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NTIS 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0055240 (1993-04-28) |
발명자 / 주소 |
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출원인 / 주소 |
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인용정보 | 피인용 횟수 : 54 인용 특허 : 0 |
An improved method is provided for the deposition of high-purity silicon on silicon particles from silicon source gases in a fluidized bed reactor which is divided into a heating zone and a reaction zone by a partition. Silicon particles in the heating zone are fluidized by a carrier gas such as hyd
A method of operating a fluidized bed reactor in which a reaction gas comprising a source material is brought into a fluidized-bed relationship with seed particles on which said source material is to be deposited, comprising the steps of: providing a fluidized bed reactor vessel having a reaction zo
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