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Thin film field effect element having an LDD structure 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/76
  • H01L-029/94
  • H01L-027/01
  • H01L-031/062
출원번호 US-0911582 (1992-07-10)
우선권정보 JP-0199717 (1991-08-09)
발명자 / 주소
  • Inoue Yasuo (Hyogo JPX) Nishimura Tadashi (Hyogo JPX) Ashida Motoi (Hyogo JPX)
출원인 / 주소
  • Mitsubishi Denki Kabushiki Kaisha (Tokyo JPX 03)
인용정보 피인용 횟수 : 47  인용 특허 : 0

초록

An upper insulating layer is formed on an upper surface of a gate electrode formed on an insulating substrate. A gate insulating layer is formed on sidewalls of the gate electrode and the surfaces of the upper insulating layer. A semiconductor layer is formed on the surfaces of the gate insulating l

대표청구항

A thin film field effect element, comprising: a gate electrode formed on a surface of an insulating base layer a gate insulating layer formed on said surface of the insulating base layer and surfaces of said gate electrode; a semiconductor layer formed on surfaces of said gate insulating layer; a ch

이 특허를 인용한 특허 (47)

  1. Kim, Sung-Min; Yun, Eun-Jung; Kim, Dong-Won; Yoon, Jae-Man, 3-Dimensional flash memory device and method of fabricating the same.
  2. Kim,Sung Min; Yun,Eun Jung; Kim,Dong Won; Yoon,Jae Man, 3-Dimensional flash memory device and method of fabricating the same.
  3. Parekh Kunal R., Bitline contact structures and DRAM array structures.
  4. Cho Seok Won,KRX, Bottom-gated cylindrical-shaped thin film transistor having a peripheral offset spacer.
  5. Parekh Kunal R. ; Zahurak John K., Capacitor structures, DRAM cell structures, and integrated circuitry.
  6. Kunal R. Parekh ; John K. Zahurak, Capacitor structures, DRAM cell structures, and integrated circuitry, and methods of forming capacitor structures, integrated circuitry and DRAM cell structures.
  7. Parekh Kunal R. ; Zahurak John K., Capacitor structures, DRAM cell structures, and integrated circuitry, and methods of forming capacitor structures, integrated circuitry and DRAM cell structures.
  8. Parekh,Kunal R.; Zahurak,John K., Capacitor structures, DRAM cell structures, and integrated circuitry, and methods of forming capacitor structures, integrated circuitry and DRAM cell structures.
  9. Liu Yauh-Ching ; Kao David Y., Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrate.
  10. Liu Yauh-Ching ; Kao David Y., Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures.
  11. Liu Yauh-Ching ; Kao David Y., Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures.
  12. Parekh Kunal R. ; Zahurak John K., Capacitor structures, DRAM cells and integrated circuitry.
  13. Parekh Kunal R., Conductive electrical contacts, capacitors, DRAMs, and integrated circuitry, and methods of forming conductive electrical contacts, capacitors, DRAMs and integrated circuitry.
  14. Parekh Kunal R., Conductive electrical contacts, capacitors, DRAMs, and integrated circuitry, and methods of forming conductive electrical contacts, capacitors, DRAMs, and integrated circuitry.
  15. Kunal R. Parekh ; John K. Zahurak, DRAM cells and integrated circuitry, and capacitor structures.
  16. Chan Tsiu C. ; Han Yu-Pin ; Guritz Elmer H., Field effect device with polycrystalline silicon channel.
  17. Parekh Kunal R. ; Parekh Angela S., Integrated circuitry, DRAM cells, capacitors, and methods of forming integrated circuitry, DRAM cells and capacitors.
  18. Chan Tsiu Chiu ; Han Yu-Pin ; Guritz Elmer H. ; Blanchard Richard A., Inverted field-effect device with polycrystalline silicon/germanium channel.
  19. Lin Horng-Chih (Hsinchu TWX) Chen Liang-Po (Hsinchu TWX) Lin Hsiao-Yi (Hualien Hsien TWX) Chang Chun-Yen (Hsinchu TWX), Method for fabricating thin-film transistor with bottom-gate or dual-gate configuration.
  20. Yamazaki, Shunpei; Koyama, Jun, Method for manufacturing an electrooptical device.
  21. Choi Jong Moon,KRX ; Kim Jong Kwan,KRX, Method of making a thin film transistor.
  22. Kunal R. Parekh ; John K. Zahurak, Methods of forming a capacitor and methods of forming a monolithic integrated circuit.
  23. Parekh, Kunal R.; Zahurak, John K., Methods of forming capacitor structures and DRAM arrays.
  24. Parekh Kunal R. ; Zahurak John K., Methods of forming capacitors and DRAM arrays.
  25. Parekh Kunal R. ; Zahurak John K., Methods of forming capacitors and DRAM arrays.
  26. Liu Yauh-Ching ; Kao David Y., Methods of forming capacitors methods of forming DRAM cells, and integrated circuits incorporating structures and DRAM cell structures.
  27. Parekh Kunal R. ; Zahurak John K., Methods of forming capacitors structures and DRAM cells.
  28. Parekh Kunal R. ; Parekh Angela S., Methods of forming integrated circuitry, DRAM cells and capacitors.
  29. Manning, Monte, Methods of forming thin film transistors.
  30. Liu, Zheng; Long, Chunping; Chan, Yu-Cheng; Lu, Xiaoyong; Li, Xialong, Polycrystalline silicon thin-film transistor.
  31. Zhang Jiong,SGX ; Shao Kai,SGX ; Chu Shao-Fu Sanford,SGX, Process to control the lateral doping profile of an implanted channel region.
  32. Chan Tsiu Chiu ; Bryant Frank Randolph, SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers.
  33. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  34. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  36. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  37. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  38. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device comprising a pixel unit including an auxiliary capacitor.
  39. Ino Masumitsu,JPX ; Maekawa Toshikazu,JPX ; Tashiro Yuki,JPX ; Shimogaichi Yasushi,JPX ; Morita Shintaro,JPX, Semiconductor device for driving a substrate of an electro-optical device.
  40. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device having a gate wiring comprising laminated wirings.
  41. Balasinski, Artur P.; Huang, Kuei-Wu, Spacer-type thin-film polysilicon transistor for low-power memory devices.
  42. Krivokapic, Zoran, Straddled gate FDSOI device.
  43. Manning, Monte, Thin film transistor.
  44. Seok Won Cho KR, Thin film transistor and method for fabricating the same.
  45. Manning Monte, Thin film transistors.
  46. Manning Monte, Thin film transistors.
  47. Nelson, Shelby F.; Tutt, Lee W., Vertical transistor having reduced parasitic capacitance.
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