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Ultra-fast detectors using doped nanocrystal insulators 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01T-001/20
  • H01L-031/12
출원번호 US-0228821 (1994-08-11)
발명자 / 주소
  • Bhargava Rameshwar N. (5 Morningside Ct. Ossining NY 10562)
인용정보 피인용 횟수 : 68  인용 특허 : 0

초록 ▼

An efficient and ultrafast sensor for X-ray and UV radiation based on doped nanocrystals. These doped nanocrystals consist preferably of impurity-activator doped wide band gap II-VI semiconductors. They yield high efficiency and short recombination time radiation-sensitive phosphors which in respons

대표청구항 ▼

A solid-state sensor comprising: (a) a layer of doped nanocrystals doped with an activator, (b) said doped nanocrystals having an energy band structure due to quantum confinement, (c) said activator having atomic energy levels such that excited carriers can transfer to said atomic energy levels and

이 특허를 인용한 특허 (68)

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