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Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/46
출원번호 US-0013386 (1993-02-04)
발명자 / 주소
  • Yoder Max N. (Falls Church VA)
출원인 / 주소
  • The United States of America as represented by the Secretary of the Navy (Washington DC 06)
인용정보 피인용 횟수 : 261  인용 특허 : 0

초록

An apparatus for and a method of growing thin films of the elemental semiconductors (group IVB), i.e., silicon, germanium, tin, lead, and, especially diamond, using modified atomic layer epitaxial (ALE) growth techniques are disclosed. In addition, stoichiometric and non-stoichiometric compounds of

대표청구항

A growth apparatus for atomic layer epitaxial (ALE) growth of thin films upon the surfaces of a plurality of substrates of the elemental semiconductors comprising: a growth reactor chamber means for securing said plurality of substrates therein to allow the growth of thin films upon said surfaces th

이 특허를 인용한 특허 (261)

  1. Sneh, Ofer, ALD apparatus and method.
  2. Sneh, Ofer, ALD apparatus and method.
  3. Sneh, Ofer, ALD apparatus and method.
  4. Sneh, Ofer, ALD apparatus and method.
  5. Sneh, Ofer, ALD method and apparatus.
  6. Sneh,Ofer, ALD method and apparatus.
  7. Bondestam, Niklas; Lindfors, Sven, ALD reactor and method with controlled wall temperature.
  8. Choi, Kenric T.; Narwankar, Pravin K.; Kher, Shreyas S.; Nguyen, Son T.; Deaton, Paul; Ngo, Khai; Chhabra, Paul; Ouye, Alan H.; Wu, Dien-Yeh (Daniel), Ampoule for liquid draw and vapor draw with a continuous level sensor.
  9. Lee, Wei Ti; Chiao, Steve H., Ampoule splash guard apparatus.
  10. Lee,Wei Ti; Chiao,Steve H., Ampoule splash guard apparatus.
  11. Jallepally, Ravi; Li, Shih-Hung; Duboust, Alain; Zhao, Jun; Chen, Liang-Yuh; Carl, Daniel A., Apparatus and method for fast-cycle atomic layer deposition.
  12. Chen, Ling; Ku, Vincent W.; Chung, Hua; Marcadal, Christophe; Ganguli, Seshadri; Lin, Jenny; Wu, Dien Yeh; Ouye, Alan; Chang, Mei, Apparatus and method for generating a chemical precursor.
  13. Chen,Ling; Ku,Vincent W.; Chang,Mei; Wu,Dien Yeh; Chung,Hua, Apparatus and method for hybrid chemical processing.
  14. Chen,Ling; Ku,Vincent W.; Chang,Mei; Wu,Dien Yeh; Chung,Hua, Apparatus and method for hybrid chemical processing.
  15. Chen, Chen-An; Gelatos, Avgerinos; Yang, Michael X.; Xi, Ming; Hytros, Mark M., Apparatus and method for plasma assisted deposition.
  16. Chen,Chen An; Gelatos,Avgerinos; Yang,Michael X.; Xi,Ming; Hytros,Mark M., Apparatus and method for plasma assisted deposition.
  17. Baek, Yong-Ku; Lee, Seung-Hoon, Apparatus and method for thin film deposition.
  18. Kim, Sam H.; Hosokawa, Akihiro; Suh, Dong Choon, Apparatus and method for uniform substrate heating and contaminate collection.
  19. Lei, Lawrence C., Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition.
  20. Sneh, Ofer; Seidel, Thomas E.; Galewski, Carl, Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition.
  21. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  22. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  23. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  24. Conchieri, Brian P.; Dussault, David D.; Ishaq, Mousa H., Apparatus and system for eliminating contaminants on a substrate surface.
  25. Gadgil, Prasad Narhar, Apparatus for atomic layer chemical vapor deposition.
  26. Thakur, Randhir P. S.; Mak, Alfred W.; Xi, Ming; Glenn, Walter Benjamin; Khan, Ahmad A.; Al-Shaikh, Ayad A.; Gelatos, Avgerinos V.; Umotoy, Salvador P., Apparatus for cyclical depositing of thin films.
  27. Thakur,Randhir P. S.; Mak,Alfred W.; Xi,Ming; Glenn,Walter Benjamin; Khan,Ahmad A.; Al Shaikh,Ayad A.; Gelatos,Avgerinos V.; Umotoy,Salvador P., Apparatus for cyclical deposition of thin films.
  28. Kim Yong II,KRX ; Shin Joong Ho,KRX ; Yun Yeo Heung,KRX, Apparatus for deposition of thin films on wafers through atomic layer epitaxial process.
