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Method for forming semiconductor thin film 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/20
출원번호 US-0919372 (1992-07-29)
우선권정보 JP-0247662 (1989-09-23)
발명자 / 주소
  • Yonehara Takao (Atsugi JPX)
출원인 / 주소
  • Canon Kabushiki Kaisha (Tokyo JPX 03)
인용정보 피인용 횟수 : 158  인용 특허 : 0

초록 ▼

A method for forming a semiconductor thin film comprises crystallizing an amorphous silicon thin film by a first thermal treatment at 700°C. or lower for ten hours or longer and carrying out a second thermal treatment at 1200°C. or higher in which a lamp light is radiated to the crystallized thin fi

대표청구항 ▼

A method for forming a semiconductor thin film which comprises: (i) crystallizing an amorphous thin film formed on an amorphous insulating surface of a substrate by a first thermal treatment at 700°C. or lower for at least ten hours to form a crystallized thin film having a grain size of at least 1

이 특허를 인용한 특허 (158)

  1. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX ; Zhang Hongyong,JPX, Active Matry Display.
    상세보기
  2. Takemura, Yasuhiko, Display device and glass member and substrate member having film comprising aluminum, nitrogen and oxygen.
    상세보기
  3. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Display switch with double layered gate insulation and resinous interlayer dielectric.
    상세보기
  4. Takemura Yasuhiko,JPX, Electro-optical device.
    상세보기
  5. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Fabrication method for semiconductor substrate.
    상세보기
  6. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
    상세보기
  7. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
    상세보기
  8. Fukada,Takeshi; Sakama,Mitsunori; Teramoto,Satoshi, Glass substrate assembly, semiconductor device and method of heat-treating glass substrate.
    상세보기
  9. Shunpei Yamazaki JP; Hisashi Ohtani JP, Heating treatment device, heating treatment method and fabrication method of semiconductor device.
    상세보기
  10. Yamazaki,Shunpei; Ohtani,Hisashi, Heating treatment device, heating treatment method and fabrication method of semiconductor device.
    상세보기
  11. Yamazaki,Shunpei; Ohtani,Hisashi, Heating treatment device, heating treatment method and fabrication method of semiconductor device.
    상세보기
  12. Yamauchi, Yukio, Insulated gate field effect semiconductor device and forming method thereof.
    상세보기
  13. Yamazaki, Shunpei; Takemura, Yasuhiko, Insulated gate field effect transistor and method for forming the same.
    상세보기
  14. Yamazaki, Shunpei; Takemura, Yasuhiko, Insulated gate field effect transistor and method for forming the same.
    상세보기
  15. Takemura Yasuhiko,JPX, Insulated gate semiconductor device and process for fabricating the same.
    상세보기
  16. Takemura Yasuhiko,JPX, Insulated gate semiconductor device and process for fabricating the same.
    상세보기
  17. Takemura,Yasuhiko, Insulated gate semiconductor device and process for fabricating the same.
    상세보기
  18. Yasuhiko Takemura JP, Insulated gate semiconductor device and process for fabricating the same.
    상세보기
  19. Yasuhiko Takemura JP, Insulated gate semiconductor device and process for fabricating the same.
    상세보기
  20. Hongyong Zhang JP; Hideto Ohnuma JP; Yasuhiko Takemura JP, METHODOLOGY FOR PRODUCING THIN FILM SEMICONDUCTOR DEVICES BY CRYSTALLIZING AN AMORPHOUS FILM WITH CRYSTALLIZATION PROMOTING MATERIAL, PATTERNING THE CRYSTALLIZED FILM, AND THEN INCREASING THE CRYSTAL.
    상세보기
  21. Yamazaki,Shunpei; Ohtani,Hisashi; Shimada,Hiroyuki; Sakama,Mitsunori; Abe,Hisashi; Teramoto,Satoshi, Manufacturing method of a thin film semiconductor device.
    상세보기
  22. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX, Method and manufacturing semiconductor device.
    상세보기
  23. Yamazaki,Shunpei; Zhang,Hongyong; Kusumoto,Naoto; Takemura,Yasuhiko, Method for crystallizing semiconductor material.
    상세보기
  24. Shunpei Yamazaki JP; Hongyong Zhang JP; Naoto Kusumoto JP; Yasuhiko Takemura JP, Method for crystallizing semiconductor material without exposing it to air.
    상세보기
  25. Yamazaki, Shunpei; Zhang, Hongyong; Kusumoto, Naoto; Takemura, Yasuhiko, Method for crystallizing semiconductor material without exposing it to air.
