이 특허를 인용한 특허 (40)

1. Freitag, James Mac; Gill, Hardayal Singh; Pinarbasi, Mustafa Michael, Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers.

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2. Parkin Stuart S. P. (San Jose CA), Digital magnetoresistive sensor based on the giant magnetoresistance effect.

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3. Smith Neil (San Diego CA), Dual magnetoresistive reproduce head utilizing multilayer magnetoresistive sensing elements.

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4. Holloway Henry ; Kubinski David John, Giant magnetoresistors with high sensitivity and reduced hysteresis.

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5. Kubinski David John ; Holloway Henry, Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers.

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6. Gill,Hardayal Singh, High HC reference layer structure for self-pinned GMR heads.

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7. Abraham David William ; Gallagher William Joseph ; Trouilloud Philip Louis, Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices.

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8. David William Abraham ; William Joseph Gallagher ; Philip Louis Trouilloud, Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices.

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9. Mori,Kaoru; Kamijo,Atsushi, Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film.

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10. Mori,Kaoru; Kamijo,Atsushi, Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film.

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11. Parkin Stuart Stephen Papworth ; Thompson David Allen, Laminated magnetic structures with ultra-thin transition metal spacer layers.

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12. Abraham David William ; Trouilloud Philip Louis, Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices.

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13. Abraham, David William; Batson, Philip Edward; Slonczewski, John; Trouilloud, Philip Louis; Gallagher, William Joseph; Parkin, Stuart, Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices.

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14. David William Abraham ; Philip Edward Batson ; William Joseph Gallagher ; Stuart Parkin ; John Slonczewski ; Philip Louis Trouilloud, Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices.

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15. Parkin Stuart Stephen Papworth, Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films.

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16. Heide, Carsten, Magnetic memory device.

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17. Heide, Carsten, Magnetic memory device employing giant magnetoresistance effect.

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18. Abraham David William ; Gallagher William Joseph ; Trouilloud Philip Louis, Magnetic memory devices having multiple magnetic tunnel junctions therein.

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19. Robert John Wilson, Magnetic particles having two antiparallel ferromagnetic layers and attached affinity recognition molecules.

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20. Parkin, Stuart S. P.; Samant, Mahesh G., Magnetic random access memory with thermally stable magnetic tunnel junction cells.

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21. Araki, Satoru; Sano, Masashi; Tsuchiya, Yoshihiro, Magnetic transducer and thin film magnetic head.

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22. Parkin Stuart Stephen Papworth, Magnetic tunnel junction device with improved fixed and free ferromagnetic layers.

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23. Iwasaki Hitoshi (Yokohama JPX) Ohsawa Yuichi (Yokohama JPX) Kondoh Reiko (Yokohama JPX) Hashimoto Susumu (Ebina JPX) Sawabe Atsuhito (Yokosuka JPX) Kamiguchi Yuzo (Yokohama JPX) Sahashi Masashi (Yoko, Magnetoresistance effect element.

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24. Masashi Sano JP; Yoshihiro Tsuchiya JP; Satoru Araki JP, Magnetoresistance effect film and magnetoresistance effect type head having specified antiferromagnetic promote layer.

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25. Dahlberg E. Dan ; Moran Timothy J., Magnetoresistance sensor having minimal hysteresis problems.

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26. Lee Wen Yaung ; Mauri Daniele, Magnetoresistive (MR) sensor with coefficient enhancing that promotes thermal stability.

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27. Tchertkov Igor ; Klinkhamer Jon, Magnetoresistive displacement sensor and variable resistor using a moving domain wall.

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28. Yamamoto Hidefumi,JPX ; Hayashi Kazuhiko,JPX ; Nakada Masafumi,JPX ; Fujikata Jun-Ichi,JPX ; Ishihara Kunihiko,JPX, Magnetoresistive effect element having magnetoresistive layer and underlying metal layer.

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29. Kitagawa, Eiji; Ochiai, Takao, Magnetoresistive element and magnetic memory.

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30. Dieny Bernard (Grenoble Cedex FRX) Gurney Bruce A. (Santa Clara CA) Parkin Stuart S. P. (San Jose CA) Sanders Ian L. (Morgan Hill CA) Speriosu Virgil S. (San Jose CA) Wilhoit Dennis R. (Morgan Hill C, Magnetoresistive sensor having multilayer thin film structure.

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31. Von Helmolt Rittmar (Erlangen DEX) Wecker Joachim (Roettenbach DEX), Magnetoresistive sensor utilizing a sensor material with a perovskite-like crystal structure.

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32. Kagami,Takeo; Kanaya,Takayasu; Kasahara,Noriaki; Sato,Kazuki, Manufacturing method of a thin-film magnetic head.

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33. Wilson Robert John, Microfabricated magnetic particles for applications to affinity binding.

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34. Schrott, Alejandro Gabriel; Gambino, Richard Joseph; Von Gutfeld, Robert Jacob, Modulation of the resonant frequency of a circuit using an energy field.

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35. Schrott,Alejandro Gabriel; Gambino,Richard Joseph; Von Gutfeld,Robert Jacob, Modulation of the resonant frequency of a circuit using an energy field.

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36. James M. Daughton ; Arthur V. Pohm, Read heads in planar monolithic integrated circuit chips.

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37. Gill,Hardayal Singh, Self-pinned CPP sensor using Fe/Cr/Fe structure.

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38. Pinarbasi Mustafa, Spin valve with improved capping layer structure.

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39. Dahlberg E. Dan ; Moran Timothy J., Spin-valve magnetoresistance sensor having minimal hysteresis problems.

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40. Gill Hardayal Singh, Ultra high density GMR sensor.

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