이 특허를 인용한 특허 (244)

1. Or-Bach, Zvi; Wurman, Ze'ev, 3D integrated circuit with logic.

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2. Sekar, Deepak C.; Or-Bach, Zvi; Cronquist, Brian, 3D memory semiconductor device and structure.

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3. Or-Bach, Zvi, 3D semiconductor device.

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4. Or-Bach, Zvi, 3D semiconductor device.

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5. Or-Bach, Zvi; Wurman, Zeev, 3D semiconductor device.

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6. Or-Bach, Zvi; Cronquist, Brian; Sekar, Deepak, 3D semiconductor device and structure.

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7. Or-Bach, Zvi; Cronquist, Brian; Sekar, Deepak, 3D semiconductor device and structure.

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8. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian, 3D semiconductor device and structure.

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9. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, 3D semiconductor device and structure.

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10. Sekar, Deepak; Or-Bach, Zvi; Cronquist, Brian, 3D semiconductor device and structure.

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11. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; Wurman, Ze'ev; Lim, Paul, 3D semiconductor device and structure with back-bias.

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12. Or-Bach, Zvi; Wurman, Ze'ev, 3D semiconductor device including field repairable logics.

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13. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Wurman, Zeev, 3D semiconductor device, fabrication method and system.

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14. Or-Bach, Zvi; Widjaja, Yuniarto, 3DIC system with a two stable state memory and back-bias region.

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15. Or-Bach, Zvi; Wurman, Zeev, Automation for monolithic 3D devices.

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16. Lee, Sang-Yun, Bonded semiconductor structure and method of making the same.

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17. Lo Yu-Hwa, Compliant universal substrate for epitaxial growth.

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18. Kazuaki Ohmi JP; Kiyofumi Sakaguchi JP; Kazutaka Yanagita JP, Composite member its separation method and preparation method of semiconductor substrate by utilization thereof.

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19. Ohmi, Kazuaki; Sakaguchi, Kiyofumi; Yanagita, Kazutaka, Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof.

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20. Toriyama,Shigetaka, Electric circuit substrate.

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21. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX ; Sato Nobuhiko,JPX, Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution.

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22. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX ; Sato Nobuhiko,JPX, Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution.

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23. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX ; Sato Nobuhiko,JPX, Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution.

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24. Masaki,Yuichi; Akino,Yutaka, Evaluation apparatus and evaluation method.

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25. Masaki,Yuichi; Akino,Yutaka, Evaluation apparatus and evaluation method.

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26. Atoji Tadashi,JPX, Fabrication process and fabrication apparatus of SOI substrate.

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27. Atoji Tadashi,JPX, Fabrication process for a SOI substrate.

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28. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Fabrication process for a semiconductor substrate.

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29. Kiyofumi Sakaguchi JP; Takao Yonehara JP, Fabrication process of semiconductor substrate.

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30. Ishida,Hiroshi, Film forming apparatus and film forming method.

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31. Nayfeh, Ammar Munir; Chui, Chi On; Saraswat, Krishna C.; Yonehara, Takao, Germanium substrate-type materials and approach therefor.

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32. Nayfeh,Ammar Munir; Chui,Chi On; Saraswat,Krishna C.; Yonehara,Takao, Germanium substrate-type materials and approach therefor.

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33. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian, Integrated circuit device and structure.

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34. Ikeda,Hajime; Sato,Nobuhiko; Sakaguchi,Kiyofumi, Member and member manufacturing method.

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35. Sakaguchi, Kiyofumi; Yonehara, Takao; Omi, Kazuaki; Yanagita, Kazutaka; Miyakogawa, Toshikazu, Member separating apparatus and processing apparatus.

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36. Nobuhiko Sato JP, Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same.

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37. Sato Nobuhiko,JPX, Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same.

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38. Sato, Nobuhiko, Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same.

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39. Yanagita, Kazutaka; Ohmi, Kazuaki; Sakaguchi, Kiyofumi; Kurisu, Hirokazu, Method and apparatus for processing composite member.

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40. Yanagita, Kazutaka; Ohmi, Kazuaki; Sakaguchi, Kiyofumi; Kurisu, Hirokazu, Method and apparatus for processing composite member.

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41. Kazuaki Ohmi JP; Takao Yonehara JP; Kiyofumi Sakaguchi JP; Kazutaka Yanagita JP, Method and apparatus for separating composite member using fluid.

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42. Kazuaki Ohmi JP; Takao Yonehara JP; Kiyofumi Sakaguchi JP; Kazutaka Yanagita JP, Method and apparatus for separating composite member using fluid.

