이 특허를 인용한 특허 (283)

1. Daley, Jon; Campbell, Kristy A.; Brooks, Joseph F., Access transistor for memory device.

   상세보기
2. Daley, Jon; Campbell, Kristy A.; Brooks, Joseph F., Access transistor for memory device.

   상세보기
3. Daley, Jon; Campbell, Kristy A.; Brooks, Joseph F., Access transistor for memory device.

   상세보기
4. Bulovic, Vladimir; Mandell, Aaron; Perlman, Andrew, Addressable and electrically reversible memory switch.

   상세보기
5. Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.

   상세보기
6. Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.

   상세보기
7. Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.

   상세보기
8. Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.

   상세보기
9. Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.

   상세보기
10. Ikarashi, Minoru; Aratani, Katsuhisa, Amorphous semiiconductor layer memory device.

    상세보기
11. Kumar, Tanmay, Amorphous silicon RRAM with non-linear device and operation.

    상세보기
12. Moore, John, Apparatus and method for dual cell common electrode PCRAM memory device.

    상세보기
13. Campbell,Kristy A., Assemblies displaying differential negative resistance.

    상세보기
14. Campbell, Kristy A., Assemblies displaying differential negative resistance, semiconductor constructions, and methods of forming assemblies displaying differential negative resistance.

    상세보기
15. Kuo, Harry; Nazarian, Hagop; Nguyen, San Thanh, Capacitive discharge programming for two-terminal memory cells.

    상세보기
16. Moore, John T.; Gilton, Terry L., Chalcogenide comprising device.

    상세보기
17. Campbell, Kristy A.; Gilton, Terry L.; Moore, John T.; Brooks, Joseph F., Chalcogenide glass constant current device, and its method of fabrication and operation.

    상세보기
18. Campbell, Kristy A.; Gilton, Terry L.; Moore, John T.; Brooks, Joseph F., Chalcogenide glass constant current device, and its method of fabrication and operation.

    상세보기
19. Campbell, Kristy A.; Gilton, Terry L.; Moore, John T.; Brooks, Joseph F., Chalcogenide glass constant current device, and its method of fabrication and operation.

    상세보기
20. Campbell,Kristy A., Chalcogenide-based electrokinetic memory element and method of forming the same.

    상세보기
21. Grigorian Leonid ; Eklund Peter ; Fang Shaoli, Clathrate structure for electronic and electro-optic applications.

    상세보기
22. Li, Jiutao; McTeer, Allen; Herdt, Gregory; Doan, Trung T., Co-sputter deposition of metal-doped chalcogenides.

    상세보기
23. Li,Jiutao; McTeer,Allen; Herdt,Gregory; Doan,Trung T., Co-sputter deposition of metal-doped chalcogenides.

    상세보기
24. Li,Jiutao; McTeer,Allen; Herdt,Gregory; Doan,Trung T., Co-sputter deposition of metal-doped chalcogenides.

    상세보기
25. Nejad,Hasan; Seyyedy,Mirmajid, Columnar 1T-N memory cell structure.

    상세보기
26. Hush, Glen; Baker, Jake, Complementary bit PCRAM sense amplifier and method of operation.

    상세보기
27. Hush, Glen; Baker, Jake, Complementary bit PCRAM sense amplifier and method of operation.

    상세보기
28. Hush,Glen; Baker,Jake, Complementary bit resistance memory sensor and method of operation.

    상세보기
29. Jo, Sung Hyun, Conductive path in switching material in a resistive random access memory device and control.

    상세보기
30. Jo, Sung Hyun, Conductive path in switching material in a resistive random access memory device and control.

    상세보기
31. Campbell, Kristy A., Continuously variable resistor.

    상세보기
32. Jo, Sung Hyun; Lu, Wei, Device switching using layered device structure.

    상세보기
33. Jo, Sung Hyun; Lu, Wei, Device switching using layered device structure.

    상세보기
34. Jo, Sung Hyun; Lu, Wei, Device switching using layered device structure.

    상세보기
35. Campbell, Kristy A., Differential negative resistance memory.

    상세보기
36. Campbell,Kristy A., Differential negative resistance memory.

