이 특허를 인용한 특허 (68)

1. Solayappan, Narayan; Celinska, Jolanta; Joshi, Vikram; Paz de Araujo, Carlos A.; McMillan, Larry D., Barrier layers for protecting metal oxides from hydrogen degradation.

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2. Solayappan,Narayan; Celinska,Jolanta; Joshi,Vikram; Paz de Araujo,Carlos A.; McMillan,Larry D., Barrier layers for protecting metal oxides from hydrogen degradation.

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3. Feltz, Adalbert; Florian, Heinz; Schossmann, Michael, Ceramic material.

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4. Uchiyama, Kiyoshi; Solayappan, Narayan; Paz de Araujo, Carlos A., Chemical vapor deposition process for fabricating layered superlattice materials.

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5. Uchiyama, Kiyoshi; Solayappan, Narayan; Paz de Araujo, Carlos A., Chemical vapor deposition process for fabricating layered superlattice materials.

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6. Garza Mario ; Chao Keith K., Comparing aerial image to SEM of photoresist or substrate pattern for masking process characterization.

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7. Garza Mario ; Chao Keith K., Comparing aerial image to actual photoresist pattern for masking process characterization.

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8. Uchida Hiroto ; Soyama Nobuyuki ; Kageyama Kensuke,JPX ; Ogi Katsumi,JPX ; Bacon Jeffrey W. ; Scott Michael C. ; McMillan Larry D. ; Paz de Araujo Carlos A., Composition and process using ester solvents for fabricating metal oxide films and electronic devices including the same.

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9. MacDonald, Jeff; Quan, Nancy N.; Hayman, Robert, Dental whitening compositions.

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10. Uchiyama, Kiyoshi; Tanaka, Keisuke, Electrodes for ferroelectric components.

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11. Fujiki Mitsushi,JPX ; Cross Jeffrey S.,JPX ; Tsukada Mineharu,JPX, Electronic device having perovskite-type oxide film, production thereof, and ferroelectric capacitor.

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12. Dougherty T. Kirk ; Drab John J., Environmentally benign Group II and Group IV or V spin-on precursor materials.

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13. Dougherty T. Kirk ; Drab John J. ; Ramer O. Glenn, Environmentally benign bismuth-containing spin-on precursor materials.

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14. Dougherty,Thomas K.; Drab,John J., Environmentally benign lead zirconate titanate ceramic precursor materials.

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15. Paz de Araujo,Carlos A.; McMillan,Larry D.; Solayappan,Narayan; Joshi,Vikram, Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same.

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16. Paz de Araujo,Carlos A.; McMillan,Larry D.; Solayappan,Narayan; Joshi,Vikram, Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same.

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17. Paz de Araujo, Carlos A.; McMillan, Larry D.; Joshi, Vikram; Solayappan, Narayan; Cuchiaro, Joseph D., Ferroelectric and high dielectric constant transistors.

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18. Jung, Dong-jin, Ferroelectric capacitor and method for fabricating the same.

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19. Myoungho Lim ; Vikram Joshi ; Narayan Solayappan ; Larry D. McMillan ; Carlos A. Paz de Araujo, Ferroelectric device with bismuth tantalate capping layer and method of making same.

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20. Arita Koji ; Paz de Araujo Carlos A., Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material.

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21. Joseph D. Cuchiaro ; Carlos A. Paz de Araujo ; Larry D. McMillan, Ferroelectric integrated circuit having hydrogen barrier layer.

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22. Cuchiaro Joseph D. ; Furuya Akira,JPX ; Paz de Araujo Carlos A. ; Miyasaka Yoichi,JPX, Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same.

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23. Cuchiaro, Joseph D.; Furuya, Akira; Paz de Araujo, Carlos A.; Miyasaka, Yoichi, Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same.

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24. Cuchiaro Joseph D. ; Furuya Akira,JPX ; Paz de Araujo Carlos A. ; Miyasaka Yoichi,JPX, Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same.

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25. Solayappan Narayan ; Joshi Vikram ; Paz de Araujo Carlos A. ; McMillan Larry D. ; Hayashi Shinichiro,JPX ; Otsuki Tatsuo,JPX, Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same.

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26. Usagawa, Toshiyuki, Gas sensor.

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27. Cuchiaro, Joseph D.; Furuya, Akira; Paz de Araujo, Carlos A.; Miyasaka, Yoichi, Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same.

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28. Arita Koji ; Hayashi Shinichiro,JPX ; Cuchiaro Joseph D. ; Paz de Araujo Carlos A., Low imprint ferroelectric material for long retention memory and method of making the same.

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29. Koji Arita ; Shinichiro Hayashi JP; Joseph D. Cuchiaro ; Carlos A. Paz de Araujo, Low imprint ferroelectric material for long retention memory and method of making the same.

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30. Joshi, Vikram; Celinska, Jolanta; Solayappan, Narayan; McMillan, Larry D.; Paz de Araujo, Carlos A.; Arita, Koji, Low temperature oxidizing method of making a layered superlattice material.

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31. Solayappan Narayan ; Joshi Vikram ; Paz de Araujo Carlos A., Low temperature process for fabricating layered superlattice materials and making electronic devices including same.

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32. Uchiyama Kiyoshi ; Arita Koji,JPX ; Solayappan Narayan ; Paz de Araujo Carlos A., Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same.