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43. Ohmi, Kazuaki; Yonehara, Takao; Sakaguchi, Kiyofumi; Yanagita, Kazutaka, Method and apparatus for separating composite member using fluid.

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44. Yanagita, Kazutaka; Kohda, Mitsuharu; Sakaguchi, Kiyofumi; Fujimoto, Akira, Method and apparatus for separating member.

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45. Yanagita, Kazutaka; Kohda, Mitsuharu; Sakaguchi, Kiyofumi; Fujimoto, Akira, Method and apparatus for separating member.

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46. Yanagita, Kazutaka; Kohda, Mitsuharu; Sakaguchi, Kiyofumi; Fujimoto, Akira, Method and apparatus for separating member.

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47. Yanagita, Kazutaka; Sakaguchi, Kiyofumi, Method and apparatus for separating sample.

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48. Yanagita,Kazutaka; Sakaguchi,Kiyofumi, Method and apparatus for separating sample.

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49. Or-Bach, Zvi; Wurman, Zeev, Method for design and manufacturing of a 3D semiconductor device.

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50. Or-Bach, Zvi, Method for developing a custom device.

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51. Or-Bach, Zvi; Sekar, Deepak C., Method for fabricating novel semiconductor and optoelectronic devices.

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52. Rha Sa Kyun,KRX ; Cheon Young Il,KRX, Method for fabricating thin film transistors.

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53. Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C.; Or-Bach, Zvi, Method for fabrication of a semiconductor device and structure.

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54. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C., Method for fabrication of a semiconductor device and structure.

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55. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian, Method for fabrication of a semiconductor device and structure.

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56. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.

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57. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.

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58. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.

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59. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Wurman, Ze'ev, Method for fabrication of a semiconductor device and structure.

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60. Sekar, Deepak; Or-Bach, Zvi; Cronquist, Brian, Method for fabrication of a semiconductor device and structure.

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61. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of configurable systems.

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62. Tayanaka, Hiroshi, Method for making a semiconductor substrate comprising a variant porous layer.

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63. Hiroshi Tayanaka JP, Method for making thin film semiconductor.

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64. Isaka, Fumito; Kato, Sho; Komatsu, Ryu; Nei, Kosei; Shimomura, Akihisa, Method for manufacturing SOI substrate.

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65. Yamazaki, Shunpei; Koyama, Masaki; Noda, Kosei; Makino, Kenichiro; Ohnuma, Hideto; Nei, Kosei, Method for manufacturing SOI substrate.

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66. Noda, Kosei; Takeuchi, Toshihiko; Ishikawa, Makoto, Method for manufacturing SOI substrate and semiconductor device.

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67. Ohnuma, Hideto; Hirose, Takashi, Method for manufacturing photoelectric conversion device.

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68. Kato, Sho; Toriumi, Satoshi; Isaka, Fumito; Ohnuma, Hideto, Method for manufacturing semiconductor device.

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69. Kurata, Motomu; Sasagawa, Shinya; Muraoka, Taiga, Method for manufacturing semiconductor substrate.

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70. Xie,Ya Hong, Method for producing dislocation-free strained crystalline films.

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71. Xie,Ya Hong, Method for producing dislocation-free strained crystalline films.

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72. Sato Nobuhiko,JPX ; Matsumura Satoshi,JPX, Method for producing semiconductor base members.

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73. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.

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74. Wu, YewChung Sermon; Lin, PeiYan, Method for transferring epitaxy layer.

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75. Kenji Yamagata JP; Satoshi Matsumura JP, Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate.

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76. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; Wurman, Ze'ev; Lim, Paul, Method of constructing a semiconductor device and structure.

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77. Song, In-Jae; Han, Jai-yong, Method of fabricating GaN substrate.

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78. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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79. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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80. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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81. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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82. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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83. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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84. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.

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85. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.

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86. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.

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87. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.

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88. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C., Method of fabricating a semiconductor device and structure.

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89. Or-Bach, Zvi; Sekar, Deepak; Cronquist, Brian; Wurman, Ze'ev, Method of forming three dimensional integrated circuit devices using layer transfer technique.

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90. Or-Bach, Zvi; Widjaja, Yuniarto, Method of maintaining a memory state.

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91. Miyawaki Mamoru,JPX ; Kawasumi Yasushi,JPX ; Inoue Shunsuke,JPX ; Akino Yutaka,JPX ; Koizumi Toru,JPX ; Kohchi Tetsunobu,JPX, Method of making a semiconductor device using processing from both sides of a workpiece.

