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High-Q inductors in silicon technology without expensive metalization 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/02
  • H01L-023/48
출원번호 US-0307953 (1994-09-16)
발명자 / 주소
  • Ewen John E. (Yorktown Heights NY) Ponnapalli Saila (Fishkill NY) Soyuer Mehmet (Yorktown Heights NY)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 184  인용 특허 : 0

초록

A monolithic high-Q inductor structure is formed with multiple metalization levels in a conventional integrated circuit technology in which inductor turns utilize these multiple levels to reduce the inductor resistance. Inductors with Q values above five can be integrated with this approach at radio

대표청구항

A high Q monolithic inductor structure formed using a conventional silicon technology comprising at least first and second metal levels separated from one another by a first insulating layer, said first and second metal levels being formed with identical spiral patterns and connected through via hol

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