    상세보기
37. Campbell,Kristy A., Differential negative resistance memory.

    상세보기
38. Herner, Scott Brad; Nazarian, Hagop, Disturb-resistant non-volatile memory device and method.

    상세보기
39. Herner, Scott Brad, Disturb-resistant non-volatile memory device using via-fill and etchback technique.

    상세보기
40. Herner, Scott Brad, Disturb-resistant non-volatile memory device using via-fill and etchback technique.

    상세보기
41. Hush, Glen; Duesman, Kevin G.; Casper, Steve, Dual write cycle programmable conductor memory system and method of operation.

    상세보기
42. Maxwell, Steven Patrick, Electrode structure for a non-volatile memory device and method.

    상세보기
43. Moore, John T.; Brooks, Joseph F., Electrode structure for use in an integrated circuit.

    상세보기
44. Moore,John T.; Brooks,Joseph F., Electrode structure for use in an integrated circuit.

    상세보기
45. Majima, Yutaka; Teranishi, Toshiharu; Azuma, Yasuo; Sakamoto, Masanori; Kano, Shinya; Hurtado Salinas, Daniel Eduardo, Electronic element.

    상세보기
46. Li, Jiutao; McTeer, Allen, Elimination of dendrite formation during metal/chalcogenide glass deposition.

    상세보기
47. Li, Jiutao; McTeer, Allen, Elimination of dendrite formation during metal/chalcogenide glass deposition.

    상세보기
48. Liu, Jun, Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication.

    상세보기
49. Liu, Jun, Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication.

    상세보기
50. Campbell,Kristy A.; Moore,John T.; Gilton,Terry L., Fabrication of single polarity programmable resistance structure.

    상세보기
51. Fu, Kai-Mei; Strachan, John Paul; Beausoleil, Raymond; Borghetti, Julien, Fast time-tagged event detection using resistive switching devices.

    상세보기
52. Asnaashari, Mehdi; Nazarian, Hagop; Nguyen, Sang, Field programmable gate array utilizing two-terminal non-volatile memory.

    상세보기
53. Nazarian, Hagop; Nguyen, Sang Thanh; Kumar, Tanmay, Field programmable gate array utilizing two-terminal non-volatile memory.

    상세보기
54. Nazarian, Hagop; Nguyen, Sang Thanh; Kumar, Tanmay, Field programmable gate array utilizing two-terminal non-volatile memory.

    상세보기
55. Nazarian, Hagop; Jo, Sung Hyun, Filamentary based non-volatile resistive memory device and method.

    상세보기
56. Nazarian, Hagop; Jo, Sung Hyun, Filamentary based non-volatile resistive memory device and method.

    상세보기
57. Mandell, Aaron; Perlman, Andrew, Floating gate memory device using composite molecular material.

    상세보기
58. Li, Jiutao; Hampton, Keith; McTeer, Allen, Forming a memory device using sputtering to deposit silver-selenide film.

    상세보기
59. Jo, Sung Hyun, Guided path for forming a conductive filament in RRAM.

    상세보기
60. Jo, Sung Hyun, Guided path for forming a conductive filament in RRAM.

    상세보기
61. Jo, Sung Hyun, Hereto resistive switching material layer in RRAM device and method.

    상세보기
62. Jo, Sung Hyun, Hetero resistive switching material layer in RRAM device and method.

    상세보기
63. Jo, Sung Hyun, Hetero-switching layer in a RRAM device and method.

    상세보기
64. Jo, Sung Hyun, Hetero-switching layer in a RRAM device and method.

    상세보기
65. Nguyen, Sang; Nazarian, Hagop, High operating speed resistive random access memory.

    상세보기
66. Li, Jiutao; McTeer, Allen, Integrated circuit device and fabrication using metal-doped chalcogenide materials.

    상세보기
67. Li, Jiutao; McTeer, Allen, Integrated circuit device and fabrication using metal-doped chalcogenide materials.

    상세보기
68. Li, Jiutao; McTeer, Allen, Integrated circuit device and fabrication using metal-doped chalcogenide materials.

    상세보기
69. Jo, Sung Hyun; Nazarian, Hagop; Lu, Wei, Interface control for improved switching in RRAM.

