초록 ▼

An integrated circuit, diode-based temperature sensor circuit (10) is amenable to fabrication upon a readout circuit (12) that is coupled during use to a FPA or radiation detectors. The sensor circuit is inherently self-calibrated, and provides for a cancellation of circuit offsets and other error s

An integrated circuit, diode-based temperature sensor circuit (10) is amenable to fabrication upon a readout circuit (12) that is coupled during use to a FPA or radiation detectors. The sensor circuit is inherently self-calibrated, and provides for a cancellation of circuit offsets and other error sources. The circuit has an output that is time-multiplexed onto a data path that normally conveys a video data stream away from the readout circuit. The circuit operates to selectively forward bias a diode (D1) with two different currents. A difference between the currents is shown to indicate the temperature of the diode\s p-n junction.

대표청구항 ▼

A temperature sensing circuit integrated upon a circuit device for use in a Focal Plane Array assembly, comprising: a p-n junction; and means, coupled to said p-n junction, for forward biasing said p-n junction, said biasing means being comprised of current mirror means that is responsive to a first

A temperature sensing circuit integrated upon a circuit device for use in a Focal Plane Array assembly, comprising: a p-n junction; and means, coupled to said p-n junction, for forward biasing said p-n junction, said biasing means being comprised of current mirror means that is responsive to a first state of a control signal for providing a first forward bias current through said p-n junction, said current mirror means being responsive to a second state of said control signal for providing a second forward bias current through said p-n junction, wherein said first forward bias current results in a first potential across said p-n junction, wherein said second forward bias current results in a second potential across said p-n junction, and output means for selectively providing said first potential and said second potential to measurement means that is external to said circuit device, wherein a difference between said first potential and said second potential is indicative of a temperature of said p-n junction. A method of determining a temperature at a location within a Focal Plane Array assembly, comprising the steps of: providing a p-n junction at the location; activating a control signal for forward biasing the p-n junction with a first forward bias current; sensing, remotely from the location, a first voltage potential resulting from the first forward bias current; activating the control signal for forward biasing the p-n junction with a second forward bias current; sensing, remotely from the location, a second voltage potential resulting from the second forward bias current; and determining a difference between the first voltage potential and the second voltage potential, the step of determining removing substantially all voltage potentials resulting from error sources such that the difference in potentials is indicative only of the temperature at the location.; wherein the steps of sensing include a step of time multiplexing the first and second voltage potentials with output signals from a radiation detector array that forms a part of the Focal Plane Array assembly.