$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

High density interconnect structure including a chamber 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/02
  • H01L-023/12
출원번호 US-0141460 (1993-10-25)
발명자 / 주소
  • Wojnarowski Robert J. (Ballston Lake NY) Eichelberger Charles W. (Schenectady NY) Kornrumpf William P. (Albany NY)
출원인 / 주소
  • General Electric Company (Schenectady NY 02)
인용정보 피인용 횟수 : 57  인용 특허 : 0

초록

A high density interconnect structure is rendered suitable for the packaging of overlay sensitive chips by providing a cavity in the high density interconnect structure which spaces the sensitive surface of such chips from the overlying high density interconnect structure in a manner which prevents

대표청구항

In a high density interconnected system including at least one electronic chip having an upper surface defining a plane, a high density interconnect (HDI) structure including a first dielectric layer of dielectric material bonded to said chip and a first pattern of HDI conductors disposed on or in s

이 특허를 인용한 특허 (57)

  1. Saxelby ; Jr. John R. ; Hedlund ; III Walter R., Apparatus for circuit encapsulation.
  2. Glenn, Thomas P.; Webster, Steven; Liebhard, Markus K., Chip size image sensor bumped package.
  3. Glenn, Thomas P.; Webster, Steven; Liebhard, Markus K., Chip size image sensor bumped package fabrication method.
  4. Glenn, Thomas P.; Webster, Steven; Liebhard, Markus K., Chip size image sensor wirebond package fabrication method.
  5. John R. Saxelby, Jr. ; Walter R. Hedlund, III, Circuit encapsulation.
  6. Saxelby, Jr., John R.; Hedlund, III, Walter R., Circuit encapsulation.
  7. Saxelby ; Jr. John R. ; Hedlund ; III Walter R., Circuit encapsulation process.
  8. Hanson David A., Electrical means for extracting layer to layer registration.
  9. Fischer Paul J. ; Korleski Joseph, Electronic chip package.
  10. Fischer, Paul J.; Korleski, Joseph E., Electronic chip package.
  11. Park, Chan Woo; Koo, Jae Bon; Lim, Sang Chul; Oh, Ji-Young; Jung, Soon-Won, Electronic circuit and method of fabricating the same.
  12. Khandros Igor Y. ; Eldridge Benjamin N. ; Mathieu Gaetan L., Fabricating interconnects and tips using sacrificial substrates.
  13. Iovdalsky Viktor Anatolievich,RUX ; Aizenberg Eduard Volfovich,RUX ; Beil Vladimir Iliich,RUX, Hybrid high-power microwave-frequency integrated circuit.
  14. Gardner,Donald S., Inductors for integrated circuits.
  15. Gardner,Donald S., Inductors for integrated circuits.
  16. Otsuki, Tetsuya, Interconnect substrate, semiconductor device, methods of manufacturing the same, circuit board, and electronic equipment.
  17. Otsuki,Tetsuya, Interconnect substrate, semiconductor device, methods of manufacturing the same, circuit board, and electronic equipment.
  18. Khandros Igor Y. ; Mathieu Gaetan L., Interconnection substrates with resilient contact structures on both sides.
  19. Noddin David B., Laser apparatus having improved via processing rate.
  20. Swenson Edward J. ; Sun Yunlong ; Harris Richard S., Laser based method and system for integrated circuit repair or reconfiguration.
  21. Pogge H. Bernhard ; Davari Bijan ; Greschner Johann,DEX ; Kalter Howard L., Method for fabricating a very dense chip package.
  22. Hanson David A., Method for reducing via inductance in an electronic assembly and article.
  23. Noddin David B. ; Hutchins Donald G., Method for using fiducial schemes to increase nominal registration during manufacture of laminated circuit.
  24. Noddin David B., Method for using photoabsorptive coatings and consumable copper to control exit via redeposit as well as diameter variance.
  25. Noddin David B. ; Gorrell Robin E. ; Leaf Michael R., Method for using ultrasonic treatment in combination with UV-lasers to enable plating of high aspect ratio micro-vias.