    상세보기
70. Jo, Sung Hyun; Nazarian, Hagop; Lu, Wei, Interface control for improved switching in RRAM.

    상세보기
71. Campbell, Kristy A.; Li, Jiutao; McTeer, Allen; Moore, John T., Layered resistance variable memory device and method of fabrication.

    상세보기
72. Campbell, Kristy A.; Li, Jiutao; McTeer, Allen; Moore, John T., Layered resistance variable memory device and method of fabrication.

    상세보기
73. Campbell,Kristy A.; Li,Jiutao; McTeer,Allen; Moore,John T., Layered resistance variable memory device and method of fabrication.

    상세보기
74. Maxwell, Steven Patrick, Line and space architecture for a non-volatile memory device.

    상세보기
75. Sun, Xin; Jo, Sung Hyun; Kumar, Tanmay, Low temperature P+ polycrystalline silicon material for non-volatile memory device.

    상세보기
76. Sun, Xin; Jo, Sung Hyun; Kumar, Tanmay, Low temperature P+ polycrystalline silicon material for non-volatile memory device.

    상세보기
77. Herner, Scott Brad, Low temperature fabrication method for a three-dimensional memory device and structure.

    상세보기
78. Clark, Mark Harold, Low temperature p+ silicon junction material for a non-volatile memory device.

    상세보기
79. Nazarian, Hagop; Jo, Sung Hyun; Lu, Wei, Memory array architecture with two-terminal memory cells.

    상세보기
80. Daley,Jon, Memory array for increased bit density.

    상세보기
81. Daley, Jon, Memory array for increased bit density and method of forming the same.

    상세보기
82. Li,Li; Li,Jiutao, Memory cell intermediate structure.

    상세보기
83. Krieger, Juri H.; Yudanov, Nikolai, Memory device.

    상세보기
84. Krieger, Juri H.; Yudanov, Nikolai, Memory device.

    상세보기
85. Krieger, Juri H.; Yudanov, Nikolai, Memory device.

    상세보기
86. Krieger, Juri H.; Yudanoy, Nikolai, Memory device.

    상세보기
87. Moore, John T.; Campbell, Kristy A., Memory device and methods of controlling resistance variation and resistance profile drift.

    상세보기
88. Campbell, Kristy A., Memory device incorporating a resistance variable chalcogenide element.

    상세보기
89. Krieger, Juri H.; Yudanov, N. F., Memory device with a self-assembled polymer film and method of making the same.

    상세보기
90. Krieger, Juri H.; Yudanov, Nikolai, Memory device with active and passive layers.

    상세보기
91. Krieger, Juri H.; Yudanov, Nikolai, Memory device with active passive layers.

    상세보기
92. Campbell,Kristy A., Memory device with switching glass layer.

    상세보기
93. Moore,John T.; Gilton,Terry L., Memory device, programmable resistance memory cell and memory array.

    상세보기
94. Daley, Jon; Brooks, Joseph F., Memory elements having patterned electrodes and method of forming the same.

    상세보기
95. Daley, Jon; Brooks, Joseph F., Memory elements having patterned electrodes and method of forming the same.

    상세보기
96. Wu, Wei; Strachan, John Paul; Williams, R. Stanley; Florentino, Marco; Wang, Shih-Yuan; Quitoriano, Nathaniel J.; Cho, Hans S.; Borghetti, Julien; Mathai, Sagi Varghese, Memristive device.

    상세보기
97. Daley,Jon, Method and apparatus for accessing a memory array.

    상세보기
98. Nevin,Donald, Method and apparatus for large scale storage of electrical potential.

    상세보기
99. Campbell,Kristy A., Method and apparatus for providing color changing thin film material.

    상세보기
100. Campbell,Kristy A., Method and apparatus for resistance variable material cells.

     상세보기
101. Casper, Stephen L.; Duesman, Kevin; Hush, Glen, Method and apparatus for sensing resistive memory state.

     상세보기
102. Hush, Glen, Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance.

     상세보기
103. Hush, Glen, Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance.

     상세보기
104. Hush, Glen, Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance.

     상세보기
105. Hush, Glen, Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance.

