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Optical end point detection methods in semiconductor planarizing polishing processes 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01D-021/00
출원번호 US-0178663 (1994-01-06)
발명자 / 주소
  • Koos Daniel A. (Boise ID) Meikle Scott (Boise ID)
출원인 / 주소
  • Micron Technology, Inc. (Boise ID 02)
인용정보 피인용 횟수 : 249  인용 특허 : 0

초록

A semiconductor processing method of detecting polishing end point from a polishing planarization process includes: a) impinging laser light onto an area of an outermost surface of a semiconductor substrate at an angle of incidence of at least 70°from a line normal relative to the substrate (at leas

대표청구항

A semiconductor processing method of detecting polishing end point from a polishing planarization process, the method comprising the following sequential steps: a) impinging laser light onto an area of an outermost surface of a semiconductor substrate at an angle of incidence of at least 75°from a l

이 특허를 인용한 특허 (249)

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