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92. Ohnuma, Hideto; Yamazaki, Shunpei, Method of making an SOI substrate by using a separation layer with regions of non-uniform concentration.

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93. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.

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94. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.

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95. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.

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96. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.

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97. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.

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98. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian, Method of manufacturing a semiconductor device and structure.

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99. Yamazaki, Shunpei, Method of manufacturing a semiconductor device having a gate electrode formed over a silicon oxide insulating layer.

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100. Yamazaki, Shunpei, Method of manufacturing a semiconductor device including thermal oxidation to form an insulating film.

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101. Sekar, Deepak C.; Or-Bach, Zvi, Method of manufacturing a semiconductor device with two monocrystalline layers.

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102. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Israel; de Jong, J. L.; Sekar, Deepak C.; Lim, Paul, Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer.

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103. Peidous, Igor; Pellicano, Illaria Katia Marianna, Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition.

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104. Peidous, Igor; Pellicano, Illaria Katia Marianna, Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition.

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105. Isaka, Fumito; Kato, Sho; Dairiki, Koji, Method of manufacturing photoelectric conversion device.

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106. Isaka, Fumito; Kato, Sho; Dairiki, Koji, Method of manufacturing photoelectric conversion device.

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107. Isaka, Fumito; Kato, Sho; Dairiki, Koji, Method of manufacturing photoelectric conversion device.

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108. Isaka, Fumito; Kato, Sho; Nei, Kosei; Komatsu, Ryu; Shimomura, Akihisa; Dairiki, Koji, Method of manufacturing photoelectric conversion device.

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109. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Method of manufacturing semiconductor article.

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110. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX ; Atoji Tadashi,JPX, Method of manufacturing semiconductor article.

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111. Inoue, Junichi; Asakawa, Teruo; Sugiyama, Kazuhiko, Method of manufacturing semiconductor device and manufacturing line thereof.

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112. Yamazaki, Shunpei, Method of manufacturing semiconductor device having island-like single crystal semiconductor layer.

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113. Yonehara, Takao; Watanabe, Kunio; Shimada, Tetsuya; Ohmi, Kazuaki; Sakaguchi, Kiyofumi, Method of manufacturing semiconductor wafer method of using and utilizing the same.

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114. Or-Bach, Zvi; Cronquist, Brian; Sekar, Deepak, Method of processing a semiconductor device.

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115. Takao Yonehara JP; Kunio Watanabe JP; Tetsuya Shimada JP; Kazuaki Ohmi JP; Kiyofumi Sakaguchi JP, Method of producing semiconductor member.

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116. Nakagawa Katsumi,JPX ; Yonehara Takao,JPX ; Nishida Shoji,JPX ; Sakaguchi Kiyofumi,JPX, Method of producing semiconductor member and method of producing solar cell.

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117. Nakagawa, Katsumi; Yonehara, Takao; Nishida, Shoji; Sakaguchi, Kiyofumi, Method of producing semiconductor member and method of producing solar cell.

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118. Yamagata, Kenji, Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device.

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119. Ohmi, Kazuaki; Nakagawa, Katsumi; Sato, Nobuhiko; Sakaguchi, Kiyofumi; Yanagita, Kazutaka; Yonehara, Takao, Method of separating composite member and process for producing thin film.

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120. Or-Bach, Zvi; Wurman, Zeev, Method to construct a 3D semiconductor device.

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121. Or-Bach, Zvi; Wurman, Ze'ev, Method to construct systems.

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122. Or-Bach, Zvi; Wurman, Ze'ev, Method to form a 3D semiconductor device.

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123. Or-Bach, Zvi; Sekar, Deepak; Cronquist, Brian, Method to form a 3D semiconductor device and structure.

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124. Sadaka, Mariam; Radu, Ionut, Methods of providing thin layers of crystalline semiconductor material, and related structures and devices.

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125. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk; Sekar, Deepak C., Monolithic three-dimensional semiconductor device and structure.

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126. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Nonvolatile memory and electronic apparatus.

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127. Kazuaki Omi JP; Takao Yonehara JP; Kiyofumi Sakaguchi JP; Kazutaka Yanagita JP, Object separating apparatus and method, and method of manufacturing semiconductor substrate.

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128. Asami, Yoshinobu; Kataishi, Riho, Photoelectric conversion device.

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129. Yamazaki, Shunpei; Isaka, Fumito; Nishida, Jiro, Photoelectric conversion device.

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130. Shimomura, Akihisa, Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module.