     상세보기
106. Hush,Glen, Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance.

     상세보기
107. Lu, Wei, Method and structure of monolithically integrated IC and resistive memory using IC foundry-compatible processes.

     상세보기
108. Li,Li; Li,Jiutao, Method for filling via with metal.

     상세보기
109. Herner, Scott Brad, Method for forming stackable non-volatile resistive switching memory devices.

     상세보기
110. Gilton, Terry L.; Moore, John T., Method for programming a memory cell.

     상세보기
111. Maxwell, Steven Patrick; Jo, Sung-Hyun, Method for silver deposition for a non-volatile memory device.

     상세보기
112. Maxwell, Steven Patrick; Jo, Sung-Hyun; Herner, Scott Brad, Method for silver deposition for a non-volatile memory device.

     상세보기
113. Moore,John T.; Brooks,Joseph F., Method of fabricating an electrode structure for use in an integrated circuit.

     상세보기
114. Moore, John, Method of fabricating dual PCRAM cells sharing a common electrode.

     상세보기
115. Campbell,Kristy A., Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element.

     상세보기
116. Moore, John T.; Gilton, Terry L., Method of forming a chalcogenide comprising device.

     상세보기
117. Brooks,Joseph F., Method of forming a chalcogenide material containing device.

     상세보기
118. Brooks,Joseph F., Method of forming a chalcogenide material containing device.

     상세보기
119. Campbell,Kristy A.; Gilton,Terry L.; Moore,John T., Method of forming a memory cell.

     상세보기
120. Campbell, Kristy A., Method of forming a memory device incorporating a resistance variable chalcogenide element.

     상세보기
121. Campbell, Kristy A., Method of forming a memory device incorporating a resistance variable chalcogenide element.

     상세보기
122. Campbell, Kristy A., Method of forming a memory device incorporating a resistance-variable chalcogenide element.

     상세보기
123. Moore, John T.; Gilton, Terry L., Method of forming a non-volatile resistance variable device.

     상세보기
124. Campbell,Kristy A.; Moore,John T., Method of forming a programmable memory cell and chalcogenide structure.

     상세보기
125. Moore,John T.; Campbell,Kristy A.; Gilton,Terry L., Method of forming a resistance variable memory element.

     상세보기
126. Campbell, Kristy A., Method of forming a variable resistance memory device comprising tin selenide.

     상세보기
127. Gilton, Terry L., Method of forming and storing data in a multiple state memory cell.

     상세보기
128. Campbell, Kristy A.; Gilton, Terry L.; Moore, John T.; Li, Jiutao, Method of forming chalcogenide comprising devices.

     상세보기
129. Campbell, Kristy A.; Moore, John T., Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry.

     상세보기
130. Campbell, Kristy A.; Moore, John T., Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device.

     상세보기
131. Moore, John T., Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices.

     상세보기
132. Moore,John T.; Brooks,Joseph F., Method of forming electrode structure for use in an integrated circuit.

     상세보기
133. Moore, John T., Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry.

     상세보기
134. Campbell,Kristy A.; Moore,John T., Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry.

     상세보기
135. Harshfield,Steven T.; Wright,David Q., Method of making a memory cell.

     상세보기
136. Moore, John T.; Campbell, Kristy A.; Gilton, Terry L., Method of manufacture of a PCRAM memory cell.

     상세보기
137. Moore,John T.; Campbell,Kristy A.; Gilton,Terry L., Method of manufacture of a PCRAM memory cell.

     상세보기
138. Moore,John T.; Campbell,Kristy A.; Gilton,Terry L., Method of manufacture of a resistance variable memory cell.

     상세보기
139. Gilton,Terry L., Method of manufacture of programmable conductor memory.

     상세보기
140. Gilton, Terry L., Method of manufacture of programmable switching circuits and memory cells employing a glass layer.

     상세보기
141. Hush,Glen; Baker,Jake, Method of operating a complementary bit resistance memory sensor.

     상세보기
142. Hush,Glen; Baker,Jake, Method of operating a complementary bit resistance memory sensor and method of operation.

     상세보기
143. Moore,John T.; Gilton,Terry L.; Campbell,Kristy A., Method of refreshing a PCRAM memory device.

