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Plasma cleaning method for removing residues in a plasma treatment chamber 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B08B-007/00
출원번호 US-0176935 (1994-01-03)
발명자 / 주소
  • Chen Ching-Hwa (Milpitas CA) Arnett David (Fremont CA) Liu David (San Jose CA)
출원인 / 주소
  • LAM Research Corporation (Fremont CA 02)
인용정보 피인용 횟수 : 275  인용 특허 : 0

초록 ▼

A plasma cleaning method for removing residues previously formed in a plasma treatment chamber by dry etching layers such as photoresist, barriers, etc., on a wafer. The method includes introducing a cleaning gas mixture of an oxidizing gas and a chlorine containing gas into the chamber followed by

대표청구항 ▼

A plasma cleaning method for removing metal-containing residues in a plasma treatment chamber, comprising: introducing a cleaning gas mixture comprising oxygen gas and a chlorine containing gas into a plasma treatment chamber; and performing a plasma cleaning step by activating the cleaning gas mixt

이 특허를 인용한 특허 (275)

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