$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

ESD protection circuit 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/78
  • H01L-027/02
출원번호 US-0991702 (1992-12-17)
발명자 / 주소
  • Chan Tsiu C. (Carrollton TX) Culver David S. (The Colony TX)
출원인 / 주소
  • SGS Thomson Microelectronics, Inc. (Carrollton TX 02)
인용정보 피인용 횟수 : 53  인용 특허 : 0

초록

An ESD protection circuit and structure for integrated circuit devices uses a lateral NPN transistor to provide a low resistance discharge path for ESD transient voltages. A preferred structure also includes a modification to an N-channel output drive transistor to eliminate the parasitic bipolar tr

대표청구항

An electrostatic discharge protection circuit for a semiconductor integrated circuit, comprising: an input/output bonding pad; an output driver connected to said bonding pad; a bipolar transistor connected to said bonding pad, wherein a high voltage on said bonding pad causes said bipolar transistor

이 특허를 인용한 특허 (53)

  1. Walker, Andrew; Puchner, Helmut, Capacitor triggered silicon controlled rectifier.
  2. Kowshik Vikram ; Yu Andy Teng-Feng, Charge pump.
  3. Walker, Andrew J.; Puchner, Helmut; Kutz, Harold M.; Shutt, James H., Circuits providing ESD protection to high voltage laterally diffused metal oxide semiconductor (LDMOS) transistors.
  4. Ker, Ming-Dou; Wu, Mau-Lin, Device layout to improve ESD robustness in deep submicron CMOS technology.
  5. Ransijn, Johannes G., Distributed electrostatic discharge protection circuit.
  6. Ransijn, Johannes G., Distributed electrostatic discharge protection circuit.
  7. Jang, Kevin; Phan, Bill; Puchner, Helmut, Drain extended MOS transistor with increased breakdown voltage.
  8. Woo,Agnes Neves; Chen,Chun Ying, ESD configuration for low parasitic capacitance I/O.
  9. Watt Jeffrey ; Walker Andrew, ESD protection apparatus having floating ESD bus and semiconductor structure.
  10. Walker, Andrew J., ESD protection device with charge collections regions.
  11. Woo, Agnes Neves, ESD protection for high voltage applications.
  12. Woo,Agnes Neves, ESD protection for high voltage applications.
  13. Gallagher, Kevin; Murphy, Gerald; Walker, Andrew, Electrostatic discharge (ESD) circuit and method that includes P-channel device in signal path.
  14. Oh Sae-Choon,KRX, Electrostatic discharge protection circuits including circumferential guard rings.
  15. Lee Hyeok Jae,KRX ; Huh Yun Jong,KRX, Electrostatic discharge protection device.
  16. Hidechika Kawazoe JP; Eiji Aoki JP; Sheng Teng Hsu ; Katsumasa Fujii JP, Electrostatic discharge protection device for semiconductor integrated circuit method for producing the same and electrostatic discharge protection circuit using the same.
  17. Kawazoe, Hidechika; Aoki, Eiji; Hsu, Sheng Teng; Fujii, Katsumasa, Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same.
  18. Kawazoe, Hidechika; Aoki, Eiji; Hsu, Sheng Teng; Fujii, Katsumasa, Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same.
  19. Ellis Denis,IEX, Electrostatic discharge protection network and method.
  20. Watt Jeffrey, Fast turn-on silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection.
  21. Ko, U-Ming, Input/output architecture for integrated circuits with efficient positioning of integrated circuit elements.
  22. Duncan, Ralph; Kwan, Tom W., Integrated VCO having an improved tuning range over process and temperature variations.
  23. Duncan,Ralph; Kwan,Tom W., Integrated VCO having an improved tuning range over process and temperature variations.
  24. Chang, James Y. C., Integrated spiral inductor.
  25. Behzad, Arya R., Large gain range, high linearity, low noise MOS VGA.
  26. Behzad, Arya R., Large gain range, high linearity, low noise MOS VGA.
  27. Behzad,Arya R., Large gain range, high linearity, low noise MOS VGA.
  28. Ker Ming-Dou (Tainan TWX) Wu Tain-Shun (Miou-Lee TWX), Latchup-free fully-protected CMOS on-chip ESD protection circuit.
  29. Lee Jian-Hsing,TWX, Low voltage turn-on SCR for ESD protection.
  30. Amerasekera Ajith (Plano TX) Chatterjee Amitava (Plano TX), Method of forming a controlled low collector breakdown voltage transistor for ESD protection circuits.
  31. Chang, James Y. C., Multi-track integrated circuit inductor.
  32. Chang, James Y. C., Multi-track integrated spiral inductor.
  33. Ker Ming-Dou,TWX ; Wu Tain-Shun,TWX ; Wang Kuo-Feng,TWX, N-sided polygonal cell layout for multiple cell transistor.
  34. Ker Ming-Dou,TWX, Output ESD protection with high-current-triggered lateral SCR.
  35. Pendse Rajendra D. ; Horner Rita, Radially staggered bond pad arrangements for integrated circuit pad circuitry.
  36. Hatano, Keisuke; Nakashiba, Yasutaka, Semiconductor device protection circuit whose operation is stabilized.
  37. Lee Chang Hyuk,KRX ; Jeong Jae Goan,KRX, Semiconductor device with ESD protective circuit.
  38. Sommer, Michael, Semiconductor device with channel switching structure and method of making same.
  39. Walker, Andrew J.; Puchner, Helmut, Silicon controlled rectifier electrostatic discharge clamp for a high voltage laterally diffused MOS transistor.
  40. Agnes N. Woo ; Kenneth R. Kindsfater ; Fang Lu, System and method for ESD Protection.
  41. Woo, Agnes N.; Kindsfater, Kenneth R.; Lu, Fang, System and method for ESD protection.
  42. Woo, Agnes N.; Kindsfater, Kenneth R.; Lu, Fang, System and method for ESD protection.
  43. Woo, Agnes N.; Kindsfater, Kenneth R.; Lu, Fang, System and method for ESD protection.
  44. Woo, Agnes N.; Kindsfater, Kenneth R.; Lu, Fang, System and method for ESD protection.
  45. Woo, Agnes N.; Kindsfater, Kenneth R.; Lu, Fang, System and method for ESD protection.
  46. Woo,Agnes N.; Kindsfater,Kenneth R.; Lu,Fang, System and method for ESD protection.
  47. Woo,Agnes N.; Kindsfater,Kenneth R.; Lu,Fang, System and method for ESD protection.
  48. Khorramabadi, Haideh, System and method for linearizing a CMOS differential pair.
  49. Khorramabadi,Haideh, System and method for linearizing a CMOS differential pair.
  50. Khorramabadi,Haideh, System and method for linearizing a CMOS differential pair.
  51. Ralph Duncan ; Tom W. Kwan, System and method for narrow band PLL tuning.
  52. Roger, Frederic; Reinprecht, Wolfgang, Transistor assembly as an ESD protection measure.
  53. Ker,Ming Dou; Chuang,Che Hao, Turn-on-efficient bipolar structures for on-chip ESD protection.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로