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33. Celinska, Jolanta; Joshi, Vikram; Solayappan, Narayan; Lim, Myoungho; McMillan, Larry D.; Paz de Araujo, Carlos A., Low thermal budget fabrication of ferroelectric memory using RTP.

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34. Fitzgerald, Eugene A., Low threading dislocation density relaxed mismatched epilayers without high temperature growth.

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35. Hartner, Walter; Schindler, Gunther; Weinrich, Volker; Ahlstedt, Mattias, Method for fabricating a patterned metal-oxide-containing layer.

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36. Cuchiaro Joseph D. ; Furuya Akira,JPX ; Paz de Araujo Carlos A. ; Miyasaka Yoichi,JPX, Method for fabricating ferroelectric integrated circuits.

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37. Kroenke, Matthias; Kasko, Igor, Method for fabricating ferroelectric memory cells.

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38. Ooms William J. ; Marshall Daniel S. ; Hallmark Jerald A., Method for making a ferroelectric semiconductor device and a layered structure.

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39. Mathonnet, Jean-Pierre; Zannini, Gaetano, Method for making granules.

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40. Nagano Yoshihisa,JPX ; Shimada Yasuhiro,JPX ; Fujii Eiji,JPX, Method for manufacturing capacitor element.

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41. Hartner, Walter; Schindler, Gunther; Hintermaier, Frank; Weinrich, Volker, Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize.

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42. Cuchiaro Joseph D. ; Furuya Akira,JPX ; Paz de Araujo Carlos A. ; Miyasaka Yoichi,JPX, Method of fabricating ferroelectric integrated circuit using dry and wet etching.

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43. Cuchiaro Joseph D. ; Furuya Akira,JPX ; Paz de Araujo Carlos A. ; Miyasaka Yoichi,JPX, Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation.

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44. Engelhardt, Manfred; Hartner, Walter; Hintermaier, Frank; Schindler, Günther; Weinrich, Volker, Method of patterning ferroelectric layers.

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45. Hase Takashi,JPX, Method of producing a bismuth layer structured ferroelectric thin film.

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46. Toru Nasu JP; Koji Arita JP, Method using unreactive gas anneal and low temperature pretreatment for fabricating layered superlattice materials and making electronic devices including same.

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47. Vineis,Christopher; Yang,Vicky; Currie,Matthew; Westhoff,Richard; Leitz,Christopher, Methods of fabricating semiconductor heterostructures.

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48. Yitzchaik, Shlomo, Molecular epitaxy method and compositions.

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49. Yitzchaik Shlomo,ILX ; Burtman Vladimir,ILX, Molecular layer epitaxy method and compositions.

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50. Yitzchaik, Shlomo, Molecular layer epitaxy method and compositions.

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51. Dougherty T. Kirk ; Drab John J. ; Ramer O. Glenn, Non-toxic solvent soluble group IV and V metal acid salt complexes using polyether acid anhydrides.

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52. Yamanobe Tomomi,JPX, Non-volatile semiconductor memory cell and method for production thereof.

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53. Yamamoto, Ichiro; Iizuka, Toshihiro; Kato, Yoshitake, Process for fabricating capacitor having dielectric layer with pervskite structure and apparatus for fabricating the same.

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54. Dougherty Thomas K. ; Ramer O. Glenn, Process for forming thin film metal oxide materials having improved electrical properties.

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55. Dougherty Thomas K. ; Ramer O. Glenn, Process for making stoichiometric mixed metal oxide films.

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56. Uchiyama, Kiyoshi; Paz de Araujo, Carlos A.; Tanaka, Keisuke, Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same.

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57. Joshi Vikram ; Solayappan Narayan ; Hartner Walter,DEX ; Schindler Gunther,DEX, Recovery of electronic properties in process-damaged ferroelectrics by voltage-cycling.

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58. Vineis, Christopher J.; Westhoff, Richard; Bulsara, Mayank, Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy.

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59. Vineis,Christopher; Yang,Vicky; Currie,Matthew; Westhoff,Richard; Leitz,Christopher, Semiconductor heterostructures and related methods.

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60. Westhoff,Richard; Yang,Vicky; Currie,Matthew; Vineis,Christopher; Leitz,Christopher, Semiconductor heterostructures having reduced dislocation pile-ups.

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61. Westhoff, Richard; Yang, Vicky K.; Currie, Matthew T.; Vineis, Christopher; Leitz, Christopher, Semiconductor heterostructures having reduced dislocation pile-ups and related methods.

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62. Otabe, Takuya; Nagata, Masaya, Semiconductor memory device including a capacitor an upper electrode of which being resistant of exfoliation.

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63. Joshi, Vikram; Solayappan, Narayan; Paz de Araujo, Carlos A.; McMillan, Larry D., Stacked memory cell having diffusion barriers.

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64. Joshi,Vikram; Solayappan,Narayan; Paz de Araujo,Carlos A.; McMillan,Larry D., Stacked memory cell having diffusion barriers.

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65. Matsuki Takeo,JPX ; Hayashi Yoshihiro,JPX, Thin film formation method for ferroelectric materials.

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66. Azuma Masamichi ; McMillan Larry D. ; Paz de Araujo Carlos A. ; Scott Michael C., UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue.

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67. Dougherty, T. Kirk; Drab, John J., Water-soluble group III polyether acid salt complexes and thin films from same.

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68. Dougherty,T. Kirk; Drab,John J., Water-soluble group III polyether acid salt complexes and thin films from same.

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