     상세보기
144. Gilton, Terry L.; Campbell, Kristy A., Method of retaining memory state in a programmable conductor RAM.

     상세보기
145. Gilton, Terry L.; Campbell, Kristy A., Method of retaining memory state in a programmable conductor RAM.

     상세보기
146. Campbell, Kristy A.; Moore, John; Gilton, Terry L.; Brooks, Joseph F., Method to alter chalcogenide glass for improved switching characteristics.

     상세보기
147. Moore, John T.; Gilton, Terry L., Method to manufacture a buried electrode PCRAM cell.

     상세보기
148. Campbell, Kristy A., Methods and apparatus for resistance variable material cells.

     상세보기
149. Gee, Harry Yue; Maxwell, Steven Patrick; Vasquez, Jr., Natividad; Clark, Mark Harold, Methods for fabricating resistive memory device switching material using ion implantation.

     상세보기
150. Moore,John T.; Gilton,Terry L., Methods of forming a semiconductor memory device.

     상세보기
151. Li,Li; Li,Jiutao, Methods of forming and using memory cell structures.

     상세보기
152. Campbell,Kristy A., Methods of forming assemblies displaying differential negative resistance.

     상세보기
153. Daley, Jon, Methods of forming memory arrays for increased bit density.

     상세보기
154. Giltom, Terry L.; Campbell, Kristy A.; Moore, John T., Methods of forming non-volatile resistance variable devices and methods of forming silver selenide comprising structures.

     상세보기
155. Moore, John T.; Gilton, Terry L., Methods of metal doping a chalcogenide material.

     상세보기
156. Campbell,Kristy A.; Gilton,Terry L.; Moore,John T.; Brooks,Joseph F., Methods of operating and forming chalcogenide glass constant current devices.

     상세보기
157. Moore, John T.; Gilton, Terry L.; Campbell, Kristy A., Methods to form a memory cell with metal-rich metal chalcogenide.

     상세보기
158. Moore,John T.; Gilton,Terry L.; Campbell,Kristy A., Methods to form a memory cell with metal-rich metal chalcogenide.

     상세보기
159. Kozicki, Michael N, Microelectric programmable device and methods of forming and programming the same.

     상세보기
160. Kozicki, Michael N.; Mitkova, Maria, Microelectronic programmable device and methods of forming and programming the same.

     상세보기
161. Kozicki,Michael N; Mitkova,Maria, Microelectronic programmable device and methods of forming and programming the same.

     상세보기
162. Lu, Wei, Modeling technique for resistive random access memory (RRAM) cells.

     상세보기
163. Krieger, Juri H.; Yudanov, Nikolay F., Molecular memory cell.

     상세보기
164. Krieger,Juri H; Yudanov,Nicolay F, Molecular memory cell.

     상세보기
165. Bulovic, Vladimir; Mandell, Aaron; Perlman, Andrew, Molecular memory device.

     상세보기
166. Narayanan, Sundar; Maxwell, Steve; Vasquez, Jr., Natividad; Gee, Harry Yue, Monolithically integrated resistive memory using integrated-circuit foundry compatible processes.

     상세보기
167. Narayanan, Sundar; Maxwell, Steve; Vasquez, Jr., Natividad; Gee, Harry Yue, Monolithically integrated resistive memory using integrated-circuit foundry compatible processes.

     상세보기
168. Gilton, Terry L., Multiple data state memory cell.

     상세보기
169. Gilton,Terry L., Multiple data state memory cell.

     상세보기
170. Gilton,Terry L., Multiple data state memory cell.

     상세보기
171. Jo, Sung Hyun; Kim, Kuk-Hwan; Kumar, Tanmay, Noble metal / non-noble metal electrode for RRAM applications.

     상세보기
172. Gilton, Terry L., Non-volatile memory structure.

     상세보기
173. Gilton, Terry L., Non-volatile memory structure.

     상세보기
174. Gilton,Terry L., Non-volatile memory structure.

     상세보기
175. Gilton,Terry L., Non-volatile memory structure.

     상세보기
176. Nazarian, Hagop; Nguyen, Sang, Non-volatile memory with overwrite capability and low write amplification.

