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Thin-layer field-effect transistors with MIS structure whose insulator and semiconductor are made of organic materials

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/28
출원번호 US-0966048 (1993-03-01)
우선권정보 FR-0008488 (1990-07-04)
국제출원번호 PCT/FR91/00541 (1991-07-04)
§371/§102 date 19930103 (19930103)
국제공개번호 WO-9201313 (1992-01-23)
발명자 / 주소
  • Garnier Francis (Champigny FRX) Horowitz Gilles (Villebon sur Yvette FRX) Fichou Denis (Paris FRX)
출원인 / 주소
  • Centre National de la Recherche Scientifique (CNRS) (Paris FRX 07)
인용정보 피인용 횟수 : 160  인용 특허 : 0

초록

A thin-layer field-effect transistor (TFT) with an MIS structure includes a thin semiconductor layer between a source and a drain. The thin semiconductor layer is in contact with one surface of a thin layer made of insulating material, and in contact by its other surface with a conducting grid. The

대표청구항

A thin-layer field-effect transistor (TFT) with an MIS structure comprising a thin semiconductor layer between a source and a drain, said thin semiconductor layer being in contact with one surface of a thin layer made of insulating material, and said thin insulating layer being in contact by its oth

이 특허를 인용한 특허 (160)

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