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Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-045/00
출원번호 US-0747053 (1991-08-19)
발명자 / 주소
  • Ovshinsky Stanford R. (Bloomfield Hills MI) Czubatyj Wolodymyr (Warren MI) Ye Quiyi (Rochester MI) Strand David A. (West Bloomfield MI) Hudgens Stephen J. (Southfield MI)
출원인 / 주소
  • Energy Conversion Devices, Inc. (Troy MI 02)
인용정보 피인용 횟수 : 468  인용 특허 : 0

초록 ▼

A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique

대표청구항 ▼

An electrically operated, directly overwritable, multibit, single-cell memory element comprising: a volume of memory material defining a single cell memory element, said memory material constituting means for assuming a large dynamic range of electrical resistance values with the ability to be set d

이 특허를 인용한 특허 (468)

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  216. Campbell, Kristy A., Method of forming a variable resistance memory device comprising tin selenide.
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  240. Moore,John T.; Gilton,Terry L.; Campbell,Kristy A., Method of refreshing a PCRAM memory device.
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  241. Kostylev, Sergey A., Method of restoring variable resistance memory device.
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  244. Chiang, Chien; Wicker, Guy C., Method to enhance performance of thermal resistor device.
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