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Substrate processing apparatus 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • F28F-007/00
  • H01L-021/324
출원번호 US-0889288 (1992-05-28)
우선권정보 JP-0153885 (1991-05-28); JP-0153886 (1991-05-28)
발명자 / 주소
  • Wada Yuichi (Kofu JPX)
출원인 / 주소
  • Tokyo Electron Limited (Tokyo JPX 03)
인용정보 피인용 횟수 : 66  인용 특허 : 0

초록

A magnetron sputtering apparatus having a heating susceptor in a vacuum chamber to support a wafer. The wafer is fixed on a ring-shaped projection by clamps at wafer-mounted section on the top of the susceptor. A substantially closed space is formed between the underside of the wafer and that face o

대표청구항

An apparatus for processing a substrate in an atmospheric gas while controlling a temperature of the substrate, comprising: a process chamber; a susceptor arranged in the process chamber to support the substrate; a substrate support formed in the susceptor and made of a material having an excellent

이 특허를 인용한 특허 (66)

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  33. Ito,Kazunori; Hanaoka,Katsunari; Deguchi,Hiroshi; Onagi,Nobuaki; Tashiro,Hiroko; Shibata,Kiyoto; Aman,Yasutomo; Miura,Hiroshi; Ohtani,Wataru; Yuzurihara,Hajime; Shinkai,Masaru, Optical device substrate film-formation apparatus, optical disk substrate film-formation method, substrate holder manufacture method, substrate holder, optical disk and a phase-change recording type of optical disk.
  34. Zhu, Mingwei; Patibandla, Nag B.; Wang, Rongjun; Diehl, Daniel Lee; Agrawal, Vivek; Subramani, Anantha, Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices.
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