  29. Bondestam, Niklas; Kesala , Janne; Keto, Leif; Soininen, Pekka T., Apparatus for fabrication of thin films.
  30. Bondestam, Niklas; Kesala, Janne; Keto, Leif; Soininen, Pekka T., Apparatus for fabrication of thin films.
  31. Bondestam, Niklas; Kesälä, Janne; Keto, Leif; Soininen, Pekka T., Apparatus for fabrication of thin films.
  32. Soininen, Pekka T.; Kilpi, Vaino, Apparatus for growing thin films.
  33. Chen, Ling; Ku, Vincent W.; Chang, Mei; Wu, Dien Yeh; Chung, Hua, Apparatus for hybrid chemical processing.
  34. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Apparatus for integration of barrier layer and seed layer.
  35. Guenther,Rolf A., Apparatus for providing gas to a processing chamber.
  36. Li, Zilan; Kuah, Teng Hock; Ding, Jiapei; Raghavendra, Ravindra, Apparatus for thin-film deposition.
  37. Lam, Hyman W. H.; Zheng, Bo; Ai, Hua; Jackson, Michael; Yuan, Xiaoxiong; Wang, Hou Gong; Umotoy, Salvador P.; Yu, Sang Ho, Apparatuses and methods for atomic layer deposition.
  38. Lam, Hyman W. H.; Zheng, Bo; Ai, Hua; Jackson, Michael; Yuan, Xiaoxiong; Wang, Hougong; Umotoy, Salvador P.; Yu, Sang Ho, Apparatuses and methods for atomic layer deposition.
  39. Lam, Hyman W. H.; Zheng, Bo; Ai, Hua; Jackson, Michael; Yuan, Xiaoxiong; Wang, Hougong; Umotoy, Salvador P.; Yu, Sang Ho, Apparatuses and methods for atomic layer deposition.
  40. Lam, Hyman; Zheng, Bo; Ai, Hua; Jackson, Michael; Yuan, Xiaoxiong (John); Wang, Hou Gong; Umotoy, Salvador P.; Yu, Sang Ho, Apparatuses and methods for atomic layer deposition.
  41. Myo, Nyi Oo; Choi, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Apparatuses for atomic layer deposition.
  42. Van Wijck,Margreet Albertine Anne Marie, Atomic layer CVD.
  43. Van Wijck, Margreet Albertine Anne-Marie, Atomic layer deposition.
  44. Chin, Barry L.; Mak, Alfred W.; Lei, Lawrence C.; Xi, Ming; Chung, Hua; Lai, Ken Kaung; Byun, Jeong Soo, Atomic layer deposition apparatus.
  45. Chin, Barry L.; Mak, Alfred W.; Lei, Lawrence Chung-Lai; Xi, Ming; Chung, Hua; Lai, Ken Kaung; Byun, Jeong Soo, Atomic layer deposition apparatus.
  46. Chin, Barry L.; Mak, Alfred W.; Lei, Lawrence Chung-Lai; Xi, Ming; Chung, Hua; Lai, Ken Kaung; Byun, Jeong Soo, Atomic layer deposition apparatus.
  47. Chin, Barry L.; Mak, Alfred W.; Lei, Lawrence Chung-Lai; Xi, Ming; Chung, Hua; Lai, Ken Kaung; Byun, Jeong Soo, Atomic layer deposition apparatus.
  48. Chin, Barry L.; Mak, Alfred W.; Lei, Lawrence Chung-Lai; Xi, Ming; Chung, Hua; Lai, Ken Kaung; Byun, Jeong Soo, Atomic layer deposition apparatus.
  49. Chin,Barry L.; Mak,Alfred W.; Lei,Lawrence Chung Lai; Xi,Ming; Chung,Hua; Lai,Ken Kaung; Byun,Jeong Soo, Atomic layer deposition apparatus.
  50. Choi, Seung Woo; Park, Gwang Lae; Lee, Chun Soo; Lee, Jeong Ho; Choi, Young Seok, Atomic layer deposition apparatus.
  51. Choi, Seung Woo; Park, Gwang Lae; Lee, Chun Soo; Lee, Jeong Ho; Choi, Young Seok, Atomic layer deposition apparatus.
  52. Hwang, Chul-Ju; Shim, Kyung-Sik, Atomic layer deposition method.
  53. Hwang, Chul-Ju; Shim, Kyung-Sik, Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors.
  54. Mäntymäki, Miia; Ritala, Mikko; Leskelä, Markku, Atomic layer deposition of aluminum fluoride thin films.
  55. Chung, Hua; Wang, Rongjun; Maity, Nirmalya, Atomic layer deposition of barrier materials.
  56. Li, Dong; Marcus, Steven; Haukka, Suvi P.; Li, Wei-Min, Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds.
  57. Sandhu, Gurtej; Doan, Trung T., Atomic layer doping apparatus and method.
  58. Sandhu, Gurtej; Doan, Trung T., Atomic layer doping apparatus and method.
  59. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques.
