafer. A change in resistance/impedance indicates that the contact structures have become exposed during polishing, and polishing is terminated. In another embodiment of the invention, one or more contact structures are formed atop the wafer. The measuring apparatus is connected to a probe in the polishing slurry, and to the wafer itself, such as to the back side of the wafer. Again, a change in resistance/impedance indicates that the contact structures have become exposed during polishing, and polishing is terminated.

대표청구항 ▼

A method of detecting an endpoint of polishing in a process of polishing overlying layers atop a surface of a semiconductor wafer, comprising: forming a contact structure on a semiconductor wafer at a selected level atop a top surface of the semiconductor wafer, the level being selected as a level whereat it is desired to terminate polishing of at least one layer disposed on the surface of the wafer; forming the at least one layer overlying the top surface of the wafer, such that the contact structure is embedded within the at least one overlying layer; polishing the at least one overlying layer with a slurry having sufficient conductivity to be electrically measurable; and during polishing, measuring an electrical characteristic between the contact structure and the slurry, and observing a noticeable change in the electrical characteristic when the contact structure becomes exposed to the slurry.

이 특허를 인용한 특허 (86)

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Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
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Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
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Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
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Tolles,Robert D., Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus.
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Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

Detecting the endpoint of chem-mech polishing and resulting semiconductor device 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

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연합인증

Detecting the endpoint of chem-mech polishing and resulting semiconductor device 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

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이 특허를 인용한 특허 (86)

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