     상세보기
177. Moore, John T., Non-volatile resistance variable device.

     상세보기
178. Campbell,Kristy A.; Moore,John T., Non-volatile resistance variable devices.

     상세보기
179. Gilton,Terry L., Non-volatile resistance variable devices and method of forming same, analog memory devices and method of forming same, programmable memory cell and method of forming same, and method of structurally .

     상세보기
180. Lu, Wei; Jo, Sung Hyun, Non-volatile solid state resistive switching devices.

     상세보기
181. Lu, Wei; Jo, Sung Hyun, Non-volatile solid state resistive switching devices.

     상세보기
182. Herner, Scott Brad, On/off ratio for non-volatile memory device and method.

     상세보기
183. Herner, Scott Brad, On/off ratio for nonvolatile memory device and method.

     상세보기
184. Kingsborough,Richard P.; Sokolik,Igor, Organic thin film Zener diodes.

     상세보기
185. Campbell, Kristy A., PCRAM device with switching glass layer.

     상세보기
186. Campbell, Kristy A., PCRAM device with switching glass layer.

     상세보기
187. Harshfield,Steven T.; Wright,David Q., PCRAM memory cell and method of making same.

     상세보기
188. Harshfield,Steven T.; Wright,David Q., PCRAM memory cell and method of making same.

     상세보기
189. Moore, John; Baker, Jake, PCRAM rewrite prevention.

     상세보기
190. Moore, John; Baker, R. Jacob, PCRAM rewrite prevention.

     상세보기
191. Campbell, Kristy A., Phase change memory cell and method of formation.

     상세보기
192. Campbell,Kristy A., Phase change memory cell and method of formation.

     상세보기
193. Herner, Scott Brad, Pillar structure for memory device and method.

     상세보기
194. Herner, Scott Brad, Pillar structure for memory device and method.

     상세보기
195. Li, Li; Gilton, Terry L.; Ko, Kei-Yu; Moore, John T.; Signorini, Karen, Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes.

     상세보기
196. Li,Li; Gilton,Terry L.; Ko,Kei Yu; Moore,John T.; Signorini,Karen, Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes.

     상세보기
197. Hardy, Trevor; Porter, Steve; Williford, Ethan; Ingram, Mark, Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory.

     상세보기
198. Hardy,Trevor; Porter,Steve; Williford,Ethan; Ingram,Mark, Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory.

     상세보기
199. Hardy,Trevor; Porter,Steve; Williford,Ethan; Ingram,Mark, Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory.

     상세보기
200. Klein, Dean A., Power management control and controlling memory refresh operations.

     상세보기
201. Klein, Dean A., Power management control and controlling memory refresh operations.

     상세보기
202. Klein, Dean A., Power management control and controlling memory refresh operations.

     상세보기
203. Daley, Jon, Process for erasing chalcogenide variable resistance memory bits.

     상세보기
204. Daley,Jon, Process for erasing chalcogenide variable resistance memory bits.

     상세보기
205. Gilton, Terry L., Programmable conductor memory cell structure.

     상세보기
206. Gilton, Terry L., Programmable conductor memory cell structure and method therefor.

     상세보기
207. Gilton, Terry L., Programmable conductor memory cell structure and method therefor.

     상세보기
208. Gilton,Terry L., Programmable conductor memory cell structure and method therefor.

     상세보기
209. Hush, Glen, Programmable conductor random access memory and a method for writing thereto.

     상세보기
210. Casper, Stephen L.; Duesman, Kevin; Hush, Glen, Programmable conductor random access memory and method for sensing same.

     상세보기
211. Kozicki,Michael N., Programmable microelectronic device, structure, and system and method of forming the same.

     상세보기
212. Michael N. Kozicki, Programmable microelectronic devices and method of forming and programming same.

     상세보기
213. Kozicki,Michael N.; West,William C., Programmable sub-surface aggregating metallization structure and method of making same.

     상세보기
214. Lu, Wei; Jo, Sung Hyun, Rectified switching of two-terminal memory via real time filament formation.

     상세보기
215. Maxwell, Steven Patrick; Jo, Sung Hyun, Reduced diffusion in metal electrode for two-terminal memory.