  60. Wang, Feng; Lu, Victor Y.; Lu, Brian; Yau, Wai-Fan; Draeger, Nerissa; Gauri, Vishal; Humayun, Raashina; Danek, Michal; van Schravendijk, Bart; Nittala, Lakshminarayana, CVD flowable gap fill.
  61. Inagawa,Makoto; Hosokawa,Akihiro, Chamber for uniform substrate heating.
  62. Shang, Quanyuan; Kardokus, Janine; Hosokawa, Akihiro, Chamber for uniform substrate heating.
  63. Shang,Quanyuan; Kardokus,Janine; Hosokawa,Akihiro, Chamber for uniform substrate heating.
  64. Chen, Ling; Ku, Vincent W.; Chung, Hua; Marcadal, Christophe; Ganguli, Seshadri; Lin, Jenny; Wu, Dien Yeh; Ouye, Alan; Chang, Mei, Chemical precursor ampoule for vapor deposition processes.
  65. Cuvalci, Olkan; Wu, Dien-Yeh; Yuan, Xiaoxiong, Chemical precursor ampoule for vapor deposition processes.
  66. Lei, Lawrence C.; Mak, Alfred W.; Tzu, Gwo-Chuan; Tepman, Avi; Xi, Ming; Glenn, Walter Benjamin, Clamshell and small volume chamber with fixed substrate support.
  67. Lu, Jiang; Ha, Hyoung-Chan; Ma, Paul F.; Ganguli, Seshadri; Aubuchon, Joseph F.; Yu, Sang-ho; Narasimhan, Murali K., Cobalt deposition on barrier surfaces.
  68. Lu, Jiang; Ha, Hyoung-Chan; Ma, Paul; Ganguli, Seshadri; Aubuchon, Joseph F.; Yu, Sang Ho; Narasimhan, Murali K., Cobalt deposition on barrier surfaces.
  69. Sferlazzo, Piero, Continuous flow deposition system.
  70. Nguyen, Son T.; Sangam, Kedarnath; Schwartz, Miriam; Choi, Kenric; Bhat, Sanjay; Narwankar, Pravin K.; Kher, Shreyas; Sharangapani, Rahul; Muthukrishnan, Shankar; Deaton, Paul, Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system.
  71. Yearsley,Gyle D.; Nekl,Joshua J., Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character.
  72. Yang, Michael X.; Xi, Ming, Cyclical deposition of a variable content titanium silicon nitride layer.
  73. Wang, Shulin; Kroemer, Ulrich; Luo, Lee; Chen, Aihua; Li, Ming, Cyclical deposition of tungsten nitride for metal oxide gate electrode.
  74. Wang,Shulin; Kroemer,Ulrich; Luo,Lee; Chen,Aihua; Li,Ming, Cyclical deposition of tungsten nitride for metal oxide gate electrode.
  75. Derderian,Garo J.; Sandhu,Gurtej S., Deposition methods.
  76. Sandhu,Gurtej S.; Derderian,Garo J.; Blalock,Guy T.; Gilton,Terry L., Deposition methods and apparatuses providing surface activation.
  77. Yoon, Ki Hwan; Cha, Yonghwa Chris; Yu, Sang Ho; Ahmad, Hafiz Farooq; Wee, Ho Sun, Deposition methods for barrier and tungsten materials.
  78. Yoon,Ki Hwan; Cha,Yonghwa Chris; Yu,Sang Ho; Ahmad,Hafiz Farooq; Wee,Ho Sun, Deposition methods for barrier and tungsten materials.
  79. Law, Kam; Shang, Quanyuan; Harshbarger, William Reid; Maydan, Dan, Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications.
  80. Law,Kam; Shang,Quanyuan; Harshbarger,William Reid; Maydan,Dan, Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications.
  81. Blomberg, Tom E.; Anttila, Jaakko, Deposition of smooth metal nitride films.
  82. Blomberg, Tom E.; Anttila, Jaakko, Deposition of smooth metal nitride films.
  83. Elers, Kai-Erik; Haukka, Suvi P.; Saanila, Ville Antero; Kaipio, Sari Johanna; Soininen, Pekka Juha, Deposition of transition metal carbides.
  84. Kai-Erik Elers FI; Suvi P. Haukka FI; Ville Antero Saanila FI; Sari Johanna Kaipio FI; Pekka Juha Soininen FI, Deposition of transition metal carbides.
