[특허]Electron beam excited plasma system

Electron beam excited plasma system 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01J-017/26 H01J-027/20
출원번호	US-0004066 (1993-01-13)
우선권정보	JP-0024783 (1992-01-13); JP-0032328 (1992-02-19); JP-0032329 (1992-02-19)
발명자 / 주소	Araki Yoh-ichi (Nirasaki JPX) Mochizuki Shuuji (Kofu JPX)
출원인 / 주소	Tokyo Electron Limited (Tokyo JPX 03)
인용정보	피인용 횟수 : 36 인용 특허 : 0

초록 ▼

An electron beam excited plasma system in which an electron beam is extracted from a discharge plasma and accelerated, the accelerated electrons are applied to a etching gas to convert the etching gas into plasma, and the resulting gas plasma is caused to act on a wafer. The system comprises first gas source for supplying a gas for the generation of the discharge plasma to the region between a cathode and an anode, a first solenoid for forming a magnetic field substantially parallel to the direction of the electron beam such that the electron beam is guided along a center line connecting an axis of the cathode and a central axis of the wafer, an accelerating electrode surrounded by the first solenoid and adapted to accelerate the electron beam when a voltage is applied between the accelerating electrode and the anode, a second solenoid opposed to the wafer and scattering the magnetic field, formed by the first solenoid, outward from the center line, a double third solenoid for drawing in the magnetic field, scattered by the second solenoid, to a periphery of the wafer, a second gas source for supplying the etching gas to be converted into plasma by means of the electron beam to a region around the wafer, and a vacuum pump for evacuating the region around the wafer.

대표청구항 ▼

An electron beam excited plasma system in which an electron beam is extracted from a discharge plasma and accelerated, the accelerated electrons are applied to a process gas to convert the process gas into a gas plasma, and the resulting gas plasma is caused to act on a semiconductor wafer disposed on a support surface of a wafer holder, comprising: first gas supply means for supplying a gas, which is used to generate the discharge plasma, to a region between a cathode and an anode; first magnetic field forming means for forming a first magnetic field substantially parallel to the direction of the electron beam such that the electron beam is guided along a center line connecting an axis of the cathode and a central axis of the wafer holder; an accelerating electrode surrounded by the first magnetic field forming means and adapted to accelerate the electron beam when a voltage is applied between the accelerating electrode and the anode; second magnetic field forming means opposed to the support surface of the wafer holder for forming a second magnetic field opposite in polarity to the first magnetic field and for spreading said first magnetic field outward from said the center line; third magnetic field forming means for forming a third magnetic field having the same polarity as said first magnetic field to draw the first magnetic field spread by the second magnetic field to a peripheral portion of the wafer holder; second gas supply means for supplying the process gas to be converted into the gas plasma by means of the electron beam to a region around the wafer holder; and exhaust means for evacuating the region around the wafer.

이 특허를 인용한 특허 (36)

Yamazaki, Shunpei; Hamatani, Toshiji; Tanaka, Koichiro, Apparatus and method for doping.
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Yamazaki, Shunpei; Hamatani, Toshiji; Tanaka, Koichiro, Apparatus and method for doping.
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Yamazaki, Shunpei; Hamatani, Toshiji; Tanaka, Koichiro, Apparatus and method for doping.
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Yamazaki,Shunpei; Hamatani,Toshiji; Tanaka,Koichiro, Apparatus and method for doping.
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Yamazaki,Shunpei; Hamatani,Toshiji; Tanaka,Koichiro, Apparatus and method for doping.
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Felts, John T.; Fisk, Thomas E.; Abrams, Robert S.; Ferguson, John; Freedman, Jonathan R.; Pangborn, Robert J.; Sagona, Peter J., Apparatus and method for transporting a vessel to and from a PECVD processing station.
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Ito Masao (Kitakami JPX), Apparatus for performing plasma process on semiconductor wafers and the like and method of performing plasma process.
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Fisk, Thomas E., Coating inspection method.
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Weikart, Christopher; Clark, Becky L.; Stevenson, Adam; Abrams, Robert S.; Belfance, John, Controlling the uniformity of PECVD deposition.
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Weikart, Christopher; Clark, Becky L.; Stevenson, Adam; Abrams, Robert S.; Belfance, John; Jones, Joseph A.; Fisk, Thomas E., Controlling the uniformity of PECVD deposition on medical syringes, cartridges, and the like.
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Kanno, Masahiro, Etching apparatus and etching method.
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Toth, Milos; Knowles, William Ralph, High pressure charged particle beam system.
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Klein, Darryl P., Hydroconversion catalysts and methods of making and using same.
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Klein, Darryl P., Hydroconversion catalysts and methods of making and using same.
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Klein, Darryl P., Hydroconversion catalysts and methods of making and using same.
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Klein,Darryl P., Hydroconversion catalysts and methods of making and using same.
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Fisk, Thomas E.; Sagona, Peter J.; Jones, Joseph A., Method and apparatus for detecting rapid barrier coating integrity characteristics.
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Brooke, M. Jason; Acuna, Andrea, Method and apparatus to perform electrode combination selection.
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Brooke, M. Jason; Acuna, Andrea, Method and apparatus to perform electrode combination selection.
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Brooke, M. Jason; Acuna, Andrea, Method and apparatus to perform electrode combination selection.
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Sathaye, Alok S.; Brooke, M. Jason; Tockman, Bruce Alan, Method and apparatus to perform electrode combination selection.
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Sathaye, Alok S.; Brooke, M. Jason; Tockman, Bruce Alan, Method and apparatus to perform electrode combination selection.
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Yamazaki, Shunpei, Method for manufacturing SOI substrate and method for manufacturing semiconductor device.
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Felts, John T.; Fisk, Thomas E.; Kinney, Shawn; Weikart, Christopher; Hunt, Benjamin; Raiche, Adrian; Fitzpatrick, Brian; Sagona, Peter J.; Stevenson, Adam, PECVD coating methods for capped syringes, cartridges and other articles.
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Jones, Joseph A.; Felts, John T.; Gresham, James Troy; Lilly, Brian Russell; Fisk, Thomas E., PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases.
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Felts, John T.; Fisk, Thomas E.; Abrams, Robert S.; Ferguson, John; Freedman, Jonathan R.; Pangborn, Robert J.; Sagona, Peter J.; Weikart, Christopher, Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus.
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Jones, Joseph A.; Weikart, Christopher; Martin, Steven J., Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus.
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Iwasaki,Masahide; Miyata,Koji, Plasma processing apparatus and method.
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Felts, John T.; Fisk, Thomas E.; Abrams, Robert S.; Ferguson, John; Freedman, Jonathan R.; Pangborn, Robert J.; Sagona, Peter; Weikart, Christopher; Israelachvili, Jacob, Saccharide protective coating for pharmaceutical package.
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Weikart, Christopher; Clark, Becky L.; Stevenson, Adam; Felts, John T., Trilayer coated pharmaceutical packaging.
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Weikart, Christopher; Clark, Becky L.; Stevenson, Adam; Felts, John T., Trilayer coated pharmaceutical packaging.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Electron beam excited plasma system 원문보기

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Electron beam excited plasma system 원문보기

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이 특허를 인용한 특허 (36)

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