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Method of making a multilayer thin film structure 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G03C-005/00
  • H01L-021/283
출원번호 US-0890331 (1992-05-26)
발명자 / 주소
  • Chang Kenneth (Hopewell Junction NY) Czornyj George (Poughkeepsie NY) Farooq Mukta S. (Hopewell Junction NY) Kumar Ananda H. (Hopewell Junction NY) Pitler Marvin S. (late of Poughkeepsie NY by Peter
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 91  인용 특허 : 0

초록

A method of making a multilayer thin film structure on the surface of a dielectric substrate which includes the steps of: a. forming a multilayer thin film structure including the steps of: applying a first layer of dielectric polymeric material on the surface of a dielectric substrate, applying a s

대표청구항

A method of making a planar multilayer thin film structure on the surface of a dielectric substrate comprising the steps of: a. forming a multilayer thin film structure comprising the steps of: applying a first layer of dielectric polymeric material on a surface of a dielectric substrate, applying a

이 특허를 인용한 특허 (91)

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