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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0594856 (1990-10-09) |
발명자 / 주소 |
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출원인 / 주소 |
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인용정보 | 피인용 횟수 : 421 인용 특허 : 0 |
The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth
The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth surface and seed crystals, and by controlling the thermal gradient between the source materials and the seed crystal.
A method according to claim 1 wherein the step of generating and maintaining a substantially constant flow of vaporized Si, Si2C, and SiC2 per unit area per unit time from the source powder to the growth surface of the seed crystal further comprises introducing a thermal gradient between the source
A method according to claim 1 wherein the step of generating and maintaining a substantially constant flow of vaporized Si, Si2C, and SiC2 per unit area per unit time from the source powder to the growth surface of the seed crystal further comprises introducing a thermal gradient between the source powder and the seed crystal and then increasing the thermal gradient between the seed crystal and the source powder as the crystal grows and the source powder is used up to thereby maintain an absolute temperature difference between the source powder and seed crystal which continues to be most favorable for crystal growth and to continuously encourage further crystal growth beyond that which would be obtained by maintaining a constant temperature gradient.
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