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Semiconductor device and a method of manufacturing thereof

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/01
  • H01L-029/10
  • H01L-027/02
  • H01L-023/48
출원번호 US-0770041 (1991-10-03)
우선권정보 JP-0271727 (1990-10-09)
발명자 / 주소
  • Yamaguchi Yasuo (Hyogo JPX) Ajika Natsuo (Hyogo JPX) Yamano Tsuyoshi (Hyogo JPX)
출원인 / 주소
  • Mitsubishi Denki Kabushiki Kaisha (Tokyo JPX 03)
인용정보 피인용 횟수 : 91  인용 특허 : 0

초록

A semiconductor device of a field effect transistor having an SOI structure is formed as below. Using a gate electrode 20 as a mask, n type impurities are implanted into an SOI layer of p type to form additional source/drain regions of intermediate concentration. Then, a relatively thin sidewall spa

대표청구항

A semiconductor device comprising: a semiconductor layer formed on an insulator layer, a channel region of a first conductivity type formed in said semiconductor layer, first source/drain regions of a second conductivity type formed in said semiconductor layer adjacent to the left and right sides of

이 특허를 인용한 특허 (91)

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