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Apparatus for applying ultrasonic energy in precision cleaning 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B08B-011/02
출원번호 US-0967261 (1992-10-27)
발명자 / 주소
  • Smith Charles W. (Fairview PA) Stanford
  • Jr. Thomas B. (San Pedro CA)
출원인 / 주소
  • Autoclave Engineers, Inc. (Erie PA 02) Hughes Aircraft Company (Los Angeles CA 02)
인용정보 피인용 횟수 : 52  인용 특허 : 0

초록

An apparatus for applying ultrasonic energy in precision cleaning includes a pressure vessel having a plurality of sonic plates, with or without a rotary device located inside the vessel. The plates may be arranged centrally within the vessel to propagate sonic waves outward, or the plates may be lo

대표청구항

An apparatus for applying ultrasonic energy to a workpiece, comprising: a pressure vessel having a cylindrical wall, a bottom wall and a cover enclosing an elongate workspace, a longitudinal axis of the vessel passing through the workspace; a cleaning fluid comprising liquified carbon dioxide within

이 특허를 인용한 특허 (52)

  1. Mount, David J., Adding energy to a cleaning process fluid for removing photo resist, residues and particles from semiconductor substrates, photo masks, reticles, disks and flat-panel displays.
  2. Frattini, Paul L.; Varrin, Robert Douglas; Hunt, Edwin Stephen, Apparatus and method for ultrasonically cleaning irradiated nuclear fuel assemblies.
  3. Hahn, Christopher; Lee, Hanjoo, Apparatus for ejecting fluid onto a substrate and system and method incorporating the same.
  4. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of a workpiece.
  5. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of multiple workpieces.
  6. Wohlgemuth, Oliver, Cleaning device for rotationally symmetrical bodies.
  7. DeSimone Joseph M. ; Romack Timothy ; Betts Douglas E. ; McClain James B., Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants.
  8. DeSimone Joseph M. ; Romack Timothy J. ; Betts Douglas E. ; McClain James B., Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants.
  9. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.
  10. Reber, Daniel; Loher, Urs; Skidmore, Aaron, Device and method for temperature compensation testing of digital load cells.
  11. Kuo, Tzu-Chen, Fluid driven agitator used in densified gas cleaning system.
  12. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.
  13. Sutton, Thomas R.; Biberger, Maximilan A., High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism.
  14. Jones, William D., High pressure fourier transform infrared cell.
  15. Biberger, Maximilian A.; Layman, Frederick Paul; Sutton, Thomas Robert, High pressure processing chamber for semiconductor substrate.
  16. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.
  17. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  18. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  19. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.
  20. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.
  21. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.
  22. Montierth,Garry L.; Miranda,Henry R.; Maraviov,Sharyl L.; Busnaina,Ahmed A., Method and apparatus to process substrates with megasonic energy.
  23. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.
  24. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.
  25. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.
  26. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.
  27. Bran, Mario E., Method for megasonic processing of an article.
  28. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.
  29. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.
  30. Biberger, Maximilian A.; Schilling, Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.
  31. Biberger,Maximilian A.; Schilling,Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.
  32. Bran, Mario E., Method of manufacturing integrated circuit devices.
  33. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.
  34. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.
  35. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.
  36. Wuester,Christopher D., Process flow thermocouple.
  37. Steven L. Peace ; Paul Z. Wirth ; Eric Lund, Reactor for processing a workpiece using sonic energy.
  38. Mullee, William H.; de Leeuwe, Marc; Roberson, Jr., Glenn A., Removal of CMP residue from semiconductor substrate using supercritical carbon dioxide process.
  39. Mullee William H. ; de Leeuwe Marc ; Roberson ; Jr. Glenn A., Removal of CMP residue from semiconductors using supercritical carbon dioxide process.
  40. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
  41. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
  42. William H. Mullee ; Maximilian A. Biberger ; Paul E. Schilling, Removal of photoresist and residue from substrate using supercritical carbon dioxide process.
  43. Koch Robert, Removal of polishing residue from substrate using supercritical fluid process.
  44. Mullee William H., Removal of resist or residue from semiconductors using supercritical carbon dioxide.
  45. Ching, Gil; Perrut, Vincent; Ruch, Vincent; Fresquet, Gilles, Substrate processing apparatus for processing substrates using dense phase gas and sonic waves.
  46. Joyce, Patrick C.; Tipton, Adrianne; Shrinivasan, Krishnan; Hess, Dennis W.; Myneni, Satyanarayana; Levitin, Galit, Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials.
  47. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.
  48. Bran, Mario E., System for megasonic processing of an article.
  49. McDermott,Wayne Thomas; Roth,Dean Van John; Ockovic,Richard Carl, Transmission of ultrasonic energy into pressurized fluids.
  50. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
  51. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.
  52. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.
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