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특허 상세정보

Process for the production of thin semiconductor material films

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-021/265   
미국특허분류(USC) 437/24 ; 437/26 ; 437/966 ; 148/DIG ; 12
출원번호 US-0945001 (1992-09-15)
우선권정보 FR-0011491 (1991-09-18)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 951  인용 특허 : 0
초록

Process for the preparation of thin moncrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment (2) of the face (4) of the said wafer (1) by means of ions creating in the volume of said wafer a layer (3) of gaseous microbubbles defining in the volume of said wafer a lower region (6) constituting the mass of the substrate and an upper region (5) constituting the thin film, a secon...

대표
청구항

Process for the preparation of thin semiconductor material films, wherein the process comprises subjecting a semiconductor material wafer having a planar face and whose plane, is substantially parallel to a principal crystallographic plane, to the three following stages: a first stage of implantation by ion bombardment of the face of said wafer by means of ions creating in the volume of said wafer at a depth close to the average penetration depth of said ions, a layer of gaseous microbubbles defining in the volume of said wafer a lower region constitutin...

이 특허를 인용한 특허 피인용횟수: 951

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