  85. Yoon, Hyungsuk A.; Fang, Hongbin; Yang, Michael X., Deposition of tungsten films.
  86. Grimbergen, Michael N., Dual endpoint detection for advanced phase shift and binary photomasks.
  87. Lei, Lawrence C.; Kori, Moris, Dual robot processing system.
  88. Grimbergen, Michael, Endpoint detection for photomask etching.
  89. Grimbergen, Michael, Endpoint detection for photomask etching.
  90. Rahtu, Antti; Tois, Eva; Elers, Kai-Erik; Li, Wei-Min, Enhanced thin film deposition.
  91. Rahtu, Antti; Tois, Eva; Elers, Kai-Erik; Li, Wei-Min, Enhanced thin film deposition.
  92. Rahtu, Antti; Tois, Eva; Elers, Kai-Erik; Li, Wei-Min, Enhanced thin film deposition.
  93. Chen,Ling; Chang,Mei, Enhancement of copper line reliability using thin ALD tan film to cap the copper line.
  94. Grimbergen, Michael, Etch rate detection for anti-reflective coating layer and absorber layer etching.
  95. Grimbergen, Michael N., Etch rate detection for photomask etching.
  96. Grimbergen, Michael, Etch rate detection for reflective multi-material layers etching.
  97. Brondum, Klaus; Welty, Richard P.; Jonte, Patrick B.; Richmond, Douglas S.; Thomas, Kurt, Faucet.
  98. Brondum, Klaus; Welty, Richard P.; Jonte, Patrick B.; Richmond, Douglas S., Faucet component with coating.
  99. Brondum, Klaus; Welty, Richard P.; Jonte, Patrick B.; Richmond, Douglas S., Faucet component with coating.
  100. Brondum, Klaus; Welty, Richard P.; Jonte, Patrick B.; Richmond, Douglas S., Faucet component with coating.
  101. Brondum, Klaus, Faucet with wear-resistant valve component.
  102. Kato, Hitoshi; Honma, Manabu, Film deposition apparatus.
  103. Kato, Hitoshi; Honma, Manabu; Orito, Kohichi, Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method.
  104. Honma, Manabu, Film deposition apparatus, substrate processing apparatus, film deposition method, and storage medium.
  105. Matsuse, Kimihiro, Film forming apparatus and film forming method.
  106. Gauri, Vishal; Humayun, Raashina; Lang, Chi-I; Huang, Judy H.; Barnes, Michael; Shanker, Sunil, Flowable film dielectric gap fill process.
  107. Mui, Collin K. L.; Nittala, Lakshminarayana; Draeger, Nerissa, Flowable oxide deposition using rapid delivery of process gases.
  108. Draeger, Nerissa; Shannon, Karena; van Schravendijk, Bart; Ashtiani, Kaihan, Flowable oxide film with tunable wet etch rate.
  109. Draeger, Nerissa; Shannon, Karena; van Schravendijk, Bart; Ashtiani, Kaihan, Flowable oxide film with tunable wet etch rate.
  110. Suzuki, Toshiya; Pore, Viljami J., Formation of SiOCN thin films.
  111. Suzuki, Toshiya; Pore, Viljami J., Formation of SiOCN thin films.
  112. Narwankar, Pravin K.; Higashi, Gregg, Formation of a silicon oxynitride layer on a high-k dielectric material.
  113. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  114. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  115. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  116. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  117. Seutter,Sean M.; Yang,Michael X.; Xi,Ming, Formation of a tantalum-nitride layer.
  118. Byun, Jeong Soo; Mak, Alfred, Formation of boride barrier layers using chemisorption techniques.
  119. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
  120. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
  121. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
  122. Fukazawa, Atsuki, Formation of silicon-containing thin films.
  123. Sneh, Ofer; Seidel, Thomas E., Fully integrated process for MIM capacitors using atomic layer deposition.
  124. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus and method for atomic layer deposition.
  125. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus and method for atomic layer deposition.
  126. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus for atomic layer deposition.
  127. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman; Chang, Mei, Gas delivery apparatus for atomic layer deposition.
  128. Yudovsky, Joseph, Gas distribution system for cyclical layer deposition.
  129. Chung,Hua; Maity,Nirmalya; Yu,Jick; Mosely,Roderick Craig; Chang,Mei, Integration of ALD tantalum nitride for copper metallization.
  130. Chung, Hua; Chen, Ling; Yu, Jick; Chang, Mei, Integration of barrier layer and seed layer.
  131. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Integration of barrier layer and seed layer.
  132. Sneh, Ofer, Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition.
  133. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Integration of titanium and titanium nitride layers.
  134. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Integration of titanium and titanium nitride layers.
  135. Nguyen, Khiem K.; Satitpunwaycha, Peter; Mak, Alfred W., Interferometer endpoint monitoring device.
  136. Nguyen, Anh N.; Yang, Michael X.; Xi, Ming; Chung, Hua; Chang, Anzhong; Yuan, Xiaoxiong; Lu, Siqing, Lid assembly for a processing system to facilitate sequential deposition techniques.