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131. Yanagita, Kazutaka; Kohda, Mitsuharu; Sakaguchi, Kiyofumi; Fujimoto, Akira, Plate member separating apparatus and method.

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132. Iwane Masaaki,JPX ; Yonehara Takao,JPX ; Ohmi Kazuaki,JPX, Process for forming an SOI substrate.

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133. Sakaguchi, Kiyofumi; Yonehara, Takao; Sato, Nobuhiko, Process for manufacturing a semiconductor substrate as well as a semiconductor thin film, and multilayer structure.

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134. Yamagata Kenji,JPX ; Yonehara Takao,JPX, Process for producing a semiconductor substrate.

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135. Kakizaki Yasuo,JPX ; Yonehara Takao,JPX ; Sato Nobuhiko,JPX, Process for producing semiconductor article.

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136. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Process for producing semiconductor article.

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137. Iwasaki Yukiko,JPX ; Nakagawa Katsumi,JPX ; Yonehara Takao,JPX ; Nishida Shoji,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate.

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138. Sato Nobuhiko,JPX, Process for producing semiconductor substrate.

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139. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate by heat treating.

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140. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate by heating to flatten an unpolished surface.

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141. Sato Nobuhiko,JPX ; Yonehara Takao,JPX, Process for producing semiconductor substrate of SOI structure.

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142. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.

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143. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.

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144. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.

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145. Fukunaga,Takeshi, Process for production of SOI substrate and process for production of semiconductor device.

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146. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device including the selective forming of porous layer.

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147. Sakaguchi,Kiyofumi; Yonehara,Takao, Process for production of semiconductor substrate.

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148. Nobuhiko Sato JP, Process of producing semiconductor article.

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149. Yonehara, Takao; Ito, Masataka, Process of reclamation of SOI substrate and reproduced substrate.

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150. Ito, Masataka, SOI annealing method.

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151. Ito, Masataka, SOI annealing method and SOI manufacturing method.

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152. Park, Jeagun; Tomizawa, Kenji; Lee, Gonsub; Kamiyama, Eiji, SOI structure having a SiGe layer interposed between the silicon and the insulator.

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153. Kakehata, Tetsuya; Ohnuma, Hideto; Yamamoto, Yoshiaki; Makino, Kenichiro, SOI substrate and manufacturing method thereof.

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154. Kakehata, Tetsuya; Ohnuma, Hideto; Yamamoto, Yoshiaki; Makino, Kenichiro, SOI substrate and manufacturing method thereof.

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155. Kakehata, Tetsuya; Ohnuma, Hideto; Yamamoto, Yoshiaki; Makino, Kenichiro, SOI substrate and manufacturing method thereof.

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156. Yamagata Kenji,JPX ; Sakaguchi Kiyofumi,JPX, SOI substrate processing method.

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157. Kazutaka Yanagita JP; Takao Yonehara JP; Kazuaki Omi JP; Kiyofumi Sakaguchi JP, Sample separating apparatus and method, and substrate manufacturing method.

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158. Yanagita, Kazutaka; Yonehara, Takao; Omi, Kazuaki; Sakaguchi, Kiyofumi, Sample separating apparatus and method, and substrate manufacturing method.

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159. Yanagita, Kazutaka; Yonehara, Takao; Omi, Kazuaki; Sakaguchi, Kiyofumi, Sample separating apparatus and method, and substrate manufacturing method.

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160. Sekar, Deepak C.; Or-Bach, Zvi, Self aligned semiconductor device and structure.

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161. Or-Bach, Zvi; Lim, Paul; Sekar, Deepak C., Semiconductor and optoelectronic devices.

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162. Or-Bach, Zvi; Sekar, Deepak, Semiconductor and optoelectronic devices.

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163. Or-Bach, Zvi; Sekar, Deepak C., Semiconductor and optoelectronic devices.

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164. Kiyofumi Sakaguchi JP; Takao Yonehara JP, Semiconductor article and method of manufacturing the same.

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165. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Semiconductor article and method of manufacturing the same.

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166. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Semiconductor article with porous structure.

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167. Yamazaki, Shunpei, Semiconductor device.

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168. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.

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169. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.

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170. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.

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171. Or-Bach, Zvi, Semiconductor device and structure.

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172. Or-Bach, Zvi, Semiconductor device and structure.

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173. Or-Bach, Zvi; Cronquist, Brian, Semiconductor device and structure.

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174. Or-Bach, Zvi; Cronquist, Brian, Semiconductor device and structure.

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175. Or-Bach, Zvi; Cronquist, Brian, Semiconductor device and structure.

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