[특허]Metal chemical vapor deposition process using a shadow ring

Metal chemical vapor deposition process using a shadow ring 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-015/04
출원번호	US-0972674 (1992-11-06)
발명자 / 주소	Ghanayem Steve (Sunnyvale CA) Rana Virendra (Los Gatos CA)
출원인 / 주소	Applied Materials, Inc. (Santa Clara CA 02)
인용정보	피인용 횟수 : 91 인용 특허 : 0

초록 ▼

An improved process is disclosed for depositing a layer of metal on a semiconductor wafer wherein a shadow ring normally engages the end edge of the front surface of the wafer to inhibit deposition of the metal on the backside of the wafer and a barrier or nucleation layer is deposited on the unshielded portion of the front surface of the wafer prior to the deposition of the metal layer thereon, and wherein gases used to form the metal layer may contact and react with underlying materials on the front surface of the wafer beneath the shadow ring. The improvement in the process comprises depositing the barrier layer over the entire front surface of the wafer while the wafer and the shadow ring are spaced apart; and then depositing the metal layer on the front surface of the wafer, while engaging the shadow ring with the wafer to inhibit deposition on the backside of the wafer; whereby the deposition of the barrier layer over the entire front surface of the wafer will shield underlying materials on the front surface of the wafer beneath the shadow ring from reaction with one or more of the gases used in the deposition of the metal layer.

대표청구항 ▼

An improved process for depositing a layer of material on a substrate in a deposition chamber using a shadow ring to engage an outer edge of a front surface of the substrate to inhibit deposition of said layer of material on a backside of said substrate comprising: a) depositing a barrier layer on all of said front surface of said substrate while said shadow ring and said substrate are spaced apart; b) then engaging the shadow ring with said outer edge of said front surface of said substrate to inhibit flow of deposition gases toward said backside of said substrate; and c) then depositing said layer of material on said front surface of the substrate not engaged by said shadow ring; whereby said deposition of said barrier layer over all of said front surface of said substrate will shield materials beneath said barrier layer on said front surface of said beneath the shadow ring from reaction with one or more of said deposition gases used in said deposition of said layer of material.

이 특허를 인용한 특허 (91)

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

Metal chemical vapor deposition process using a shadow ring 원문보기

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Metal chemical vapor deposition process using a shadow ring 원문보기

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