  137. Tzu, Gwo-Chuan; Umotoy, Salvador P., Lid assembly for a processing system to facilitate sequential deposition techniques.
  138. Tzu, Gwo-Chuan; Umotoy, Salvador P., Lid assembly for a processing system to facilitate sequential deposition techniques.
  139. Van Cleemput, Patrick A.; Ndiege, Nicholas Muga; Mohn, Jonathan D., Low k dielectric deposition via UV driven photopolymerization.
  140. Mercaldi,Garry A., Low selectivity deposition methods.
  141. Ndiege, Nicholas Muga; Nittala, Krishna; Wong, Derek B.; Antonelli, George Andrew; Draeger, Nerissa Sue; Van Cleemput, Patrick A., Low-K oxide deposition by hydrolysis and condensation.
  142. Yudovsky,Joseph, Membrane gas valve for pulsing a gas.
  143. Elers,Kai; Li,Wei Min, Metal nitride carbide deposition by ALD.
  144. Elers,Kai; Li,Wei Min, Metal nitride deposition by ALD with reduction pulse.
  145. Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer.
  146. Strang, Eric J., Method and apparatus for gas injection system with minimum particulate contamination.
  147. Ku, Vincent W.; Chen, Ling; Wu, Dien-Yeh; Ouye, Alan H.; Wysok, Irena, Method and apparatus for gas temperature control in a semiconductor processing system.
  148. Guenther, Rolf A., Method and apparatus for generating gas to a processing chamber.
  149. Ganguli, Seshadri; Ku, Vincent W.; Chung, Hua; Chen, Ling, Method and apparatus for monitoring solid precursor delivery.
  150. Ganguli, Seshadri; Chen, Ling; Ku, Vincent W., Method and apparatus for providing precursor gas to a processing chamber.
  151. Ganguli,Seshadri; Chen,Ling; Ku,Vincent W., Method and apparatus for providing precursor gas to a processing chamber.
  152. Chen,Ling; Ku,Vincent W.; Chung,Hua; Marcadal,Christophe; Ganguli,Seshadri; Lin,Jenny; Wu,Dien Yeh; Ouye,Alan; Chang,Mei, Method and apparatus of generating PDMAT precursor.
  153. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method and system for controlling the presence of fluorine in refractory metal layers.
  154. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method and system for controlling the presence of fluorine in refractory metal layers.
  155. Sinha,Ashok; Xi,Ming; Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua, Method and system for controlling the presence of fluorine in refractory metal layers.
  156. Yu, Keven; Chandrachood, Madhavi; Sabharwal, Amitabh; Kumar, Ajay, Method for etching EUV material layers utilized to form a photomask.
  157. Leinikka,Miika; Kostamo,Juhana J. T., Method for fabricating a seed layer.
  158. Chua, Thai Cheng; Muthukrisnan, Shankar; Swenberg, Johanes; Kher, Shreyas; Wang, Chikuang Charles; Conti, Giuseppina; Uritsky, Yuri, Method for fabricating an integrated gate dielectric layer for field effect transistors.
  159. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method for forming tungsten materials during vapor deposition processes.
  160. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Method for forming tungsten materials during vapor deposition processes.
  161. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.
  162. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.
  163. Chen, Ling; Cao, Wei, Method for growing thin films by catalytic enhancement.
  164. Metzner, Craig; Kher, Shreyas; Kim, Yeong Kwan; Rocklein, M. Noel; George, Steven M., Method for hafnium nitride deposition.
  165. Kato, Hitoshi; Sato, Jun; Murata, Masahiro; Oshimo, Kentaro; Sugano, Tomoko; Miura, Shigehiro, Method for processing a substrate and substrate processing apparatus.
  166. Kato, Hitoshi; Sato, Jun; Murata, Masahiro; Oshimo, Kentaro; Sugano, Tomoko; Miura, Shigehiro, Method for processing a substrate and substrate processing apparatus.
  167. Ganguli, Seshadri; Chen, Ling; Ku, Vincent W., Method for providing gas to a processing chamber.
  168. Draeger, Nerissa Sue; Ashtiani, Kaihan Abidi; Padhi, Deenesh; Wong, Derek B.; van Schravendijk, Bart J.; Antonelli, George Andrew; Kolics, Artur; Zhao, Lie; van Cleemput, Patrick A., Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor.
  169. Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E., Method for the protection of extreme ultraviolet lithography optics.
  170. Doan,Trung Tri; Breiner,Lyle D.; Ping,Er Xuan; Zheng,Lingyi A., Method of atomic layer deposition on plural semiconductor substrates simultaneously.
