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특허 상세정보

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내보내기 페이스북 공유 카카오톡 공유

Photodetector with a resonant cavity

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-027/14   
미국특허분류(USC) 257/16 ; 257/17 ; 257/21 ; 257/22
출원번호 US-0054947 (1993-04-30)
발명자 / 주소
  • Hunt Neil E. J. (Scotch Plains NJ) Schubert Erdmann F. (New Providence NJ) Zydzik George J. (Columbia NJ)
출원인 / 주소
  • AT&T Bell Laboratories (Murray Hill NJ 02)
인용정보 피인용 횟수 : 74  인용 특허 : 0
초록
▼

Described is a resonant-cavity p-i-n photodetector based on the reflection or transmission through a Fabry-Perot cavity incorporating non-epitaxial, amorphous layers with alternating refractive index difference which layers are electron-beam deposited on a light-gathering side of a commercially available photodetector. The materials of the Fabry-Perot cavity are selectable from materials, refractive indices of which fall within a large range (from n=1.26 for CaF2 to n=3.5 for Si) preferably from materials which are depositable in an amorphous state. The ...

대표
청구항
▼

A photodetector which comprises a photodiode comprising a substrate, a light-absorbing region and electrodes to the substrate and the light-absorbing region, said photodiode having a light-collecting surface, in which a Fabry-Perot cavity is formed upon said light-collecting surface, said Fabry-Perot cavity including, in an ascending order from said light-collecting surface, a distributed Bragg reflector (DBR) bottom mirror, an active region and a DBR top mirror, each of said top and bottom mirrors comprises a plurality of periods, each period comprising...

이 특허를 인용한 특허 (74)

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  9. Passlack, Matthias; Hartin, Olin L.; Ray, Marcus; Medendorp, Nicholas, Enhancement mode metal-oxide-semiconductor field effect transistor.
  10. Vieira,Amarildo J. C.; Barenburg,Barbara F.; Brophy,Timothy J., Fabrication of a wavelength locker within a semiconductor structure.
  11. Liang, Yong; Droopad, Ravindranath; Li, Hao; Yu, Zhiyi, Ferromagnetic semiconductor structure and method for forming the same.
  12. Wang, Tzu-Yu, Graded thickness optical element and method of manufacture therefor.
  13. El Zein,Nada; Ramdani,Jamal; Eisenbeiser,Kurt; Droopad,Ravindranath, Heterojunction tunneling diodes and process for fabricating same.
  14. Rosencher Emmanuel,FRX ; Vinter Borge,FRX ; Berger Vincent,FRX ; Kaplan Daniel,FRX ; Micheron Fran.cedilla.ois,FRX, Infrared detector with non-cooled quantum well structure.
  15. Brukilacchio, Thomas J., Light emitting diode illumination system.
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  20. Brukilacchio, Thomas J.; Conner, Arlie R., Light emitting diode illumination system.
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  26. Jaffe, Claudia B.; Jaffe, Steven M.; Conner, Arlie R., Lighting design of high quality biomedical devices.
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  30. Jaffe, Claudia B.; Jaffe, Steven M.; Conner, Arlie R., Lighting design of high quality biomedical devices.
  31. Ooms,William J.; Hallmark,Jerald A., Method and apparatus utilizing monocrystalline insulator.
  32. Liang,Yong; Droopad,Ravindranath; Hu,Xiaoming; Wang,Jun; Wei,Yi; Yu,Zhiyi, Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process.
  33. Li, Hao; Droopad, Ravindranath; Marshall, Daniel S.; Wei, Yi; Hu, Xiao M.; Liang, Yong, Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate.
  34. Mitra,Pradip, Multi-spectral infrared super-pixel photodetector and imager.
  35. Viens, Jean Francois; Agarwal, Anuradha M.; Kimerling, Lionel C., Multi-spectral pixel and focal plane array.
  36. Mitra, Pradip, Multi-wavelength high bandwidth communication receiver and system.
  37. Levine, Peter Alan; Zhu, Rui; Tower, John Robertson, Night vision CMOS imager with optical pixel cavity.
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  41. Talin,Albert Alec; Voight,Steven A., Optical waveguide structure and method for fabricating the same.
  42. Chen, Shu-Lu; Na, Yun-Chung, Photonic lock based high bandwidth photodetector.
  43. Chen, Shu-Lu; Na, Yun-Chung, Photonic lock based high bandwidth photodetector.
  44. Albrecht,Tony; Brick,Peter; Plaine,Glenn Yves; Philippens,Marc, Radiation-sensitive semiconductor body having an integrated filter layer.
  45. Bylsma Richard Bendicks ; Rinaudo Dominic Paul ; Schlenker Rory Keene ; Shakespeare Walter Jeffrey, Raised photodetector with recessed light responsive region.
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  47. Dodd Mark A., Resonant cavity field enhancing boundary.
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  57. Jaffe, Steven M.; Jaffe, Claudia B.; Tylinski, George S., Solid state continuous white light source.
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  59. Jaffe, Steven M.; Jaffe, Claudia B.; Tylinski, George S., Solid state continuous white light source.
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  61. Jaffe, Claudia B.; Jaffe, Steven M.; Tylinski, George S., Solid state light source for photocuring.
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