    상세보기
  26. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method for fabricating a semiconductor device.
    상세보기
  27. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
    상세보기
  28. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
    상세보기
  29. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.
    상세보기
  30. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Method for forming a semiconductor device.
    상세보기
  31. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Method for forming a semiconductor device in which the insulating layer is heated to contract after crystallization of t.
    상세보기
  32. Shimizu Satoshi,JPX ; Ueno Shuichi,JPX ; Maeda Shigenobu,JPX ; Ipposhi Takashi,JPX, Method for making a thin film transistor.
    상세보기
  33. Ohtani, Hisashi; Miyanaga, Akiharu; Fukunaga, Takeshi; Zhang, Hongyong, Method for manufacturing a semiconductor device.
    상세보기
  34. Ohtani,Hisashi; Miyanaga,Akiharu; Fukunaga,Takeshi; Zhang,Hongyong, Method for manufacturing a semiconductor device.
    상세보기
  35. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method for manufacturing a thin film transistor device.
    상세보기
  36. Yamazaki, Shunpei; Takemura, Yasuhiko, Method for manufacturing a thin film transistor using a high pressure oxidation step.
    상세보기
  37. Ohtani, Hisashi; Miyanaga, Akiharu; Zhang, Hongyong; Yamaguchi, Naoaki, Method for manufacturing semiconductor device.
    상세보기
  38. Zhang Hongyong,JPX ; Takayama Toru,JPX, Method for producing a semiconductor device including doping with a catalyst that is a group IV element.
    상세보기
  39. Zhang Hongyong,JPX ; Takayama Toru,JPX, Method for producing a semiconductor device including doping with a group IV element.
    상세보기
  40. Hongyong Zhang JP; Yasuhiko Takemura JP; Toru Takayama JP, Method for producing semiconductor device.
    상세보기
  41. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method for producing semiconductor device.
    상세보기
  42. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method for producing semiconductor device.
    상세보기
  43. Zhang Hongyong,JPX ; Takemura Yasuhiko,JPX ; Takayama Toru,JPX, Method for producing semiconductor device.
    상세보기
  44. Zhang, Hongyong; Takemura, Yasuhiko; Takayama, Toru, Method for producing semiconductor device.
    상세보기
  45. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
    상세보기
  46. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Takemura Yasuhiko,JPX, Method of crystallizing thin films when manufacturing semiconductor devices.
    상세보기
  47. Yasuhiko Takemura JP, Method of fabricating a semiconductor device.
    상세보기
  48. Fukunaga,Takeshi; Ohtani,Hisashi; Miyanaga,Akiharu, Method of fabricating a semiconductor device utilizing a catalyst material solution.
    상세보기
  49. Zhang Hongyong,JPX ; Teramoto Satoshi,JPX, Method of fabricating a thin film transistor.
    상세보기
  50. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of d.
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  51. Zhang Hongyong,JPX ; Takemura Yasuhiko,JPX, Method of forming a transistor with an LDD structure.
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  52. Minegishi Masahiro,JPX ; Ino Masumitsu,JPX ; Kunii Masafumi,JPX ; Urazono Takenobu,JPX ; Hayashi Hisao,JPX, Method of forming polycrystalline semiconductor thin film.
    상세보기
  53. Isobe,Atsuo; Arao,Tatsuya, Method of manufacturing a semiconductor device.
    상세보기
  54. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Kusumoto Naoto,JPX ; Ohnuma Hideto,JPX, Method of manufacturing a semiconductor device.
    상세보기
  55. Yamazaki, Shunpei; Ohtani, Hisashi; Shimada, Hiroyuki; Sakama, Mitsunori; Abe, Hisashi; Teramoto, Satoshi, Method of manufacturing a semiconductor device.
    상세보기
  56. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.
    상세보기
  57. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method of manufacturing a semiconductor device.
    상세보기
  58. Yamazaki, Shunpei; Teramoto, Satoshi; Kusumoto, Naoto; Ohnuma, Hideto, Method of manufacturing a semiconductor device and manufacturing system thereof.
    상세보기