  171. Verplancken, Donald J.; Sinha, Ashok K., Method of delivering activated species for rapid cyclical deposition.
  172. Lamouroux, Franck; Bertrand, Sébastien; Goujard, Stéphane; Caillaud, Alain; Bagilet, Francis; Mazereau, Stéphane, Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates.
  173. Lamouroux, Franck; Bertrand, Sébastien; Goujard, Stéphane; Caillaud, Alain; Bagilet, Francis; Mazereau, Stéphane, Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates.
  174. Welty,Richard P.; Brondum,Klaus; Richmond,Douglas S.; Jonte,Patrick B., Method of forming a wear resistant component.
  175. Anton, Bryce; Welty, Richard P.; Sullivan, Patrick, Method of producing an article having patterned decorative coating.
  176. Tomasini,Pierre; Cody,Nyles; Arena,Chantal, Method to planarize and reduce defect density of silicon germanium.
  177. Myo, Nyi Oo; Cho, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Methods for atomic layer deposition of hafnium-containing high-K dielectric materials.
  178. Lai, Ken Kaung; Rajagopalan, Ravi; Khandelwal, Amit; Moorthy, Madhu; Gandikota, Srinivas; Castro, Joseph; Gelatos, Avgerinos V.; Knepfler, Cheryl; Jian, Ping; Fang, Hongbin; Huang, Chao-Ming; Xi, Ming; Yang, Michael X.; Chung, Hua; Byun, Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.
  179. Lai,Ken Kaung; Rajagopalan,Ravi; Khandelwal,Amit; Moorthy,Madhu; Gandikota,Srinivas; Castro,Joseph; Gelatos,Averginos V.; Knepfler,Cheryl; Jian,Ping; Fang,Hongbin; Huang,Chao Ming; Xi,Ming; Yang,Michael X.; Chung,Hua; Byun,Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.
  180. Grimbergen, Michael N., Methods for reducing photoresist interference when monitoring a target layer in a plasma process.
  181. Doan, Trung Tri; Breiner, Lyle D.; Ping, Er-Xuan; Zheng, Lingyi A., Methods for treating pluralities of discrete semiconductor substrates.
  182. Doan,Trung Tri; Breiner,Lyle D.; Ping,Er Xuan; Zheng,Lingyi A., Methods for treating pluralities of discrete semiconductor substrates.
  183. Doan,Trung Tri; Breiner,Lyle D.; Ping,Er Xuan; Zheng,Lingyi A., Methods for treating pluralities of discrete semiconductor substrates.
  184. Doan,Trung Tri; Breiner,Lyle D.; Ping,Er Xuan; Zheng,Lingyi A., Methods for treating semiconductor substrates.
  185. Kim, Jong Su; Park, Hyung Sang; Yoo, Yong Min; Kwon, Hak Yong; Yoon, Tae Ho, Methods of forming an amorphous silicon thin film.
  186. Yang, Michael Xi; Yoon, Hyungsuk Alexander; Zhang, Hui; Fang, Hongbin; Xi, Ming, Multiple precursor cyclical deposition system.
  187. Milligan, Robert B., Periodic plasma annealing in an ALD-type process.
  188. Blomberg, Tom E.; Huotari, Hannu, Photoactive devices and materials.
  189. Mahajani, Maitreyee; Yudovsky, Joseph; McDougall, Brendan, Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool.
  190. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.
  191. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.
  192. Elers, Kai-Erik; Wilk, Glen; Marcus, Steven, Plasma-enhanced deposition of metal carbide films.
  193. Raisanen, Petri; Marcus, Steven, Plasma-enhanced deposition process for forming a metal oxide thin film and related structures.
  194. Li, Dong; Marcus, Steven; Wilk, Glen; Milligan, Brennan, Plasma-enhanced pulsed deposition of metal carbide films.
  195. Danek, Michal; van Schravendijk, Bart; Draeger, Nerissa; Nittala, Lakshminarayana, Premetal dielectric integration process.
  196. Mahajani, Maitreyee, Pretreatment processes within a batch ALD reactor.
  197. Mahajani,Maitreyee, Pretreatment processes within a batch ALD reactor.
  198. Fairbairn Kevin ; Ponnekanti Hari K., Process chamber exhaust system.
  199. Ganguli, Seshadri; Yu, Sang-Ho; Phan, See-Eng; Chang, Mei; Khandelwal, Amit; Ha, Hyoung-Chan, Process for forming cobalt and cobalt silicide materials in tungsten contact applications.
  200. Ganguli, Seshadri; Yu, Sang-Ho; Phan, See-Eng; Chang, Mei; Khandelwal, Amit; Ha, Hyoung-Chan, Process for forming cobalt and cobalt silicide materials in tungsten contact applications.
