초록 ▼

A unipolar electronic component is proposed with a quasi one dimensional carrier channel which has all the characteristics of an FET. This component can be very simply produced, has “self-alignment”and linear gates with a low capacity in place of planar gates. In this way a very high operating frequ

A unipolar electronic component is proposed with a quasi one dimensional carrier channel which has all the characteristics of an FET. This component can be very simply produced, has “self-alignment”and linear gates with a low capacity in place of planar gates. In this way a very high operating frequency of the component is possible. The structure comprises an initially homogenous 2D-layer with a high carrier mobility which is formed by epitaxy of for example GaAs. The implantation of focussed ions (for example Ga+with 100 keV) locally destroys the conductivity of the electron layer. The irradiated regions remain insulating at low temperature or room temperature even after illuminating the cristal with bandgap radiation. The writing in of the insulating layer is carried out along two paths on the chip so that the 2D-carrier layer is subdivided into three regions insulated from one another. The source and drain are only connected by a narrow channel 44 the width of which is continuously tunable by a gate potential which is simultaneously applied to the two gate regions relative to the source, so that a pronounced change of the carrier concentration and thus of the channel resistance arises. The specification also describes integrated circuits made using the same methods.

대표청구항 ▼

Field effect transistor manufactured from a semiconducting starting structure comprising a surface and a quasi two dimensional charge carrier layer which is substantially parallel to said surface, which has a thickness and which has charge carriers with a wavelength, said field effect transistor com

Field effect transistor manufactured from a semiconducting starting structure comprising a surface and a quasi two dimensional charge carrier layer which is substantially parallel to said surface, which has a thickness and which has charge carriers with a wavelength, said field effect transistor comprising lateral potential barriers for said charge carriers in said charge carrier layer, said lateral potential barriers forming boundary lines extending through said charge carrier layer which divide up said charge carrier layer into a plurality of regions: namely a) at least one channel region having first and second ends and a width, b) at least one gate region being adjacent to said channel region and c) a source region and a drain region for said channel region, said source region and said drain region being connected to said first and second ends of the corresponding channel region respectively; and wherein electrical contacts are provided to said source, drain and gate regions of said charge carrier layer.