이 특허를 인용한 특허 (28)

1. Enicks, Darwin Gene; Carver, Damian, Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization.

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2. Enicks,Darwin Gene; Carver,Damian, Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement.

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3. Krutsick, Thomas J., Bipolar transistor having an emitter comprised of a semi-insulating material.

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4. Leland S. Swanson ; Gregory E. Howard, Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer.

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5. Swanson, Leland S.; Howard, Gregory E., Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer.

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6. Kawabata,Osamu; Nakano,Koji; Utsumi,Jun, DC/DC converter using bipolar transistor, method of manufacturing the same and DC power supply module using the same.

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7. Ning,Tak Hung, Graded-base-bandgap bipolar transistor having a constant--bandgap in the base.

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8. Washio, Katsuyoshi; Hayami, Reiko; Shimamoto, Hiromi; Kondo, Masao; Oda, Katsuya; Oue, Eiji; Tanabe, Masamichi, Heterojunction bipolar transistor.

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9. Washio, Katsuyoshi; Hayami, Reiko; Shimamoto, Hiromi; Kondo, Masao; Oda, Katsuya; Oue, Eiji; Tanabe, Masamichi, Heterojunction bipolar transistor.

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10. Legoues Francoise Kolmer ; Meyerson Bernard Steele, Low defect density/arbitrary lattice constant heteroepitaxial layers.

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11. Enicks,Darwin Gene, Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement.

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12. Ratnakumar, Albert; Xu, Yanzhong, Methods for fabricating PNP bipolar junction transistors.

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13. Adam, Thomas N.; Chidambarrao, Dureseti, Mobility enhancement in SiGe heterojunction bipolar transistors.

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14. Furukawa, Toshiharu; Mandelman, Jack A.; Moy, Dan; Park, Byeongju; Tonti, William R., SOI hybrid structure with selective epitaxial growth of silicon.

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15. Park, Jeagun; Tomizawa, Kenji; Lee, Gonsub; Kamiyama, Eiji, SOI structure having a SiGe layer interposed between the silicon and the insulator.

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16. Park,Jeagun; Tomizawa,Kenji; Lee,Gonsub; Kamiyama,Eiji, SOI structure having a SiGe layer interposed between the silicon and the insulator.

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17. Aoki, Shigetaka, Semiconductor device.

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18. Miura, Makoto; Washio, Katsuyoshi; Shimamoto, Hiromi, Semiconductor device and manufacturing method of the same.

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19. Yamazaki Toru,JPX, Semiconductor device having SiGe spacer under an active layer.

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20. Shiono,Ichiro; Ninomiya,Masaharu; Kougami,Hazumu, Semiconductor substrate and field-effect transistor, and manufacturing method for same.

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21. Franosch, Martin; Meister, Thomas; Schäfer, Herbert; Stengl, Reinhard; Wolf, Konrad, Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor.

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22. Pagette, Francois, Silicon germanium emitter.

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23. Pagette,Francois, Silicon germanium emitter.

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24. Lippert, Gunther; Osten, Hans-Jörg; Heinemann, Bernd, Silicon germanium hetero bipolar transistor.

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25. Lippert,Gunther; Osten,Hans J철rg; Heinemann,Bernd, Silicon germanium hetero bipolar transistor having a germanium concentration profile in the base layer.

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26. Klein, Wolfgang; Lachner, Rudolf; Molzer, Wolfgang, Silicon-germanium bipolar transistor with optimized germanium profile.

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27. Lippert, Gunther; Osten, Hans-Jörg; Heinemann, Bernd, Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact area.

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28. Boles Timothy ; O'Keefe Matthew F. ; Sledziewski John M., Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates.

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