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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0160908 (1993-12-03) |
| 우선권정보 | JP-0350545 (1992-12-04); JP-0204775 (1993-07-27) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 470 인용 특허 : 0 |
A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum
A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
A method for manufacturing a semiconductor device comprising: selectively forming on a substrate a substance containing a material having a catalytic action; forming on said substrate a silicon film substantially in an amorphous state in contact with said substance; and annealing said substrate in a
A method for manufacturing a semiconductor device comprising: selectively forming on a substrate a substance containing a material having a catalytic action; forming on said substrate a silicon film substantially in an amorphous state in contact with said substance; and annealing said substrate in an atmosphere comprising at least one of oxygen, nitrogen and hydrogen, wherein crystallization of said silicon film is caused in said annealing with said catalytic action.
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