Process for purification of rare gas
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0956619
(1992-10-05)
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우선권정보 |
JP-0242586 (1990-09-14); JP-0325484 (1990-11-29); JP-0210523 (1991-05-17) |
발명자
/ 주소 |
- Kitahara Koichi (Hiratsuka JPX) Ohtsuka Kenji (Hiratsuka JPX) Takemasa Noboru (Hiratsuka JPX) Kamiyama Shinobu (Hiratsuka JPX)
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출원인 / 주소 |
- Japan Pionics Co., Ltd. (Tokyo JPX 03)
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인용정보 |
피인용 횟수 :
5 인용 특허 :
0 |
초록
▼
Highly purified rare gas (helium, neon, argon, krypton, xenon, etc.) is obtained by removing impurities contained therein, such as nitrogen, hydrocarbon, carbon monoxide, carbon dioxide, oxygen, hydrogen and water, at relatively low temperatures by the use of a getter. This getter is a two-component
Highly purified rare gas (helium, neon, argon, krypton, xenon, etc.) is obtained by removing impurities contained therein, such as nitrogen, hydrocarbon, carbon monoxide, carbon dioxide, oxygen, hydrogen and water, at relatively low temperatures by the use of a getter. This getter is a two-component alloy of zirconium and vanadium, or a multi-component alloy containing, as well as zirconium and vanadium, at least one of chromium, nickel and cobalt.
대표청구항
▼
A process for purifying a rare gas containing impurities which comprises contacting the rare gas at a temperature of 350°C. to 700°C. with an alloy getter selected from the group consisting of (a) an alloy consisting essentially of vanadium, zirconium and chromium and (b) an alloy consisting essenti
A process for purifying a rare gas containing impurities which comprises contacting the rare gas at a temperature of 350°C. to 700°C. with an alloy getter selected from the group consisting of (a) an alloy consisting essentially of vanadium, zirconium and chromium and (b) an alloy consisting essentially of vanadium, zirconium, chromium and cobalt, said chromium in said alloy (a) or the total of said chromium and cobalt in said alloy (b) being in an amount of 0.5 to 20 parts by weight per 100 parts based on the total weight of the vanadium and the zirconium, said vanadium being in an amount of 5 to 90% by weight based on the weight of the vanadium and the zirconium, to remove at least one of nitrogen, hydrocarbons, carbon monoxide, carbon dioxide, oxygen, hydrogen and water, as impurities contained in the rare gas.
이 특허를 인용한 특허 (5)
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Tokai,Akira; Yamada,Hitoshi; Ishimoto,Manabu; Shinoda,Tsutae, DISPLAY DEVICE EMPLOYING GAS DISCHARGE TUBES ARRANGED IN PARALLEL BETWEEN FRONT AND REAR SUBSTRATES TO COMPRISE A DISPLAY SCREEN, EACH TUBE HAVING A LIGHT EMITTING SECTION AS PART OF THE DISPLAY SCRE.
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van der Maas, Marinus Frans, In-line filter with quick-change coupling and a filter.
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Applegarth Charles H., Integrated heated getter purifier system.
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Boffito Claudio,ITX ; Corazza Alessio,ITX ; Tominetti Stefano,ITX, Nonevaporable getter alloys.
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Weber, Daniel K.; Vergani, Giorgio, Rejuvenable ambient temperature purifier.
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