초록 ▼

Disclosed herein is a sputtering target with which a high resistivity thin film consisting of chromium, silicon and oxygen can be produced economically and stably for a long time. Also disclosed is a process for producing the sputtering target by selecting the grain size of a chromium (Cr) powder an

Disclosed herein is a sputtering target with which a high resistivity thin film consisting of chromium, silicon and oxygen can be produced economically and stably for a long time. Also disclosed is a process for producing the sputtering target by selecting the grain size of a chromium (Cr) powder and a silicon dioxide (SiO 2 ) powder, drying the powders sufficiently by heating, then mixing the dried powders to obtain a mixed powder containing generally from 20 to 80% by weight of chromium, most preferably from 50 to 80% by weight of chromium, the remainder being silicon dioxide, packing the mixed powder in a die, and sintering the packed powder by hot pressing or the like, to produce a desired sputtering target which has a two phase mixed structure. The sputtering target can be used for manufacture of thin film resistors and electric circuits.

대표청구항 ▼

1. A sputtering target comprising a sintered solid, said sintered solid containing from 20 to 80% by weight of metallic chromium (Cr), the remainder being silicon dioxide (SiO 2 ). 2. A sputtering target comprising a sintered solid, said sintered solid containing from 50 to 80% by weight of metallic

1. A sputtering target comprising a sintered solid, said sintered solid containing from 20 to 80% by weight of metallic chromium (Cr), the remainder being silicon dioxide (SiO 2 ). 2. A sputtering target comprising a sintered solid, said sintered solid containing from 50 to 80% by weight of metallic chromium (Cr), the remainder being silicon dioxide (SiO 2 ). 3. The sputtering target according to claim 1, wherein the ratio of the actual density of the target to the theoretical density of the composition of the target (relative density) is 95% or above. 4. The sputtering target according to claim 2, wherein the ratio of the actual density of the target to the theoretical density of the composition of the target (relative density) is 95% or above. 5. The sputtering target according to claim 1 which has a two phase mixed structure comprising metallic chromium (Cr) particles, said chromium (Cr) particles having a particle diameter of 500 μm or below and having voids therebetween, and silicon dioxide (SiO 2 ) filling said voids between said chromium (Cr) particles. 6. The sputtering target according to claim 2 which has a two phase mixed structure comprising metallic chromium (Cr) particles, said chromium (Cr) particles having a particle diameter of 500 μm or below and having voids therebetween, and silicon dioxide (SiO 2 ) filling said voids between said chromium (Cr) particles. 7. The sputtering target according to claim 3 which has a two phase mixed structure comprising metallic chromium (Cr) particles, said chromium (Cr) particles having a particle diameter of 500 μm or below and having voids therebetween, and silicon dioxide (SiO 2 ) filling said voids between said chromium (Cr) particles. 8. The sputtering target according to claim 4 which has a two phase mixed structure comprising metallic chromium (Cr) particles, said chromium (Cr) particles having a particle diameter of 500 μm or below and having voids therebetween, and silicon dioxide (SiO 2 ) filling said voids between said chromium (Cr) particles. 9. A sputtering target according to claim 1, wherein said sintered solid is formed by selecting metallic chromium (Cr) particles and silicon dioxide (SiO 2 ) particles having particle diameters of 500 μm or below; mixing said metallic chromium (Cr) particles and said silicon dioxide (SiO 2 ) particles to obtain mixed particles; packing said mixed particles into a sealing can lined for prevention of reaction of said sealing can with said mixed particles; evacuating said sealing can; and sintering said mixed particles in said sealing can by hot isostatic pressing. 10. A sputtering target according to claim 2, wherein said sintered solid is formed by selecting metallic chromium (Cr) particles and silicon dioxide (SiO 2 ) particles having particle diameters of 500 μm or below; mixing said metallic chromium (Cr) particles and said silicon dioxide (SiO 2 ) particles to obtain mixed particles; packing said mixed particles into a sealing can lined for prevention of reaction of said sealing can with said mixed particles; evacuating said sealing can; and sintering said mixed particles in said sealing can by hot isostatic pressing. 11. A sputtering target according to claim 10, wherein said metallic chromium (Cr) particles and said silicon dioxide (SiO 2 ) particles each has a grain size in terms of Tyler No. of 32 to 1000 mesh under and wherein the grain size of said silicon dioxide (SiO 2 ) particles is equal to or smaller than the grain size of said metallic chromium (Cr) particles. 12. A sputtering target according to claim 9, wherein said metallic chromium (Cr) particles and said silicon dioxide (SiO 2 ) particles each has a grain size in terms of Tyler No. of 32 o 1000 mesh under and wherein the grain size of said silicon dioxide (SiO 2 ) particles is equal to or smaller than the grain size of said metallic chromium (Cr) particles. 13. A sputtering target according to claim 1, wherein said sintered solid is formed by selecting metallic chromium (Cr) particles and silicon dioxide (SiO 2 ) particles having particle diameters of 500 μm or below; mixing said metallic chromium (Cr) particles and said silicon dioxide (SiO 2 ) particles to obtain mixed particles; forming a body of the resulting mixed particles by pressing; placing the formed body in a die treated to have a barrier against diffusion; and sintering the formed body by hot pressing. 14. A sputtering target according to claim 2, wherein said sintered solid is formed by selecting metallic chromium (Cr) particles and silicon dioxide (SiO 2 ) particles having particle diameters of 500 μm or below; mixing said metallic chromium (Cr) particles and said silicon dioxide (SiO 2 ) particles to obtain mixed particles; forming a body of the resulting mixed particles by pressing; placing the formed body in a die treated to have a barrier against diffusion; and sintering the formed body by hot pressing. 15. A sputtering target according to claim 14, wherein said metallic chromium (Cr) particles and said silicon dioxide (SiO 2 ) particles each has a grain size in terms of Tyler No. of 32 to 1000 mesh under and wherein the grain size of said silicon dioxide (SiO 2 ) particles is equal to or smaller than the grain size of said metallic chromium (Cr) particles. 16. A sputtering target according to claim 13, wherein said metallic chromium (Cr) particles and said silicon dioxide (SiO 2 ) particles each has a grain size in terms of Tyler No. of 32 to 1000 mesh under and wherein grain size of said silicon dioxide (SiO 2 ) particles is equal to or smaller than the grain size of said metallic chromium (Cr) particles. 17. A sputtering target according to claim 9, wherein said metallic chromium (Cr) particles are provided with an oxide film on surfaces thereof prior to said mixing of said metallic chromium (Cr) particles with said silicon dioxide (SiO 2 ) particles. 18. A sputtering target according to claim 10, wherein said metallic chromium (Cr) particles are provided with an oxide film on surfaces thereof prior to said mixing of said metallic chromium (Cr) particles with said silicon dioxide (SiO 2 ) particles.