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Oxide particles and method for producing them 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C01F-017/00
출원번호 US-0095749 (1993-07-21)
발명자 / 주소
  • Wang Jiun-Fang (Piscataway NJ)
출원인 / 주소
  • Rodel, Inc. (Newark DE 02)
인용정보 피인용 횟수 : 57  인용 특허 : 0

초록

The invention is a process for preparing chemically active solid oxide particles useful for polishing, composed primarily of CeO2, or CeO2 together with other oxides, comprising: (a) forming an aqueous solution comprised of a water soluble trivalent cerium salt and an oxidizing agent and (b) aging s

대표청구항

A process for preparing chemically active solid CeO2 particles useful for polishing comprising: (a) forming an aqueous solution comprised of a water soluble trivalent cerium salt and an oxidizing agent and (b) aging said solution as a liquid phase for a time not less than 4 hours at which time said

이 특허를 인용한 특허 (57)

  1. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Ootuki, Yuuto; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito, Abrasive, method of polishing target member and process for producing semiconductor device.
  2. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Ootuki, Yuuto; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito, Abrasive, method of polishing target member and process for producing semiconductor device.
  3. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Ootuki, Yuuto; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito, Abrasive, method of polishing target member and process for producing semiconductor device.
  4. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Ootuki, Yuuto; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito, Abrasive, method of polishing target member and process for producing semiconductor device.
  5. Yoshida,Masato; Ashizawa,Toranosuke; Terazaki,Hiroki; Ootuki,Yuuto; Kurata,Yasushi; Matsuzawa,Jun; Tanno,Kiyohito, Abrasive, method of polishing target member and process for producing semiconductor device.
  6. Tjaden Kevin ; Urbina G. Hugo, Apparatus and method for semiconductor planarization.
  7. Burba, III, John L.; Hassler, Carl R.; O'Kelley, C. Brock; Lupo, Joseph A.; Pascoe, Joseph R., Apparatus for treating a flow of an aqueous solution containing arsenic.
  8. Paul J. Yancey, CMP polishing slurry dewatering and reconstitution.
  9. Paul J. Yancey, CMP polishing slurry dewatering and reconstitution.
  10. Yancey Paul J., CMP polishing slurry dewatering and reconstitution.
  11. Yoshida Masato,JPX ; Ashizawa Toranosuke,JPX ; Terazaki Hiroki,JPX ; Kurata Yasushi,JPX ; Matsuzawa Jun,JPX ; Tanno Kiyohito,JPX ; Ootuki Yuuto,JPX, Cerium oxide abrasive and method of polishing substrates.
  12. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito; Ootuki, Yuuto, Cerium oxide abrasive and method of polishing substrates.
  13. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito; Ootuki, Yuuto, Cerium oxide abrasive and method of polishing substrates.
  14. Yoshida, Masato; Ashizawa, Toranosuke; Terazaki, Hiroki; Kurata, Yasushi; Matsuzawa, Jun; Tanno, Kiyohito; Ootuki, Yuuto, Cerium oxide abrasive and method of polishing substrates.
  15. Jun Matsuzawa JP; Yasushi Kurata JP; Kiyohito Tanno JP; Yoshio Honma JP, Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same.
  16. Bonneau Lionel,FRX ; Ferlin Patrick,FRX ; Zing Christophe,FRX, Cerium oxide with pores having a lamellar structure, preparation method therefor and use thereof in catalysis.
  17. DiFrancesco, Albert Gary; Hailstone, Richard K.; Reed, Kenneth J.; Prok, Gary R., Cerium-containing nanoparticles.
  18. Hampden Smith,Mark J.; Kodas,Toivo T.; Caruso,James; Skamser,Daniel J.; Powell,Quint H., Chemical-mechanical planarization slurries and powders and methods for using same.
  19. Hampden-Smith, Mark J.; Kodas, Toivo T.; Caruso, James; Skamser, Daniel J.; Powell, Quint H., Chemical-mechanical planarization slurries and powders and methods for using same.
  20. Hampden-Smith, Mark J.; Kodas, Toivo T.; Caruso, James; Skamser, Daniel J.; Powell, Quint H., Chemical-mechanical planarization slurries and powders and methods for using same.
  21. Burba, John, Composition and process for making the composition.