     상세보기
216. Gilton, Terry L.; Doan, Trung T., Removable programmable conductor memory card and associated read/write device and method of operation.

     상세보기
217. Gilton, Terry L., Resistance variable device.

     상세보기
218. Moore,John T., Resistance variable device.

     상세보기
219. Gilton, Terry L., Resistance variable device, analog memory device, and programmable memory cell.

     상세보기
220. Harshfield, Steven T.; Wright, David Q., Resistance variable memory cells.

     상세보기
221. Campbell,Kristy A., Resistance variable memory device and method of fabrication.

     상세보기
222. Campbell,Kristy A., Resistance variable memory device and method of fabrication.

     상세보기
223. Campbell,Kristy A., Resistance variable memory device and method of fabrication.

     상세보기
224. Campbell, Kristy A.; Daley, Jon; Brooks, Joseph F., Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication.

     상세보기
225. Campbell,Kristy A.; Daley,Jon; Brooks,Joseph F., Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication.

     상세보기
226. Campbell,Kristy A.; Daley,Jon; Brooks,Joseph F., Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication.

     상세보기
227. Campbell, Kristy A.; Gilton, Terry L.; Moore, John T.; Li, Jiutao, Resistance variable memory devices with passivating material.

     상세보기
228. Moore, John T.; Campbell, Kristy A.; Gilton, Terry L., Resistance variable memory element and its method of formation.

     상세보기
229. Campbell,Kristy A.; Daley,Jon; Brooks,Joseph F., Resistance variable memory element with threshold device and method of forming the same.

     상세보기
230. Campbell,Kristy A.; Daley,Jon; Brooks,Joseph F., Resistance variable memory element with threshold device and method of forming the same.

     상세보기
231. Campbell,Kristy A., Resistance variable memory elements and methods of formation.

     상세보기
232. Campbell, Kristy A., Resistance variable memory with temperature tolerant materials.

     상세보기
233. Campbell, Kristy A., Resistance variable memory with temperature tolerant materials.

     상세보기
234. Campbell,Kristy A., Resistance variable memory with temperature tolerant materials.

     상세보기
235. Campbell,Kristy A., Resistance variable memory with temperature tolerant materials.

     상세보기
236. Campbell, Kristy A.; Moore, John T.; Gilton, Terry L., Resistance variable ‘on ’ memory.

     상세보기
237. Jo, Sung Hyun; Nazarian, Hagop, Resistive RAM with preferental filament formation region and methods.

     상세보기
238. Nazarian, Hagop; Kumar, Tanmay; Jo, Sung Hyun, Resistive memory cell with solid state diode.

     상세보기
239. Jo, Sung Hyun; Kim, Kuk-Hwan; Kumar, Tanmay, Resistive memory device and fabrication methods.

     상세보기
240. Jo, Sung Hyun; Kim, Kuk-Hwan; Kumar, Tanmay, Resistive memory device and fabrication methods.

     상세보기
241. Lu, Wei, Resistive memory using SiGe material.

     상세보기
242. Lu, Wei, Resistive memory using SiGe material.

     상세보기
243. Nazarian, Hagop; Nguyen, Sang, Resistive random access memory equalization and sensing.

     상세보기
244. Jo, Sung Hyun; Kim, Kuk-Hwan, Resistive random access memory with non-linear current-voltage relationship.

     상세보기
245. Kumar, Tanmay, Resistive switching device structure with improved data retention for non-volatile memory device and method.

     상세보기
246. Jo, Sung Hyun, Resistor structure for a non-volatile memory device and method.

     상세보기
247. Jo, Sung Hyun, Resistor structure for a non-volatile memory device and method.

     상세보기
248. Bulovic, Vladimir; Mandell, Aaron; Perlman, Andrew, Reversible field-programmable electric interconnects.

     상세보기
249. Bulovic,Vladimir; Mandell,Aaron; Perlman,Andrew, Reversible field-programmable electric interconnects.

     상세보기
250. Moore,John; Baker,R. Jacob, Rewrite prevention in a variable resistance memory.

