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Silicon on insulator device comprising improved substrate doping 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/01
  • H01L-027/12
  • H01L-031/392
출원번호 US-0985976 (1992-12-04)
발명자 / 주소
  • Hwang Jeong-Mo (Plano TX)
출원인 / 주소
  • Texas Instruments Incorporated (Dallas TX 02)
인용정보 피인용 횟수 : 103  인용 특허 : 0

초록 ▼

A silicon on insulator integrated circuit device is provided which comprises a substrate (10), a buried oxide layer (12), and an outer silicon layer (14). A buried p-layer (16) and a buried n-well region (26) are formed in order to position p-n junctions beneath n-channel and p-channel devices respe

대표청구항 ▼

A silicon on insulator device, comprising: a silicon substrate having a predetermined conductivity type; an insulating layer disposed outwardly from and substantially completely covering said silicon substrate; an outer silicon layer disposed outwardly from said insulating layer and separated from s

이 특허를 인용한 특허 (103)

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