이 특허를 인용한 특허 (76)

1. Weimer,Ronald A.; Powell,Don C.; Moore,John T.; McKee,Jeff A., Apparatus having a memory device with floating gate layer grain boundaries with oxidized portions.

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2. Jeng, Nanseng, Barrier in gate stack for improved gate dielectric integrity.

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3. Jeng, Nanseng; Ahmad, Aftab, Barrier in gate stack for improved gate dielectric integrity.

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4. Jeng, Nanseng; Ahmad, Aftab, Barrier in gate stack for improved gate dielectric integrity.

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5. Nanseng Jeng ; Aftab Ahmad, Barrier in gate stack for improved gate dielectric integrity.

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6. Gonzalez, Fernando; Lee, Roger, Dual gate dielectric construction.

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7. Liu Jen-Cheng,TWX ; Lin Huan-Just,TWX ; Tsai Chia-Shiung,TWX ; Hsaio Yung-Kuan,TWX, Etch process for fabricating a vertical hard mask/conductive pattern profile to improve T-shaped profile for a silicon oxynitride hard mask.

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8. Ahmad Aftab, Fabrication of integrated devices using nitrogen implantation.

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9. Ahmad,Aftab, Fabrication of integrated devices using nitrogen implantation.

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10. Brasen Daniel ; Garfunkel Eric L. ; Green Martin L. ; Gusev Evgeni Petrovich, Field effect devices and capacitors with improved thin film dielectrics and method for making same.

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11. Gilmer Mark C. ; Gardner Mark I., Formation of oxynitride and polysilicon layers in a single reaction chamber.

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12. Sun Shi-Chung,TWX ; Chen Chun-Hon,TWX ; Yen Lee-Wei,TWX ; Lin Chun-Jung,TWX, Gate dielectric based on oxynitride grown in N.sub.2 O and annealed in NO.

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13. Buchanan, Douglas A.; Callegari, Alessandro C.; Gribelyuk, Michael A.; Jamison, Paul C.; Neumayer, Deborah Ann, High mobility FETS using A1203 as a gate oxide.

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14. Gardner Mark I. ; Gilmer Mark C., Incorporating barrier atoms into a gate dielectric using gas cluster ion beam implantation.

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15. Shau-Lin Shue TW; Jih-Churng Twu TW, Lightly nitridation surface for preparing thin-gate oxides.

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16. Shue Shau-Lin,TWX ; Twu Jih-Churng,TWX, Lightly nitridation surface for preparing thin-gate oxides.

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17. Liu Jen-Cheng,TWX ; Chao Li-Chih,TWX ; Lin Huan-Just,TWX ; Hsiao Yung-Kuan,TWX, Method for fabricating a T-shaped hard mask/conductor profile to improve self-aligned contact isolation.

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18. Li Li ; Randhir Thakur ; Richard C. Hawthorne, Method for forming a dielectric.

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19. Li Li ; Thakur Randhir ; Hawthorne Richard C., Method for forming a dielectric.

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20. Kaushik Vidya S. ; Tseng Hsing-Huang, Method for forming a reverse dielectric stack.

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21. Kwon, Tae-Seok, Method for forming conductive line in semiconductor device.

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22. Sa Kyun Ra KR, Method for forming gate oxide film in semiconductor device.

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23. Gousev, Evgeni; Ajmera, Atul C.; D'Emic, Christopher P., Method for forming heavy nitrogen-doped ultra thin oxynitride gate dielectrics.

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24. Liu Yi-Chih,TWX, Method for manufacturing gate oxide layers.

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25. Dip, Anthony, Method for replacing a nitrous oxide based oxidation process with a nitric oxide based oxidation process for substrate processing.

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26. Martin, Fran.cedilla.ois; Bensahel, Daniel; Hernandez, Caroline; Vallier, Laurent, Method for treating a silicon substrate, by nitriding, to form a thin insulating layer.

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27. Fernando Gonzalez ; Roger Lee, Method of fabricating a dual gate dielectric.

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28. Gardner Mark I., Method of fabricating a semiconductor device having nitrogen-bearing gate electrode.

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29. Halliyal Arvind ; Foote David K. ; Komori Hideki ; Au Kenneth W., Method of fabricating an ONO dielectric by nitridation for MNOS memory cells.

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30. Tse-Wei Liu TW; Jumn-Min Fan TW; Weichi Ting TW, Method of fabricating capacitor dielectric.

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31. Wu Shye-Lin,TWX ; Chung Bu-Chin,TWX, Method of fabricating flash memory cell.

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32. Martin John Elmslie,SGX ; Chan Lap ; Sudijono John Leonard,SGX ; Ang Ting Cheong,SGX, Method of fabrication of low leakage capacitor.

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33. Tseng Hsing-Huang ; Tobin Philip J., Method of formation of semiconductor gate dielectric.

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34. Sandhu, Gurtej S.; Batra, Shubneesh; Fazan, Pierre C., Method of forming a thin film transistor.

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35. Sandhu, Gurtej S.; Batra, Shubneesh; Fazan, Pierre C., Method of forming a thin film transistor.

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36. Yingbo Jia ; Ohm-Guo Pan ; Long-Ching Wang ; Jeong Yeol Choi ; Guo-Qiang (Patrick) Lo ; Shih-Ked Lee, Method of forming an oxide layer.

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37. Wristers Dirk J. (Austin TX) Fulford H. Jim (Austin TX) Kwong Dim Lee (Austin TX), Method of forming high pressure silicon oxynitride gate dielectrics.

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38. Dong Zhong,SGX, Method of forming low pressure silicon oxynitride dielectrics having high reliability.

