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Apparatus and method of electroplating 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25D-005/08
  • C25D-005/48
  • C25D-017/00
출원번호 US-0192853 (1994-02-07)
우선권정보 JP-0071379 (1993-03-30)
발명자 / 주소
  • Kosaki Katsuya (Itami JPX)
출원인 / 주소
  • Mitsubishi Denki Kabushiki Kaisha (Tokyo JPX 03)
인용정보 피인용 횟수 : 83  인용 특허 : 0

초록

An electroplating apparatus includes a casing having a large opening at the bottom, a substrate being electroplated in the casing, a plating solution injector penetrating through an upper part of the casing for introducing a plating solution into the casing, an exhaust port penetrating through an up

대표청구항

An electroplating method comprising: circulating a plating solution through a closed circulation path including a plating solution storage tank and a pump while not electroplating; after washing the inside of a casing with water, introducing an inert gas into the casing and draining the water from t

이 특허를 인용한 특허 (83)

  1. Woodruff, Daniel J.; Hanson, Kyle M.; Eudy, Steve L.; Weber, Curtis A.; Harris, Randy, Adaptable electrochemical processing chamber.
  2. Chen,Linlin; Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Apparatus and method for electrochemically depositing metal on a semiconductor workpiece.
  3. Chen,Linlin; Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Apparatus and method for electrochemically depositing metal on a semiconductor workpiece.
  4. Ting Chiu H. ; Holtkamp William H. ; Ko Wen C., Apparatus and method utilizing an electrode adapter for customized contact placement on a wafer.
  5. Hanson,Kyle M., Apparatus and methods for electrochemical processing of microelectronic workpieces.
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  7. Hanson,Kyle M.; Ritzdorf,Thomas L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  8. Akram, Salman; Hembree, David R., Apparatus for continuous processing of semiconductor wafers.
  9. Woodruff Daniel J. ; Hanson Kyle M., Apparatus for electrochemically processing a workpiece including an electrical contact assembly having a seal member.
  10. Robert W. Batz, Jr. ; Scot Conrady ; Thomas L. Ritzdorf, Apparatus for high deposition rate solder electroplating on a microelectronic workpiece.
  11. Woodruff, Daniel J.; Hanson, Kyle M.; Oberlitner, Thomas H.; Chen, LinLin; Pedersen, John M.; Zila, Vladimir, Apparatus for processing the surface of a microelectronic workpiece.
  12. Pedersen, John M.; Erickson, James J., Apparatus for providing electrical and fluid communication to a rotating microelectronic workpiece during electrochemical processing.
  13. Pedersen,John M.; Erickson,James J., Apparatus for providing electrical and fluid communication to a rotating microelectronic workpiece during electrochemical processing.
  14. Hanson, Kyle M.; Klocke, John L., Chambers, systems, and methods for electrochemically processing microfeature workpieces.
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  29. Contolini Robert J. ; Reid Jonathan ; Patton Evan ; Feng Jingbin ; Taatjes Steve ; Dukovic John Owen, Electric potential shaping apparatus for holding a semiconductor wafer during electroplating.
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  31. Yezdi Dordi ; Joe Stevens ; Roy Edwards ; Bob Lowrance ; Michael Sugarman ; Mark Denome, Electro-chemical deposition cell for face-up processing of single semiconductor substrates.
  32. Chandrasekhar, Prasanna; Zay, Brian J.; Modes, Sr., Richard; LaRosa, Anthony; Hobin, Kyle, Electrochemical deposition apparatus and methods of using the same.
  33. Chandrasekhar, Prasanna; Zay, Brian J.; Laganis, Edward J.; Romanov, Vasily V.; LaRosa, Anthony J., Electrochromic eyewear.
  34. Reid Jonathan David ; Contolini Robert J. ; Dukovic John Owen, Electroplating anode including membrane partition system and method of preventing passivation of same.
  35. Metzger, Hubert F., Electroplating apparatus.