  22. Grover Gautam S. ; Mueller Brian L., Composition for oxide CMP.
  23. Grover, Gautam S.; Mueller, Brian L.; Wang, Shumin, Composition for oxide CMP.
  24. Witham, Richard Donald; McNew, Edward Bayer; Burba, III, John Leslie, Composition for removing arsenic from aqueous streams.
  25. Burba, III, John L., Composition for treating a fluid.
  26. Grover,Gautam S.; Mueller,Brian L.; Wang,Shumin, Compositions for oxide CMP.
  27. Ota, Isao; Nishimura, Tohru; Tanimoto, Kenji, Crystalline ceric oxide sol and process for producing the same.
  28. Rhoades, Robert L.; Yancey, Paul J., Dewatered CMP polishing compositions and methods for using same.
  29. Feng, Xiangdong; Her, Yie-Shein; Yang, Yi, Hydrothermal synthesis of cerium-titanium oxide for use in CMP.
  30. Sandford, David Wallace, Malic acid stabilized nanoceria particles.
  31. Yabe, Sinryo; Tofukuji, Kota; Momose, Shigeyoshi; Yoshida, Sakae; Tahira, Kazuyuki; Sato, Tsugio, Metal oxide doped cerium oxides, method for the preparation thereof, resin composition and cosmetic composition therewith.
  32. Tjaden Kevin ; Urbina G. Hugo, Method and system to increase delivery of slurry to the surface of large substrates during polishing operations.
  33. Blohowiak Kay Y. ; Newquist Charles W., Method for protecting a die.
  34. Feng, Xiangdong; Her, Yie-Shein, Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process.
  35. DiFrancesco, Albert Gary; Hailstone, Richard K.; Reed, Kenneth J.; Prok, Gary R., Method of making cerium oxide nanoparticles.
  36. Difrancesco, Albert Gary; Hailstone, Richard K.; Reed, Kenneth J.; Prok, Gary R., Method of making cerium oxide nanoparticles.
  37. Difrancesco, Albert Gary; Hailstone, Richard K.; Langner, Andreas; Reed, Kenneth J., Method of preparing cerium dioxide nanoparticles.
  38. Wang,Yuhu, Nanoporous ultrafine α-alumina powders and sol-gel process of preparing same.
  39. Brewer Richard ; Grebinski Thomas J. ; Currie James E. ; Jones Michael ; Mullee William ; Nguyen Ann, Planarization compositions and methods for removing interlayer dielectric films.
  40. Homma,Yoshio; Kusukawa,Kikuo; Moriyama,Shigeo; Nagasawa,Masayuki, Polishing agent and polishing method.
  41. Aihara Ryohei,JPX ; Endoh Kazuaki,JPX ; Tsugita Katsuyuki,JPX, Polishing agent for semiconductor and method for its production.
  42. Bunyan,Michael H.; Clement,Thomas A.; Hannafin,John J.; LaRosee,Marc E.; Young,Kent M., Polishing article for electro-chemical mechanical polishing.
  43. Carter, Phillip W.; Johns, Timothy, Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
  44. Carter,Phillip W.; Johns,Timothy P., Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
  45. Dysard, Jeffrey M.; Johns, Timothy P., Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
  46. Dysard, Jeffrey M.; Johns, Timothy P., Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
  47. Allman Derryl D. J. ; Crosby William J. ; Maiolo James A., Polishing composition for CMP operations.
  48. Nakamura,Kenro; Kubota,Takeo; Minamihaba,Gaku, Polishing method and polishing liquid.
  49. Paul J. Yancey ; Robert L. Rhoades, Polishing method using a reconstituted dry particulate polishing composition.
  50. Burba, III, John L.; Oriard, Tim L., Process and apparatus for treating a gas containing a contaminant.
  51. Reed, Kenneth; DiFrancesco, Albert Gary, Process for making cerium dioxide nanoparticles.
  52. Feng, Xiangdong; Her, Yie-Shein, Process for producing abrasive particles and abrasive particles produced by the process.
  53. Cable, Robert; Hassler, Carl; Burba, John, Rare earth removal of hydrated and hydroxyl species.
  54. Psaras, Dimitrios; Gao, Yuan; Haneline, Mason; Lupo, Joseph; Landi, Carol, Removal of arsenic from aqueous streams with cerium (IV) oxide compositions.
  55. Park, Tai-su; Park, Kyung-won; Kim, Sung-jin, Semiconductor device having a Y-shaped isolation layer and simplified method for manufacturing the Y-shaped isolation layer to prevent divot formation.
  56. Brezny Rasto ; Koranne Manoj M., Thermally stable support material and method for making the same.
  57. Witham, Richard Donald; McNew, Edward Bayer; Burba, III, John Leslie, Water purification device for arsenic removal.
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