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Barrier layers and aluminum contacts 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/324
  • H01L-021/44
  • C23C-014/00
출원번호 US-0017081 (1993-02-12)
발명자 / 주소
  • Ngan Kenny K. (Fremont CA) Ong Edith (Saratoga CA)
출원인 / 주소
  • Applied Materials, Inc. (Santa Clara CA 02)
인용정보 피인용 횟수 : 63  인용 특허 : 0

초록 ▼

In the manufacture of high temperature deposited aluminum contacts onto silicon substrates wherein a barrier layer of titanium nitride is used, the improvement wherein the titanium nitride contains oxygen. The improved contacts are made by depositing a titanium-containing layer onto a silicon substr

대표청구항 ▼

A method of forming an aluminum contact on a silicon substrate comprising the following steps in sequence: a) sputter depositing a titanium-containing layer over said silicon under vacuum; b) annealing said titanium-containing layer in nitrogen under vacuum at a temperature of from about 750°-850°C.

이 특허를 인용한 특허 (63)

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  8. Chopra,Dinesh; Fishburn,Fred, Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby.
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  61. Jeon, Yoo Taek; Chung, Kyeong Woo; Myung, Hyun Sik; Yun, Yong Sik; Park, Jong In; Kim, Eun Young, Stainless steel separator for fuel cell having M/MNx and MOyNz layer and method for manufacturing the same.
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