     상세보기
251. Clark, Mark Harold; Vasquez, Natividad; Maxwell, Steven, Scalable RRAM device architecture for a non-volatile memory device and method.

     상세보기
252. Clark, Mark Harold; Herner, Scott Brad, Seed layer for a p+ silicon germanium material for a non-volatile memory device and method.

     상세보기
253. Herner, Scott Brad; Vasquez, Natividad, Selective removal method and structure of silver in resistive switching device for a non-volatile memory device.

     상세보기
254. Williford,Ethan; Ingram,Mark, Sensing of resistance variable memory devices.

     상세보기
255. Williford,Ethan; Ingram,Mark, Sensing of resistance variable memory devices.

     상세보기
256. Lu, Wei; Jo, Sung Hyun; Kim, Kuk-Hwan, Silicon based nanoscale crossbar memory.

     상세보기
257. Herner, Scott Brad, Silver interconnects for stacked non-volatile memory device and method.

     상세보기
258. Li,Jiutao; Hampton,Keith; McTeer,Allen, Silver selenide film stoichiometry and morphology control in sputter deposition.

     상세보기
259. Li,Jiutao; Hampton,Keith; McTeer,Allen, Silver selenide film stoichiometry and morphology control in sputter deposition.

     상세보기
260. Campbell, Kristy A.; Moore, John T., Silver-selenide/chalcogenide glass stack for resistance variable memory.

     상세보기
261. Campbell,Kristy A.; Moore,John T., Silver-selenide/chalcogenide glass stack for resistance variable memory.

     상세보기
262. Campbell, Kristy A.; Moore, John T., Silver-selenide/chalcogenide glass stack for resistance variable memory and manufacturing method thereof.

     상세보기
263. Campbell, Kristy A.; Moore, John T.; Gilton, Terry L., Single-polarity programmable resistance-variable memory element.

     상세보기
264. Liu,Jun; Gilton,Terry L.; Moore,John T., Small electrode for resistance variable devices.

     상세보기
265. Campbell, Kristy A., SnSe-based limited reprogrammable cell.

     상세보기
266. Campbell,Kristy A., SnSe-based limited reprogrammable cell.

     상세보기
267. Gilton,Terry L., Software refreshed memory device and method.

     상세보기
268. Herner, Scott Brad, Stackable non-volatile resistive switching memory device.

     상세보기
269. Herner, Scott Brad, Stackable non-volatile resistive switching memory device and method of fabricating the same.

     상세보기
270. Herner, Scott Brad, Stackable non-volatile resistive switching memory devices.

     상세보기
271. Gee, Harry Yue; Clark, Mark Harold; Maxwell, Steven Patrick; Jo, Sung Hyun; Vasquez, Jr., Natividad, Sub-oxide interface layer for two-terminal memory.

     상세보기
272. Lu, Wei; Jo, Sung Hyun, Switching device having a non-linear element.

     상세보기
273. Lu, Wei; Jo, Sung Hyun; Nazarian, Hagop, Switching device having a non-linear element.

     상세보기
274. Gilton, Terry L., Thin film diode integrated with chalcogenide memory cell.

     상세보기
275. Gilton,Terry L., Thin film diode integrated with chalcogenide memory cell.

     상세보기
276. Herner, Scott Brad, Thin film transistor steering element for a non-volatile memory device.

     상세보기
277. Jo, Sung Hyun; Bettinger, Joanna; Liu, Xianliang, Three-dimensional oblique two-terminal memory with enhanced electric field.

     상세보기
278. Jo, Sung Hyun; Kim, Kuk-Hwan; Bettinger, Joanna, Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects.

     상세보기
279. Jo, Sung Hyun; Kim, Kuk-Hwan; Bettinger, Joanna, Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects.

     상세보기
280. Jo, Sung Hyun; Herner, Scott Brad, Two terminal resistive switching device structure and method of fabricating.

     상세보기
281. Hush, Glen; Moore, John, Variable resistance memory and method for sensing same.

     상세보기
282. Herner, Scott Brad, Vertical diodes for non-volatile memory device.

     상세보기
283. Herner, Scott Brad, p+ Polysilicon material on aluminum for non-volatile memory device and method.

     상세보기
더보기