  26. Chua,Swee Kwang; Low,Siu Waf; Chia,Yong Poo; Eng,Meow Koon; Neo,Yong Loo; Boon,Suan Jeung; Huang,Suangwu; Zhou,Wei, Method of making multichip wafer level packages and computing systems incorporating same.
  27. Noddin David B., Method of sequential laser processing to efficiently manufacture modules requiring large volumetric density material rem.
  28. Noddin David B., Method to correct astigmatism of fourth yag to enable formation of sub 25 micron micro-vias using masking techniques.
  29. Eldridge, Benjamin N.; Grube, Gary W.; Khandros, Igor Y.; Mathieu, Gaetan L., Microelectronic contact structure.
  30. Eldridge, Benjamin N.; Grube, Gary W.; Khandros, Igor Y.; Mathieu, Gaetan L., Microelectronic contact structure and method of making same.
  31. Fjelstad Joseph ; Smith John W., Microelectronic lead structures with dielectric layers.
  32. Chua, Swee Kwang; Low, Siu Waf; Chia, Yong Poo; Eng, Meow Koon; Neo, Yong Loo; Boon, Suan Jeung; Huang, Suangwu; Zhou, Wei, Multi-chip wafer level system packages and methods of forming same.
  33. Chua,Swee Kwang; Low,Siu Waf; Chia,Yong Poo; Eng,Meow Koon; Neo,Yong Loo; Boon,Suan Jeung; Huang,Suangwu; Zhou,Wei, Multichip wafer level packages and computing systems incorporating same.
  34. Noddin David B., Multiple frequency processing to minimize manufacturing variability of high aspect ratio micro through-vias.
  35. Noddin David B., Multiple frequency processing to minimize manufacturing variability of high aspect ratio micro through-vias.
  36. Noddin David B., Multiple frequency processing to minimize manufacturing variability of high aspect ratio micro through-vias.
  37. Jung,Kyu dong; Kim,Woon bae; Song,In sang; Lee,Moon chul; Hwang,Jun sik; Ham,Suk jin, Packaging chip and packaging method thereof.
  38. Pogge H. Bernhard ; Iyer Subramania S., Process for precise multichip integration and product thereof.
  39. Noguchi, Mitsutoshi, Recording head and method for manufacturing the same.
  40. Izuno, Kunihiro; Sofue, Shinsuke, Semiconductor device and method for manufacturing the same.
  41. Jeong, Moon Chea; Kim, Young Dae, Semiconductor device packages having semiconductor chips attached to circuit boards, and stack packages using the same.
  42. Yoshihara Shinji,JPX ; Inomata Sumitomo,JPX ; Atsumi Kinya,JPX ; Sakai Minekazu,JPX ; Shimoyama Yasuki,JPX ; Fujii Tetsuo,JPX, Semiconductor device with a protective sheet to affix a semiconductor chip.
  43. Noddin David B., Semiconductor flip chip package.
  44. Lee Seon Goo,KRX, Semiconductor package having light, thin, simple and compact structure.
  45. Jiang, Tongbi, Semiconductor substrate for build-up packages.
  46. Jiang, Tongbi, Semiconductor substrate for build-up packages.
  47. Jiang,Tongbi, Semiconductor substrate for build-up packages.
  48. Jiang,Tongbi, Semiconductor substrate for build-up packages.
  49. Dozier ; II Thomas H. ; Khandros Igor Y., Solder preforms.
  50. Pogge H. Bernhard ; Iyer Subramania S., Structure for precision multichip assembly.
  51. Pogge H. Bernhard ; Davari Bijan ; Greschner Johann,DEX ; Kalter Howard L., Very dense chip package.
  52. Pogge H. Bernhard ; Greschner Johann,DEX ; Kalter Howard Leo ; Rosner Raymond James, Very dense integrated circuit package.
  53. Pogge H. Bernhard ; Greschner Johann,DEX ; Kalter Howard Leo ; Rosner Raymond James, Very dense integrated circuit package and method for forming the same.
  54. Dalton, James; Single, Peter; Money, David, Virtual wire assembly having hermetic feedthroughs.
  55. Pogge H. Bernhard, Wafer thickness compensation for interchip planarity.
  56. Pogge, H. Bernhard, Wafer thickness compensation for interchip planarity.
  57. Fillion Raymond A. (Schenectady NY) Mueller Otward M. (Ballston Lake NY) Burgess James F. (Schenectady NY), Wireless radio frequency power semiconductor devices using high density interconnect.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로