  201. Ganguli, Seshadri; Chu, Schubert S.; Chang, Mei; Yu, Sang-Ho; Moraes, Kevin; Phan, See-Eng, Process for forming cobalt-containing materials.
  202. Girard, Jean-Marc; Kimura, Takako, Process gas supply mechanism for ALCVD systems.
  203. Ku,Vincent; Chen,Ling; Grunes,Howard; Chung,Hua, Processing chamber configured for uniform gas flow.
  204. Elers,Kai Erik; Saanila,Ville Antero; Kaipio,Sari Johanna; Soininen,Pekka Juha, Production of elemental films using a boron-containing reducing agent.
  205. Elers,Kai Erik; Saanila,Ville Antero; Kaipio,Sari Johanna; Soininen,Pekka Juha, Production of elemental films using a boron-containing reducing agent.
  206. Kai-Erik Elers FI; Ville Antero Saanila FI; Sari Johanna Kaipio FI; Pekka Juha Soininen FI, Production of elemental thin films using a boron-containing reducing agent.
  207. Cheng, Huiming; Liu, Chang; Cong, Hongtao; Liu, Min; Fan, Yueying; Su, Ge, Production of single-walled carbon nanotubes by a hydrogen arc discharge method.
  208. Lu, Xinliang; Jian, Ping; Yoo, Jong Hyun; Lai, Ken Kaung; Mak, Alfred W.; Jackson, Robert L.; Xi, Ming, Pulsed deposition process for tungsten nucleation.
  209. Clark, William R., Pulsed mass flow delivery system and method.
  210. Shajii, Ali; Nagarkatti, Siddharth P.; Besen, Matthew Mark; Clark, William R.; Smith, Daniel Alexander; Akgerman, Bora, Pulsed mass flow delivery system and method.
  211. Shajii, Ali; Nagarkatti, Siddharth P.; Besen, Matthew Mark; Clark, William R.; Smith, Daniel Alexander; Akgerman, Bora, Pulsed mass flow delivery system and method.
  212. Shajii, Ali; Nagarkatti, Siddharth P.; Besen, Matthew Mark; Clark, William R.; Smith, Daniel Alexander; Akgerman, Bora, Pulsed mass flow delivery system and method.
  213. Lu,Xinliang; Jian,Ping; Yoo,Jong Hyun; Lai,Ken Kaung; Mak,Alfred W.; Jackson,Robert L.; Xi,Ming, Pulsed nucleation deposition of tungsten layers.
  214. Dickey, Eric R.; Barrow, William A., Radical-enhanced atomic layer deposition system and method.
  215. Yudovsky, Joseph, Rotary gas valve for pulsing a gas.
  216. Arthur Sherman, Sequential chemical vapor deposition.
  217. Sherman, Arthur, Sequential chemical vapor deposition.
  218. Sherman, Arthur, Sequential chemical vapor deposition.
  219. Sherman, Arthur, Sequential chemical vapor deposition.
  220. Sherman, Arthur, Sequential chemical vapor deposition.
  221. Sherman,Arthur, Sequential chemical vapor deposition.
  222. Cao, Wei; Chung, Hua; Ku, Vincent W.; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  223. Cao, Wei; Chung, Hua; Ku, Vincent; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  224. Cao, Wei; Chung, Hua; Ku, Vincent; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  225. Arena,Chantal J.; Tomasini,Pierre; Cody,Nyles W., SiGe rectification process.
  226. Chen, Jerry; Machkaoutsan, Vladimir; Milligan, Brennan; Maes, Jan Willem; Haukka, Suvi; Shero, Eric; Blomberg, Tom E.; Li, Dong, Silane and borane treatments for titanium carbide films.
  227. Chen, Jerry; Machkaoutsan, Vladimir; Milligan, Brennan; Maes, Jan; Haukka, Suvi; Shero, Eric; Blomberg, Tom; Li, Dong, Silane and borane treatments for titanium carbide films.
  228. Chen, Jerry; Machkaoutsan, Vladimir; Milligan, Brennan; Maes, Jan; Haukka, Suvi; Shero, Eric; Blomberg, Tom; Li, Dong, Silane and borane treatments for titanium carbide films.
  229. Shero, Eric; Haukka, Suvi, Silane or borane treatment of metal thin films.
  230. Shero, Eric; Haukka, Suvi, Silane or borane treatment of metal thin films.
  231. Glenn, W. Benjamin; Verplancken, Donald J., Simultaneous cyclical deposition in different processing regions.
  232. Olsen, Christopher; Narwankar, Pravin K.; Kher, Shreyas S.; Thakur, Randhir; Muthukrishnan, Shankar; Kraus, Philip A., Stabilization of high-k dielectric materials.
