[특허]Heterojunction bipolar transistor having particular Ge distributions and gradients

Heterojunction bipolar transistor having particular Ge distributions and gradients 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-029/73 H01L-027/082 H01L-027/00
출원번호	US-0348216 (1994-11-28)
우선권정보	JP-0296496 (1993-11-26)
발명자 / 주소	Yamazaki Toru (Tokyo JPX)
출원인 / 주소	NEC Corporation (Tokyo JPX 03)
인용정보	피인용 횟수 : 36 인용 특허 : 0

초록 ▼

A semiconductor device with HBT that enables the cutoff frequency of the HBT to be restrained from lowering at higher collector current levels. The HBT has an emitter region, a SiGe base region, and first and second SiGe collector regions. The first collector region is adjacent to the base region. The base region has a first distribution of Ge concentration graded as a function of depth. The Ge concentration of the first distribution increases at a first gradient as a function of depth from a base-emitter junction to a base-collector junction. The first and second collector regions have second and third distributions of Ge concentration graded as a function of depth. A minimum Ge concentration of the second distribution is not lower than a maximum Ge concentration of the third distribution. In the vicinity of an interface of the first and second collector regions, Ge concentration of the second distribution decreases at a second gradient as a function of depth to the interface, Ge concentration of the third distribution decreases at a third gradient smaller than the second gradient as a function of depth from the interface toward an opposite end of the interface.

대표청구항 ▼

A semiconductor device comprising: an emitter region of a first conductivity type, said emitter region being made of single-crystal Si; a base region of a second conductivity type opposite in polarity to said first conductivity type, said base region being made of Ge-containing single-crystal Si; a first collector region of said first conductivity type, said first collector region being made of Ge-containing single-crystal Si and being adjacent to said base region; a second collector region of said first conductivity type, said second collector region being made of Ge-containing single-crystal Si; said emitter region, said base region and said first and second collector regions forming a heterojunction bipolar transistor; said base region having a first distribution of Ge concentration that is graded as a function of depth of said base region, Ge concentration of said first distribution increasing at a first gradient as a function of depth of said base region from a base-emitter junction to a base-collector junction; said first collector region having a second distribution of Ge concentration graded as a function of depth of said first collector region; said second collector region having a third distribution of Ge concentration graded as a function of depth of said second collector region; a minimum value of Ge concentration of said second distribution being higher than or equal to a maximum value of Ge concentration of said third distribution; and in said vicinity of an interface of said first and second collector regions, Ge concentration of said second distribution in said first collector region decreasing at a second gradient as a function of depth of said first collector region to said interface, Ge concentration of said third distribution in said second collector region decreasing at a third gradient as a function of depth of said second collector region from said interface toward an opposite end of said interface, and said third gradient being smaller than said second gradient.

이 특허를 인용한 특허 (36)

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Ozkan, Cengiz S.; Salmi, Abderrahmane, Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe).
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U'ren,Gregory D., Independent control of polycrystalline silicon-germanium in an HBT and related structure.
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Suvkhanov,Agajan; Mirabedini,Mohammad R., Ion recoil implantation and enhanced carrier mobility in CMOS device.
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Suvkhanov,Agajan; Mirabedini,Mohammad R., Ion recoil implantation and enhanced carrier mobility in CMOS device.
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Hashemi, Pouya; Khakifirooz, Ali; Lu, Darsen D.; Reznicek, Alexander; Schepis, Dominic J., Lateral bipolar junction transistor having graded SiGe base.
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Sadovnikov, Alexei, Low doped base spacer for reduction of emitter-base capacitance in bipolar transistors with selectively grown epitaxial base.
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Schuppen Andreas,DEX ; Dietrich Harry,DEX ; Konig Ulf,DEX, Method of fabricating a heterobipolar transistor.
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Yoshida Naohito,JPX ; Sakai Masayuki,JPX, Method of making bipolar transistor.
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Takasuke Hashimoto JP, Method of manufacturing semiconductor device with no parasitic barrier.
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Howe Roger T. ; Franke Andrea ; King Tsu-Jae, Polycrystalline silicon germanium films for forming micro-electromechanical systems.
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Miura, Makoto; Washio, Katsuyoshi; Shimamoto, Hiromi, Semiconductor device and manufacturing method of the same.
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Hashimoto, Takasuke, Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved.
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Hashimoto, Takasuke, Semiconductor device having the effect that the drop in the current gain is kept to the minimum, when the substrate density is amplified and that the variation in the collector current is improved.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Heterojunction bipolar transistor having particular Ge distributions and gradients 원문보기

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Heterojunction bipolar transistor having particular Ge distributions and gradients 원문보기

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