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39. Buchanan Douglas Andrew ; Copel Matthew Warren ; Varekamp Patrick Ronald, Method of forming oxynitride gate dielectric.

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40. Ma Yi ; Roy Pradip Kumar ; Wu Kevin Yun-Kang, Method of making a dielectric for an integrated circuit.

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41. Dong Zhong,SGX ; Hui Joe,SGX ; Zhang Anqing,SGX, Method of manufacturing a gate structure for a semiconductor memory device with improved breakdown voltage and leakage rate.

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42. Don Carl Powell ; Ron Weimer ; Lyle Breiner ; Howard Rhodes ; Jeff McKee ; David Kubista, Method of selective oxidation in semiconductor manufacture.

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43. Mark Ramsbey ; Unsoon Kim ; Kenneth Wo-Wai Au ; David H. Chi ; James Markarian, Methods and arrangements for forming a single interpoly dielectric layer in a semiconductor device.

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44. Lee, Seok-Woo, Methods of fabricating semiconductor devices with barrier layers.

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45. Goder, Alexey G.; Yam, Mark, Multi-computer chamber control system, method and medium.

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46. Gonzalez, Fernando; Lee, Roger, Multiple thickness gate dielectric layers.

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47. Takeuchi Nobuyoshi,JPX, Non-volatile semiconductor memory device.

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48. Fastow, Richard M.; Chang, Chi; Derhacobian, Narbeh, Nonvolatile memory cell with a nitridated oxide layer.

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49. Lim, Juwan; Baek, Sungkweon; Park, Kwangmin; Baik, Seungjae; Hwang, Kihyun, Nonvolatile memory device and method of forming the same.

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50. Lim, Juwan; Baek, Sungkweon; Park, Kwangmin; Baik, Seungjae; Hwang, Kihyun, Nonvolatile memory device and method of forming the same.

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51. Gilmer Mark C. ; Gardner Mark I., Oxynitride GTE dielectrics using NH.sub.3 gas.

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52. Tobin Philip J. ; Hegde Rama I. ; Tseng Hsing-Huang ; O'Meara David ; Wang Victor, Process for forming a semiconductor device.

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53. Tobin Philip J. ; Hegde Rama I. ; Tseng Hsing-Huang ; O'Meara David ; Wang Victor, Process for forming a semiconductor device.

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54. Hao Ming-Yin ; Ogle ; Jr. Robert Bertram ; Wristers Derick, Process for reliable ultrathin oxynitride formation.

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55. Chao Tien S. (Hsinchu TWX) Chu Chih-Hsun (Hsinchu TWX), Process for suppressing boron penetration in BF₂+-implanted P+-poly-Si gate us.

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56. Terasaki, Tadashi; Hirano, Akito; Nakayama, Masanori; Ogawa, Unryu, Producing method of semiconductor device.

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57. Doan Trung T., Self aligned contacts.

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58. Doan Trung T., Self-aligned contacts.

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59. Gyu Han Yoon KR, Semiconductor device and method for fabricating the same.

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60. Yoon Gyu Han,KRX, Semiconductor device and method for fabricating the same.

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61. Hisatomi Kiyoshi,JPX ; Mikata Yuuichi,JPX ; Funo Sakae,JPX ; Ishihara Katsunori,JPX, Semiconductor device having insulation film whose breakdown voltage is improved and its manufacturing method.

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62. Sakama,Mitsunori; Ishimaru,Noriko; Asami,Taketomi; Yamazaki,Shunpei, Semiconductor device, and method of fabricating the same.

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63. Sakama,Mitsunori; Ishimaru,Noriko; Asami,Taketomi; Yamazaki,Shunpei, Semiconductor device, and method of fabricating the same.

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64. Yang, Chin-Sheng; Chen, Chien-Hung, Sonos device.

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65. Yang, Chin-Sheng; Chen, Chien-Hung, Sonos device and method for fabricating the same.

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66. Sandhu, Gurtej S.; Batra, Shubneesh; Fazan, Pierre C., Thin film transistors and semiconductor constructions.

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67. Sandhu,Gurtej S.; Batra,Shubneesh; Fazan,Pierre C., Thin film transistors and semiconductor constructions.

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68. Sandhu,Gurtej S.; Batra,Shubneesh; Fazan,Pierre C., Thin film transistors and semiconductor constructions.

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69. Gardner Mark I. ; Fulford ; Jr. H. Jim ; May Charles E., Transistor having a nitrogen incorporated epitaxially grown gate dielectric and method of making same.

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70. Ryoo, Doo Yeol, Transistor in semiconductor devices and method of fabricating the same.

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71. Hao Ming-Yin ; Ogle ; Jr. Robert Bertram ; Wristers Derick, Ultrathin oxynitride structure and process for VLSI applications.

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72. Ronald A. Weimer ; Don C. Powell ; John T. Moore ; Jeff A. McKee, Use of dilute steam ambient for improvement of flash devices.

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73. Weimer, Ronald A.; Powell, Don C.; Moore, John T.; McKee, Jeff A., Use of dilute steam ambient for improvement of flash devices.

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74. Weimer, Ronald A.; Powell, Don C.; Moore, John T.; McKee, Jeff A., Use of dilute steam ambient for improvement of flash devices.

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75. Weimer, Ronald A.; Powell, Don C.; Moore, John T.; McKee, Jeff A., Use of dilute steam ambient for improvement of flash devices.

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76. Weimer, Ronald A; Powell, Don C; Moore, John T; McKee, Jeff A, Use of dilute steam ambient for improvement of flash devices.

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