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Detection of interfaces with atomic resolution during material processing by optical second harmonic generation 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0000903 (1993-01-06)
발명자 / 주소
  • Heinz Tony F. (Chappaqua NY) Selwyn Gary S. (Hopewell Junction NY) Singh Syothi (Hopewell Junction NY) Spinetti
  • Jr. John A. (Endicott NY)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 43  인용 특허 : 0

초록

A technique for observing optical second harmonic generation effect at a surface of a material during processing thereof, particularly in the presence of a plasma, for controlling the processing of the material. A preferred form of the apparatus and method includes a combination of spectral, spatial

대표청구항

A method of observing the surface of a material during processing of the material in the presence without control or limitation of ambient radiation produced by said processing, said method including the steps of directing coherent radiation of a first frequency toward said surface of said material,

이 특허를 인용한 특허 (43)

  1. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  2. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  3. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  4. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
  5. Le Roy, Erwan; Tsao, Chun-Cheng; Lundquist, Theodore R.; Jain, Rajesh Kumar, Apparatus and method for optical interference fringe based integrated circuit processing.
  6. Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.
  7. Brownell, Michael, Apparatus, system and method for precision depth measurement.
  8. Brownell, Michael, Apparatus, system and method for precision depth measurement.
  9. Hunt, Jeffrey H., Broadband infrared spectral surface spectroscopy.
  10. McAndrew James ; Wang Hwa-Chi ; Jurcik ; Jr. Benjamin J., Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement s.
  11. James McAndrew ; Hwa-Chi Wang ; Benjamin J. Jurcik, Jr., Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement system, and methods of use.
  12. McAndrew James ; Wang Hwa-Chi ; Jurcik ; Jr. Benjamin J., Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement system, and methods of use.
  13. Wang, Haiming; Lee, Shing; Nikoonahad, Mehrdad, Detection of film thickness through induced acoustic pulse-echos.
  14. Jean-Pierre Briand FR, Device and method for ion beam etching using space-time detection.
  15. Hunt,Jeffrey H., Difference-frequency surface spectroscopy.
  16. Zhang, Jimin; Lee, Harry Q.; Wang, Zhihong; Tu, Wen-Chiang, Endpoint detection during polishing using integrated differential intensity.
  17. Hunt, Jeffrey H., Femtosecond optical surface imaging.
  18. Hunt, Jeffrey H., Fiber-optic based surface spectroscopy.
  19. Piwonka-Corle, Timothy R.; Scoffone, Karen F.; Chen, Xing; Lacomb, Jr., Lloyd J.; Stehle, Jean-Louis; Zahorski, Dorian; Rey, John-Pierre, Focused beam spectroscopic ellipsometry method and system.
  20. Inman Ronald S. ; McAndrew James J. F., In-line cell for absorption spectroscopy.
  21. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  22. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  23. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  24. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  25. Zhou, Wang Long; Yang, Yongwu; Sapirstein, Victor S.; Peng, Shaoqing, Laser-induced breakdown spectroscopy with second harmonic guide light.
  26. Agarwal Vishnu K., Method and apparatus for endpointing a chemical-mechanical planarization process.
  27. Agarwal, Vishnu K., Method and apparatus for endpointing a chemical-mechanical planarization process.
  28. Agarwal, Vishnu K., Method and apparatus for endpointing a chemical-mechanical planarization process.
  29. Agarwal, Vishnu K., Method and apparatus for endpointing a chemical-mechanical planarization process.
  30. Buie, Melisa J.; Poslavsky, Leonid; Lewis, Jennifer, Method and apparatus for measuring etch uniformity of a semiconductor wafer.
  31. Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  32. Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  33. McAndrew James ; Inman Ronald S., Method and system for sensitive detection of molecular species in a vacuum by harmonic detection spectroscopy.
  34. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
  35. Hunt Jeffrey H., Method of monitoring a thin film of polyimide material using surface spectroscopy.
  36. Hunt, Jeffrey H., Microwave regime surface spectroscopy.
  37. Nikoonahad Mehrdad ; Lee Shing ; Wang Haiming, Non-contact system for measuring film thickness.
  38. Hunt, Jeffrey H., Nonlinear optical system for sensing the presence of contamination on a semiconductor wafer.
  39. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.
  40. Inman Ronald S. ; McAndrew James, Polygonal planar multipass cell, system and apparatus including same, and method of use.
  41. Radens Carl J. ; Fairchok Cynthia A., Selective oxide-to-nitride etch process using C.sub.4 F.sub.8 /CO/Ar.
  42. Jean-Marc Girard FR; Benjamin J. Jurcik FR; Jean Friedt FR; James J. F. McAndrew, Semiconductor processing system and method for controlling moisture level therein.
  43. Hunt, Jeffrey H., System and method for imaging contamination on a surface.
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