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Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/01
  • H01L-027/12
  • H01L-029/76
출원번호 US-0773162 (1991-10-08)
우선권정보 JP-0271262 (1990-10-09); JP-0271263 (1990-10-09); JP-0271264 (1990-10-09); JP-0321805 (1990-11-26); JP-0328090 (1990-11-28)
발명자 / 주소
  • Iwamatsu Seiichi (Suwa JPX)
출원인 / 주소
  • Seiko Epson Corporation (Tokyo JPX 03)
인용정보 피인용 횟수 : 152  인용 특허 : 0

초록

Thin-film SOI semiconductor devices formed in a thin film Si semiconductor substrate layer formed on an insulating layer on a semiconductor substrate have improved electrical characteristics and reliable reproducibility of those characteristics in the mass production, which are obtained by utilizing

대표청구항

A thin-film SOI semiconductor device, comprising: an n+-type semiconductor substrate having a high concentration of n-type impurity for maintaining the threshold voltage of the device constant; an insulating film formed on a surface of said substrate; and a thin silicon film doped with impurities an

이 특허를 인용한 특허 (152)

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