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Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/365
출원번호 US-0594856 (1990-10-09)
발명자 / 주소
  • Davis Robert F. (Raleigh NC) Carter
  • Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC)
출원인 / 주소
  • North Carolina State University (Raleigh NC 02)
인용정보 피인용 횟수 : 421  인용 특허 : 0

초록

The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth

대표청구항

A method according to claim 1 wherein the step of generating and maintaining a substantially constant flow of vaporized Si, Si2C, and SiC2 per unit area per unit time from the source powder to the growth surface of the seed crystal further comprises introducing a thermal gradient between the source

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