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Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-039/22
  • H01B-012/00
출원번호 US-0985086 (1992-12-02)
발명자 / 주소
  • Fork David K. (Palo Alto CA)
출원인 / 주소
  • Xerox Corporation (Stamford CT 02)
인용정보 피인용 횟수 : 41  인용 특허 : 0

초록

An article of manufacture having an epitaxial (111) magnesium oxide (MgO) layer, suitable for use as a buffer layer, on a (111) surface of a tetrahedral semiconductor substrate, and method for its manufacture is described. The article may further include an epitaxial oxide overlayer on the (111) MgO

대표청구항

A structure comprising: a (111) oriented tetrahedral compound semiconductor substrate; and a layer of epitaxial (111) magnesium oxide on said substrate.

이 특허를 인용한 특허 (41)

  1. McKee Rodney Allen ; Walker Frederick Joseph, CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films.
  2. Nashimoto Keiichi (Minami-ashigara JPX), Composite optical modulator.
  3. Hsu, Chung Chi, Epitaxial growth of III-V compounds on (111) silicon for solar cells.
  4. Vieira,Amarildo J. C.; Barenburg,Barbara F.; Brophy,Timothy J., Fabrication of a wavelength locker within a semiconductor structure.
  5. Takayama Ryoichi,JPX ; Tomita Yoshihiro,JPX ; Fujii Satoru,JPX ; Okano Masayuki,JPX ; Torii Hideo,JPX ; Fujii Eiji,JPX ; Tomozawa Atsushi,JPX, Ferroelectric thin film device and its process.
  6. Liang, Yong; Droopad, Ravindranath; Li, Hao; Yu, Zhiyi, Ferromagnetic semiconductor structure and method for forming the same.
  7. Droopad, Ravindranath, Growth of compound semiconductor structures on patterned oxide films and process for fabricating same.
  8. El Zein,Nada; Ramdani,Jamal; Eisenbeiser,Kurt; Droopad,Ravindranath, Heterojunction tunneling diodes and process for fabricating same.
  9. Curless, Jay A., Method and apparatus for controlling anti-phase domains in semiconductor structures and devices.
  10. Ooms,William J.; Hallmark,Jerald A., Method and apparatus utilizing monocrystalline insulator.
  11. Ramdani, Jamal; Droopad, Ravindranath; Yu, Zhiyi, Method for fabricating a semiconductor structure including a metal oxide interface with silicon.
  12. Liang,Yong; Droopad,Ravindranath; Hu,Xiaoming; Wang,Jun; Wei,Yi; Yu,Zhiyi, Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process.
  13. Li, Hao; Droopad, Ravindranath; Marshall, Daniel S.; Wei, Yi; Hu, Xiao M.; Liang, Yong, Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate.
  14. Gorrell, Jonathan F.; Cornett, Kenneth D., Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials.
  15. Yu, Zhiyi; Droopad, Ravindranath; Overgaard, Corey, Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method.
  16. Edwards, Jr., John L.; Wei, Yi; Jordan, Dirk C.; Hu, Xiaoming; Craigo, James Bradley; Droopad, Ravindranath; Yu, Zhiyi; Demkov, Alexander A., Method of removing an amorphous oxide from a monocrystalline surface.
  17. Talin,Albert Alec; Voight,Steven A., Optical waveguide structure and method for fabricating the same.
  18. Nashimoto Keiichi,JPX, Oriented ferroelectric thin film element.
  19. Nashimoto Keiichi (Kanagawa JPX) Masuda Atsushi (Kanagawa JPX), Oriented ferroelectric thin-film element and manufacturing method therefor.
  20. Nashimoto Keiichi,JPX ; Masuda Atsushi,JPX, Oriented ferroelectric thin-film element and manufacturing method therefor.
  21. Wessels, Bruce W.; Hoerman, Brent H.; Niu, Feng, Oxide thin films and composites and related methods of deposition.
  22. McKee Rodney Allen (Kingston TN) Walker Frederick Joseph (Oak Ridge TN), Process for growing a film epitaxially upon a MgO surface.
  23. McKee Rodney Allen ; Walker Frederick Joseph, Process for growing a film epitaxially upon an oxide surface and structures formed with the process.
  24. McKee Rodney Allen ; Walker Frederick Joseph, Process for growing a film epitaxially upon an oxide surface and structures formed with the process.
  25. McKee Rodney Allen ; Walker Frederick Joseph, Process for growing a film epitaxially upon an oxide surface and structures formed with the process.
  26. McKee Rodney Allen ; Walker Frederick Joseph, Process for growing a film epitaxially upon an oxide surface and structures formed with the process.
  27. Kim, Yun-Soo; Lee, Sun-Sook; Lee, Sung-Yong, Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide butter layer.
  28. Eisenbeiser,Kurt; Wang,Jun; Droopad,Ravindranath, Semiconductor device and method.
  29. Yu,Zhiyi; Droopad,Ravindranath, Semiconductor structure exhibiting reduced leakage current and method of fabricating same.
  30. Eisenbeiser, Kurt; Foley, Barbara M.; Finder, Jeffrey M.; Thompson, Danny L., Semiconductor structure including a partially annealed layer and method of forming the same.
  31. Ramdani,Jamal; Droopad,Ravindranath; Hilt,Lyndee L.; Eisenbeiser,Kurt Williamson, Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.
  32. McKee Rodney Allen ; Walker Frederick Joseph, Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material.
  33. Ramdani,Jamal; Hilt,Lyndee L., Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate.
  34. Emrick, Rudy M.; Bosco, Bruce Allen; Holmes, John E.; Franson, Steven James; Rockwell, Stephen Kent, Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same.
  35. Eisenbeiser, Kurt W.; Yu, Zhiyi; Droopad, Ravindranath, Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same.
  36. Holm, Paige M.; Barenburg, Barbara Foley; Yamamoto, Joyce K.; Richard, Fred V., Structure and method for fabricating semiconductor microresonator devices.
  37. Lempkowski,Robert; Chason,Marc, Structure and method for fabricating semiconductor structures and devices for detecting an object.
  38. Tungare,Aroon; Klosowiak,Tomasz L., Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials.
  39. Valliath, George, Structure and method for fabrication for a solid-state lighting device.
  40. Emrick, Rudy M.; Rockwell, Stephen Kent; Holmes, John E., Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates.
  41. Beratan Howard R. ; Hanson Charles M., Thermal detector with stress-aligned thermally sensitive element and method.
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