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Process for forming a multilayer wiring conductor structure in semiconductor device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/443
출원번호 US-0130854 (1993-10-04)
우선권정보 JP-0264462 (1992-10-02)
발명자 / 주소
  • Kano Isao (Tokyo JPX)
출원인 / 주소
  • NEC Corporation (Tokyo JPX 03)
인용정보 피인용 횟수 : 62  인용 특허 : 0

초록

In a process for forming a multilayer wiring conductor structure, an interlayer insulator film is deposited on a surface including an upper surface of a lower layer wiring conductor, and the deposited interlayer insulator film is planarized so as to expose the upper surface of the lower layer wiring

대표청구항

A process for forming a multilayer wiring conductor structure in a semiconductor device, comprising the steps of: forming a power supply film for plating on an insulator film formed on a semiconductor substrate; coating a first photoresist film on said power supply film and patterning said first pho

이 특허를 인용한 특허 (62)

  1. Fleming, Robert; Graydon, Bhret; Vasquez, Daniel; Wu, Junjun; Razavi, Farhad, Circuit elements comprising ferroic materials.
  2. Kosowsky, Lex; Graydon, Bhret; Fleming, Robert, Components having voltage switchable dielectric materials.
  3. Werner Juengling ; Kirk D. Prall ; Ravi Iyer ; Gurtej S. Sandhu ; Guy Blalock, Constructions comprising insulative materials.
  4. Kosowsky, Lex, Current-carrying structures fabricated using voltage switchable dielectric materials.
  5. Jang, Syun-Ming; Liu, Chung-Shi; Yu, Chen-Hua, Damascene method employing composite etch stop layer.
  6. Jang,Syun Ming; Liu,Chung Shi; Yu,Chen Hua, Damascene method employing composite etch stop layer.
  7. Kosowsky, Lex; Fleming, Robert, Device applications for voltage switchable dielectric material having high aspect ratio particles.
  8. Kosowsky, Lex; Fleming, Robert, Device applications for voltage switchable dielectric material having high aspect ratio particles.
  9. Kosowsky, Lex; Fleming, Robert; Graydon, Bhret; Vasquez, Daniel, Electric discharge protection for surface mounted and embedded components.
  10. Kosowsky, Lex; Fleming, Robert, Electronic device for voltage switchable dielectric material having high aspect ratio particles.
  11. Kosowsky, Lex; Fleming, Robert; Graydon, Bhret; Vasquez, Daniel, Embedded protection against spurious electrical events.
  12. Cleeves James M. ; Ramkumar Krishnaswamy, Encapsulated dielectric and method of fabrication.
  13. Kosowsky, Lex; Fleming, Robert, Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same.
  14. Kosowsky, Lex; Fleming, Robert, Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same.
  15. Kosowsky, Lex; Fleming, Robert; Shi, Ning, Geometric and electric field considerations for including transient protective material in substrate devices.
  16. Kosowsky, Lex; Fleming, Robert, Geometric configuration or alignment of protective material in a gap structure for electrical devices.
  17. Choi, DaeSik; Lee, Taewoo; Lee, KyuWon; Cho, SungWon, Integrated circuit packaging system with posts and method of manufacture thereof.
  18. Clampitt Darwin A., Interconnections for semiconductor circuits.
  19. Kosowsky, Lex, Light-emitting device using voltage switchable dielectric material.
  20. Kosowsky, Lex; Fleming, Robert, Light-emitting diode device for voltage switchable dielectric material having high aspect ratio particles.
  21. Feustel, Frank; Frohberg, Kai; Werner, Thomas, Metallization system of a semiconductor device including metal pillars having a reduced diameter at the bottom.
  22. Kosowsky, Lex; Fleming, Robert, Method for electroplating a substrate.
  23. Sandhu Gurtej Sandhu (Boise ID) Yu Chris Chang (Aurora IL), Method for forming a metallization layer.
  24. Sandhu, Gurtej Singh; Yu, Chris Chang, Method for forming a metallization layer.
  25. Sandhu,Gurtej Sandhu; Yu,Chris Chang, Method for forming a metallization layer.
  26. Sandhu,Gurtej Singh; Yu,Chris Chang, Method for forming a metallization layer.
  27. Matsunaga Noriaki,JPX ; Shibata Hideki,JPX ; Matsuno Tadashi,JPX ; Usui Takamasa, Method of forming semiconductor device having an improved buried electrode formed by selective CVD.
  28. Yu, Cheng-Po, Method of manufacturing embedded wiring board.
