초록 ▼

Photoelectric converting parts and vertical CCD register parts are formed in a semiconductor substrate. Polysilicon electrodes are formed on the vertical CCD register parts. On the polysilicon electrodes, polysilicon oxide film and dielectric film are deposited. On the polysilicon electrodes, contac

Photoelectric converting parts and vertical CCD register parts are formed in a semiconductor substrate. Polysilicon electrodes are formed on the vertical CCD register parts. On the polysilicon electrodes, polysilicon oxide film and dielectric film are deposited. On the polysilicon electrodes, contact windows are formed by mask matching and etching. The contact windows are formed in the first polysilicon electrode and second polysilicon electrode so as to realize four-phase drive of the solid-state image pickup device. Polysilicon film and tungsten silicide film are formed thereon. By etching these films, a first wiring is formed. A second wiring of aluminum film is formed thereon through an interlayer dielectric film. Hence, a high transfer efficiency and a favorable smear noise characteristic are presented at low illumination.

대표청구항 ▼

A solid-state image pickup device comprising: a semiconductor substrate; a matrix formed on said semiconductor substrate, said matrix having a plurality of matrix components arranged in a matrix configuration; each of said plurality of matrix components comprising (a) a photoelectric converting part

A solid-state image pickup device comprising: a semiconductor substrate; a matrix formed on said semiconductor substrate, said matrix having a plurality of matrix components arranged in a matrix configuration; each of said plurality of matrix components comprising (a) a photoelectric converting part formed in said semiconductor substrate; (b) a first gate electrode formed on said semiconductor substrate and positioned adjacent to said photoelectric converting part; (c) a second gate electrode formed on said semiconductor substrate and positioned adjacent to said photoelectric converting part so that said first gate electrode and said second gate electrode overlap; (d) said first gate electrode and second gate electrode further formed on said substrate so that said first gate electrode and said second gate electrode are in a column; one of said matrix components electrically connected with another one of said matrix components so that the first gate electrode in each of the electrically connected matrix components are in a first row and electrically connected and the second gate electrode in each of the electrically connected matrix components are in a second row and electrically connected at least one contact window formed in at least one of said first gate electrode and said second gate electrode; and wirings formed in at least said contact window, said wirings including a first wiring layer and a second wiring layer formed on said first wiring layer, said first wiring layer comprised of silicon and a second material selected from the group consisting of a refractory metal and a refractory metal silicide and said second wiring layer is a light shield layer for said first wiring layer.