  59. Yamazaki, Shunpei; Teramoto, Satoshi; Kusumoto, Naoto; Ohnuma, Hideto, Method of manufacturing a semiconductor device and manufacturing system thereof.
    상세보기
  60. Mitsuki, Toru; Shichi, Takeshi; Maekawa, Shinji; Shibata, Hiroshi; Miyanaga, Akiharu, Method of manufacturing a semiconductor device having a crystallized semiconductor film.
    상세보기
  61. Zhang, Hongyong; Yamazaki, Shunpei, Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions.
    상세보기
  62. Isobe, Atsuo; Arao, Tatsuya, Method of manufacturing a semiconductor device, utilizing a laser beam for crystallization.
    상세보기
  63. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method of manufacturing a thin film transistor device.
    상세보기
  64. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Method of manufacturing a thin film transistor using light irradiation to form impurity regions.
    상세보기
  65. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Inushima Takashi,JPX ; Fukada Takeshi,JPX, Method of manufacturing a thin film transistor using multiple sputtering chambers.
    상세보기
  66. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Inushima Takashi,JPX ; Fukada Takeshi,JPX, Method of manufacturing gate insulated field effect transistors.
    상세보기
  67. Yamazaki, Shunpei; Zhang, Hongyong; Inushima, Takashi; Fukada, Takeshi, Method of manufacturing gate insulated field effect transistors.
    상세보기
  68. Yamazaki,Shunpei; Zhang,Hongyong; Inushima,Takashi; Fukada,Takeshi, Method of manufacturing gate insulated field effect transistors.
    상세보기
  69. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Takeyama Junichi,JPX, Method of preparing a semiconductor having a controlled crystal orientation.
    상세보기
  70. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi; Takeyama, Junichi, Method of preparing a semiconductor having controlled crystal orientation.
    상세보기
  71. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Process for fabricating a thin film transistor semiconductor device.
    상세보기
  72. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.
    상세보기
  73. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.
    상세보기
  74. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.
    상세보기
  75. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating semiconductor device.
    상세보기
  76. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating semiconductor device.
    상세보기
  77. Ohtani,Hisashi; Fukunaga,Takeshi; Miyanaga,Akiharu, Process for fabricating semiconductor device.
    상세보기
  78. Takemura Yasuhiko,JPX, Process for fabricating semiconductor device.
    상세보기
  79. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating thin film transistors.
    상세보기
  80. Yamagata Kenji,JPX ; Yonehara Takao,JPX, Process for producing a semiconductor substrate.
    상세보기
  81. Yamagata Kenji,JPX ; Yonehara Takao,JPX ; Sato Nobuhiko,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate.
    상세보기
  82. Sakaguchi,Kiyofumi; Yonehara,Takao, Process for production of semiconductor substrate.
    상세보기
  83. Takayama Toru (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallize.
    상세보기
  84. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
    상세보기
  85. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Shunpei Yamazaki JP; Yasuhiko Takemura JP, Semiconductor and process for fabricating the same.
    상세보기
  86. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Semiconductor and process for fabricating the same.
    상세보기
  87. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Semiconductor article with porous structure.
    상세보기
  88. Akiharu Mitanaga JP; Hisashi Ohtani JP; Satoshi Teramoto JP, Semiconductor device.
    상세보기
  89. Mitanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Teramoto Satoshi,JPX, Semiconductor device.
    상세보기
  90. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu, Semiconductor device and fabrication method of the same.
    상세보기
  91. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
    상세보기
  92. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.
    상세보기
  93. Okada Takako,JPX ; Kambayashi Shigeru,JPX ; Yabuki Moto,JPX ; Onga Shinji,JPX ; Tsunashima Yoshitaka,JPX ; Mikata Yuuichi,JPX ; Okano Haruo,JPX, Semiconductor device and its fabricating method.