  36. Toyoda, Yoshihiko; Hayashi, Kiyoshi, Electroplating apparatus.
  37. Woodruff,Daniel J.; Hanson,Kyle M., Electroplating apparatus with segmented anode array.
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  39. Woodruff,Daniel J.; Hanson,Kyle M., Electroplating reactor.
  40. Broadbent Eliot K., Electroplating system with shields for varying thickness profile of deposited layer.
  41. Ting Chiu H. ; Holtkamp William H., Integrated vacuum and plating cluster system.
  42. Ting Chiu H. ; Holtkamp William H. ; Brodowski Richard W. ; Wytman Joseph B., Introducing and reclaiming liquid in a wafer processing chamber.
  43. Akram Salman ; Hembree David R., Method and apparatus for continuous processing of semiconductor wafers.
  44. Akram Salman ; Hembree David R., Method and apparatus for continuous processing of semiconductor wafers.
  45. Akram Salman ; Hembree David R., Method and apparatus for continuous processing of semiconductor wafers.
  46. Ting Chiu H. ; Holtkamp William H., Method and apparatus for the disposal of processing fluid used to deposit and/or remove material on a substrate.
  47. Reid Jonathan David ; Taatjes Steve, Method and apparatus for treating surface including virtual anode.
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  49. Jiang, Tongbi; Li, Li, Method for electroless plating a contact pad.
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  52. Pedersen,John M.; Erickson,James J., Method for providing electrical and fluid communication to a rotating microelectronic workpiece during electrochemical processing.
  53. Patton Evan E. ; Fetters Wayne, Method of depositing metal layer.
  54. Wytman, Joseph, Method of processing a wafer using a compliant wafer chuck.
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  57. Woodruff, Daniel J.; Hanson, Kyle M.; Oberlitner, Thomas H.; Chen, LinLin; Pedersen, John M.; Zila, Vladimir, Methods and apparatus for processing the surface of a microelectronic workpiece.
  58. Woodruff, Daniel J.; Hanson, Kyle M.; Oberlitner, Thomas H.; Chen, LinLin; Pedersen, John M.; Zila, Vladimir, Methods and apparatus for processing the surface of a microelectronic workpiece.
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  66. Woodruff Daniel J. ; Hanson Kyle M., Reactor assembly and method of assembly.
  67. Woodruff Daniel J. ; Hanson Kyle M., Reactor vessel having improved cup anode and conductor assembly.
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  70. Woodruff Daniel J. ; Hanson Kyle M., Reactor vessel having improved cup, anode and conductor assembly.
  71. Woodruff, Daniel J.; Hanson, Kyle M., Reactor vessel having improved cup, anode and conductor assembly.
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  73. Arken David M. ; Chiu Andrew ; Fatula ; Jr. Joseph John ; Hitzfield Robert William ; Hsiao Wen-Chien David ; Hsiao Yiping, Rotary plater with radially distributed plating solution.
  74. Ting Chiu H. ; Holtkamp William H. ; Ko Wen C., Rotating anode for a wafer processing chamber.
  75. Akram Salman ; Hembree David R., Rotating system and method for electrodepositing materials on semiconductor wafers.
  76. Akram Salman ; Hembree David R., Rotating system for electrochemical treatment of semiconductor wafers.
  77. Thie, William; Boyd, John M.; Dordi, Yezdi; Redeker, Fritz C., Simultaneous electroless plating of two substrates.
  78. Wilson, Gregory J.; McHugh, Paul R.; Hanson, Kyle M., System for electrochemically processing a workpiece.
  79. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  80. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  81. Joseph Wytman, Two-piece chuck.
  82. Chandrasekhar, Prasanna, Variable-emittance electrochromic devices and methods of preparing the same.
  83. Wilson,Gregory J.; McHugh,Paul R.; Hanson,Kyle M., Workpiece processor having processing chamber with improved processing fluid flow.
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