  29. Kosowsky, Lex, Methods for fabricating current-carrying structures using voltage switchable dielectric materials.
  30. Kosowsky,Lex, Methods for fabricating current-carrying structures using voltage switchable dielectric materials.
  31. Forbes, Leonard; Ahn, Kie Y., Methods of forming an insulating material proximate a substrate, and methods of forming an insulating material between components of an integrated circuit.
  32. Juengling, Werner; Prall, Kirk D.; Iyer, Ravi; Sandhu, Gurtej S.; Blalock, Guy, Methods of forming materials between conductive electrical components, and insulating materials.
  33. Juengling, Werner; Prall, Kirk D.; Iyer, Ravi; Sandhu, Gurtej S.; Blalock, Guy, Methods of forming materials between conductive electrical components, and insulating materials.
  34. Juengling,Werner; Prall,Kirk D.; Iyer,Ravi; Sandhu,Gurtej S.; Blalock,Guy, Methods of forming materials between conductive electrical components, and insulating materials.
  35. Sandhu Gurtej Sandhu ; Yu Chris Chang, Methods of forming metallization layers and integrated circuits containing such.
  36. McDaniel, Terrence; Hineman, Max F., Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry.
  37. Liu Yowjuang W. (San Jose CA) Chang Kuang-Yeh (Los Gatos CA), Reverse damascene via structures.
  38. Dudnikov, Jr., George; Gisin, Franz; Schroeder, Gregory J., Selective deposition of embedded transient protection for printed circuit boards.
  39. Patrick W. Tandy, Selectively coating bond pads.
  40. Tandy,Patrick W., Selectively coating bond pads.
  41. Clampitt Darwin A., Semiconductor circuit interconnections and methods of making such interconnections.
  42. Juengling,Werner; Prall,Kirk D.; Iyer,Ravi; Sandhu,Gurtej S.; Blalock,Guy, Semiconductor constructions.
  43. Yasuda Hidefumi,JPX ; Tomita Mayumi,JPX, Semiconductor device and fabrication method thereof.
  44. Aoyama,Junichi, Semiconductor device and method of manufacturing the same.
  45. Cho, Tai-heui, Semiconductor device having multilevel interconnections and method of manufacturing the same.
  46. Cho,Tai heui, Semiconductor device having multilevel interconnections and method of manufacturing the same.
  47. Ishigami Takashi,JPX, Semiconductor device having wiring layers and method of fabricating the same.
  48. Kosowsky, Lex, Semiconductor devices including voltage switchable materials for over-voltage protection.
  49. Sandhu,Gurtej Singh; Yu,Chris Chang, Semiconductor manufacturing system for forming metallization layer.
  50. Dudnikov, Jr., George; Gisin, Franz; Schroeder, Gregory J., Substantially continuous layer of embedded transient protection for printed circuit boards.
  51. Kosowsky, Lex; Fleming, Robert; Graydon, Bhret, Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration.
  52. Fleming, Robert; Kosowsky, Lex; Shang, Shurui; Graydon, Bhret; Chen, Xiaofeng; Irvin, Glen, Substrates having voltage switchable dielectric materials.
  53. Kosowsky, Lex; Graydon, Bhret; Moustafaev, Djabbar; Shang, Shurui; Fleming, Robert, Substrates having voltage switchable dielectric materials.
  54. Shang, Shurui; Fleming, Robert, Substrates having voltage switchable dielectric materials.
  55. Kosowsky, Lex; Fleming, Robert, System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices.
  56. Yudasaka,Ichio; Shimoda,Tatsuya; Kanbe,Sadao; Miyazawa,Wakao, Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device.
  57. Yudasaka,Ichio; Shimoda,Tatsuya; Kanbe,Sadao; Miyazawa,Wakao, Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device.
  58. Yudasaka, Ichio; Shimoda, Tatsuya; Kanbe, Sadao; Miyazawa, Wakao, Thin film device provided with coating film, liquid crystal panel and electronic device, and method the thin film device.
  59. Kosowsky, Lex; Fleming, Robert; Wu, Junjun; Saraf, Pragnya; Ranganathan, Thangamani, Voltage switchable dielectric material containing conductive core shelled particles.
  60. Kosowsky, Lex; Fleming, Robert; Wu, Junjun; Saraf, Pragnya; Ranganathan, Thangamani, Voltage switchable dielectric material containing conductor-on-conductor core shelled particles.
  61. Kosowsky, Lex; Fleming, Robert, Voltage switchable dielectric material having bonded particle constituents.
  62. Cho, Beom-Seok; Jeong, Chang-Oh, Wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same.
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