  233. Ohizumi, Yukio; Honma, Manabu, Substrate processing apparatus.
  234. Honma, Manabu, Substrate processing apparatus having a pillar support structure for preventing transformation of a ceiling portion.
  235. Schieve, Eric W.; Koai, Keith K.; Or, David T.; Correa, Rene T., Substrate support lift mechanism.
  236. Mohn, Jonathan D.; te Nijenhuis, Harald; Hamilton, Shawn M.; Madrigal, Kevin; Lingampalli, Ramkishan Rao, System and apparatus for flowable deposition in semiconductor fabrication.
  237. Xi, Ming; Yang, Michael; Zhang, Hui, System and method for forming an integrated barrier layer.
  238. Mak, Alfred W.; Chang, Mei; Byun, Jeong Soo; Chung, Hua; Sinha, Ashok; Kori, Moris, System and method to form a composite film stack utilizing sequential deposition techniques.
  239. Nishikawa Kazuyasu,JPX ; Tomohisa Shingo,JPX, System for manufacturing a semiconductor device.
  240. Fairbairn, Kevin; Barzilai, Jessica; Ponnekanti, Hari K.; Taylor, W. N. (Nick), Tandem process chamber.
  241. Gelatos, Avgerinos V.; Lee, Sang-Hyeob; Yuan, Xiaoxiong; Umotoy, Salvador P.; Chang, Yu; Tzu, Gwo-Chuan; Renuart, Emily; Lin, Jing; Lai, Wing-Cheong; Le, Sang Q., Temperature controlled lid assembly for tungsten nitride deposition.
  242. Koh,Won Yong; Lee,Chun soo, Thin film forming method.
  243. Koh,Won yong; Lee,Chun soo, Thin film forming method.
  244. Spaulding, Kyle; Rogers, James, Time varying segmented pressure control.
  245. Haukka, Suvi; Givens, Michael; Shero, Eric; Winkler, Jerry; Räisänen, Petri; Asikainen, Timo; Zhu, Chiyu; Anttila, Jaakko, Titanium aluminum and tantalum aluminum thin films.
  246. Kim, Gi Youl; Srivastava, Anuranjan; Seidel, Thomas E.; Londergan, Ana R.; Ramanathan, Sasangan, Transient enhanced atomic layer deposition.
  247. Reilly, Patrick; te Nijenhuis, Harald; Draeger, Nerissa; van Schravendijk, Bart J.; Ndiege, Nicholas Muga, Treatment for flowable dielectric deposition on substrate surfaces.
  248. Wang, Shulin; Kroemer, Ulrich; Luo, Lee; Chen, Aihua; Li, Ming, Tungsten nitride atomic layer deposition processes.
  249. Wang,Shulin; Kroemer,Ulrich; Luo,Lee; Chen,Aihua; Li,Ming, Tungsten nitride atomic layer deposition processes.
  250. Brondum, Klaus; Welty, Richard P.; Richmond, Douglas S.; Jonte, Patrick B.; Thomas, Kurt, Valve component for faucet.
  251. Brondum, Klaus; Welty, Richard P.; Richmond, Douglas S.; Jonte, Patrick B.; Thomas, Kurt, Valve component for faucet.
  252. Welty,Richard P.; Brondum,Klaus; Richmond,Douglas S.; Jonte,Patrick B., Valve component with improved wear resistance.
  253. Welty, Richard P.; Brondum, Klaus; Richmond, Douglas S.; Jonte, Patrick B., Valve component with multiple surface layers.
  254. Lu, Siqing; Chang, Yu; Sun, Dongxi; Dang, Vinh; Yang, Michael X.; Chang, Anzhong; Nguyen, Anh N.; Xi, Ming, Valve control system for atomic layer deposition chamber.
  255. Lu,Siqing; Chang,Yu; Sun,Dongxi; Dang,Vinh; Yang,Michael X.; Chang,Anzhong (Andrew); Nguyen,Anh N.; Xi,Ming, Valve control system for atomic layer deposition chamber.
  256. Ku,Vincent W.; Chen,Ling; Wu,Dien Yeh, Valve design and configuration for fast delivery system.
  257. Ku,Vincent W.; Chen,Ling; Wu,Dien Yeh, Valve design and configuration for fast delivery system.
  258. Elers, Kai Erik, Vapor deposition of metal carbide films.
  259. Lee, Sang-Hyeob; Gelatos, Avgerinos V.; Wu, Kai; Khandelwal, Amit; Marshall, Ross; Renuart, Emily; Lai, Wing-Cheong Gilbert; Lin, Jing, Vapor deposition of tungsten materials.
  260. Ishizumi Takashi,JPX ; Kaneiwa Shinji,JPX, Vapor growth apparatus and vapor growth method capable of growing good productivity.
  261. Doan,Trung Tri, Variable temperature deposition methods.
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