    상세보기
  94. Okada Takako,JPX ; Kambayashi Shigeru,JPX ; Yabuki Moto,JPX ; Onga Shinji,JPX ; Tsunashima Yoshitaka,JPX ; Mikata Yuuichi,JPX ; Okano Haruo,JPX, Semiconductor device and its fabricating method.
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  95. Okada Takako,JPX ; Kambayashi Shigeru,JPX ; Yabuki Moto,JPX ; Onga Shinji,JPX ; Tsunashima Yoshitaka,JPX ; Mikata Yuuichi,JPX ; Okano Haruo,JPX, Semiconductor device and its fabricating method.
    상세보기
  96. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
    상세보기
  97. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
    상세보기
  98. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
    상세보기
  99. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
    상세보기
  100. Yamazaki, Shunpei; Suzawa, Hideomi; Kusuyama, Yoshihiro; Ono, Koji; Koyama, Jun, Semiconductor device and manufacturing method thereof.
    상세보기
  101. Yamazaki, Shunpei; Suzawa, Hideomi; Kusuyama, Yoshihiro; Ono, Koji; Koyama, Jun, Semiconductor device and manufacturing method thereof.
    상세보기
  102. Yamazaki, Shunpei; Suzawa, Hideomi; Kusuyama, Yoshihiro; Ono, Koji; Koyama, Jun, Semiconductor device and manufacturing method thereof.
    상세보기
  103. Yamazaki,Shunpei; Suzawa,Hideomi; Kusuyama,Yoshihiro; Ono,Koji; Koyama,Jun, Semiconductor device and manufacturing method thereof.
    상세보기
  104. Yamazaki,Shunpei; Suzawa,Hideomi; Kusuyama,Yoshihiro; Ono,Koji; Koyama,Jun, Semiconductor device and manufacturing method thereof.
    상세보기
  105. Zhang, Hongyong, Semiconductor device and manufacturing method thereof.
    상세보기
  106. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
    상세보기
  107. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
    상세보기
  108. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
    상세보기
  109. Shunpei Yamazaki JP; Yasuhiko Takemura JP, Semiconductor device and method for forming the same.
    상세보기
  110. Shunpei Yamazaki JP; Yasuhiko Takemura JP, Semiconductor device and method for forming the same.
    상세보기
  111. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for forming the same.
    상세보기
  112. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX, Semiconductor device and method for forming the same.
    상세보기
  113. Yamazaki, Shunpei; Takemura, Yasuhiko, Semiconductor device and method for forming the same.
    상세보기
  114. Yamazaki, Shunpei; Takemura, Yasuhiko, Semiconductor device and method for forming the same.
    상세보기
  115. Yamazaki, Shunpei; Takemura, Yasuhiko; Mase, Akira; Uochi, Hideki, Semiconductor device and method for forming the same.
    상세보기
  116. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
    상세보기
  117. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
    상세보기
  118. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi; Takeyama, Junichi, Semiconductor device and method for its preparation.
    상세보기
  119. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi; Takeyama,Junichi, Semiconductor device and method for its preparation.
    상세보기
  120. Akiharu Miyanaga JP; Hisashi Ohtani JP; Satoshi Teramoto JP, Semiconductor device and method for manufacturing the same.
    상세보기
  121. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
    상세보기
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    상세보기
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    상세보기
  124. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
    상세보기
  125. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
    상세보기
  126. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
  137. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.
    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
  147. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Kusumoto Naoto,JPX ; Takemura Yasuhiko,JPX, Semiconductor material and method for forming the same and thin film transistor.
    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
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    상세보기
  158. Zhang,Hongyong; Yamazaki,Shunpei, Thin-film transistor.
    상세보기

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